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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
1N5396BULK

1N5396BULK

DIODE GEN PURP 500V 1.5A DO41

EIC SEMICONDUCTOR INC.

20,000 -
1N5396BULK

数据表

- DO-204AL, DO-41, Axial Bag Active Standard 500 V 1.1 V @ 1.5 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 500 V 15pF @ 4V, 1MHz 1.5A - - Through Hole DO-41 -65°C ~ 175°C
1N5394BULK

1N5394BULK

DIODE GEN PURP 300V 1.5A DO41

EIC SEMICONDUCTOR INC.

20,000 -
1N5394BULK

数据表

- DO-204AL, DO-41, Axial Bag Active Standard 300 V 1.1 V @ 1.5 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 300 V 15pF @ 4V, 1MHz 1.5A - - Through Hole DO-41 -65°C ~ 175°C
1N5397BULK

1N5397BULK

DIODE GEN PURP 600V 1.5A DO41

EIC SEMICONDUCTOR INC.

20,000 -
1N5397BULK

数据表

- DO-204AL, DO-41, Axial Bag Active Standard 600 V 1.1 V @ 1.5 A Standard Recovery >500ns, > 200mA (Io) - 5 A @ 600 V 15pF @ 4V, 1MHz 1.5A - - Through Hole DO-41 -65°C ~ 175°C
1N5392BULK

1N5392BULK

DIODE GEN PURP 100V 1.5A DO41

EIC SEMICONDUCTOR INC.

20,000 -
1N5392BULK

数据表

- DO-204AL, DO-41, Axial Bag Active Standard 100 V 1.1 V @ 1.5 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 100 V 15pF @ 4V, 1MHz 1.5A - - Through Hole DO-41 -65°C ~ 175°C
1N4007BULK

1N4007BULK

DIODE GEN PURP 1KV 1A DO41

EIC SEMICONDUCTOR INC.

17,000 -
1N4007BULK

数据表

- DO-204AL, DO-41, Axial Bag Active Standard 1000 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 2 µs 5 µA @ 1000 V 15pF @ 4V, 1MHz 1A - - Through Hole DO-41 -65°C ~ 175°C
1N5405BULK

1N5405BULK

DIODE GEN PURP 500V 3A DO201AD

EIC SEMICONDUCTOR INC.

15,000 -
1N5405BULK

数据表

- DO-201AD, Axial Bag Active Standard 500 V 1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 500 V 28pF @ 4V, 1MHz 3A - - Through Hole DO-201AD -65°C ~ 175°C
1N5401BULK

1N5401BULK

DIODE GEN PURP 100V 3A DO201AD

EIC SEMICONDUCTOR INC.

14,647 -
1N5401BULK

数据表

- DO-201AD, Axial Bag Active Standard 100 V 950 mV @ 3 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 100 V 28pF @ 4V, 1MHz 3A - - Through Hole DO-201AD -65°C ~ 175°C
1N5403BULK

1N5403BULK

DIODE GEN PURP 300V 3A DO201AD

EIC SEMICONDUCTOR INC.

13,500 -
1N5403BULK

数据表

- DO-201AD, Axial Bag Active Standard 300 V 1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 300 V 28pF @ 4V, 1MHz 3A - - Through Hole DO-201AD -65°C ~ 175°C
1N5395BULK

1N5395BULK

DIODE GEN PURP 400V 1.5A DO41

EIC SEMICONDUCTOR INC.

10,000 -
1N5395BULK

数据表

- DO-204AL, DO-41, Axial Bag Active Standard 400 V 1.1 V @ 1.5 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 400 V 15pF @ 4V, 1MHz 1.5A - - Through Hole DO-41 -65°C ~ 175°C
1N5402BULK

1N5402BULK

DIODE GEN PURP 200V 3A DO201AD

EIC SEMICONDUCTOR INC.

6,750 -
1N5402BULK

数据表

- DO-201AD, Axial Bag Active Standard 200 V 950 mV @ 3 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 200 V 28pF @ 4V, 1MHz 3A - - Through Hole DO-201AD -65°C ~ 175°C
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