订单满￥1000免运费
24小时咨询热线
0755 83957878
单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FR306T/RDIODE GEN PURP 800V 3A DO201AD EIC SEMICONDUCTOR INC. |
10,000 | - |
|
数据表 |
- | DO-201AD, Axial | Tape & Reel (TR) | Active | Standard | 800 V | 1.3 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 10 µA @ 800 V | 60pF @ 4V, 1MHz | 3A | - | - | Through Hole | DO-201AD | -65°C ~ 150°C |
|
|
HER301T/RDIODE GEN PURP 50V 3A DO201AD EIC SEMICONDUCTOR INC. |
5,000 | - |
|
数据表 |
- | DO-201AD, Axial | Tape & Reel (TR) | Active | Standard | 50 V | 1.1 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 50 V | 50pF @ 4V, 1MHz | 3A | - | - | Through Hole | DO-201AD | -65°C ~ 150°C |
|
SF28-T/RDIODE GEN PURP 800V 2A DO15 EIC SEMICONDUCTOR INC. |
6,000 | - |
|
数据表 |
- | DO-204AC, DO-15, Axial | Tape & Reel (TR) | Active | Standard | 800 V | 4 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 20 µA @ 800 V | 50pF @ 4V, 1MHz | 2A | - | - | Through Hole | DO-15 | -65°C ~ 150°C |
|
|
SK15DIODE SCHOTTKY 50V 1A SMA EIC SEMICONDUCTOR INC. |
5,000 | - |
|
数据表 |
- | DO-214AC, SMA | Tape & Reel (TR) | Active | Schottky | 50 V | 500 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 50 V | - | 1A | - | - | Surface Mount | DO-214AC (SMA) | -40°C ~ 125°C |
|
|
HER302T/RDIODE GEN PURP 100V 3A DO201AD EIC SEMICONDUCTOR INC. |
5,000 | - |
|
数据表 |
- | DO-201AD, Axial | Tape & Reel (TR) | Active | Standard | 100 V | 1.1 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 100 V | 50pF @ 4V, 1MHz | 3A | - | - | Through Hole | DO-201AD | -65°C ~ 150°C |
|
|
HER303T/RDIODE GEN PURP 200V 3A DO201AD EIC SEMICONDUCTOR INC. |
1,250 | - |
|
数据表 |
- | DO-201AD, Axial | Tape & Reel (TR) | Active | Standard | 200 V | 1.1 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 200 V | 50pF @ 4V, 1MHz | 3A | - | - | Through Hole | DO-201AD | -65°C ~ 150°C |
|
|
1N4933BULKDIODE GEN PURP 50V 1A DO41 EIC SEMICONDUCTOR INC. |
98,000 | - |
|
数据表 |
- | DO-204AL, DO-41, Axial | Bag | Active | Standard | 50 V | 1.2 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 50 V | 15pF @ 4V, 1MHz | 1A | - | - | Through Hole | DO-41 | -65°C ~ 150°C |
|
|
1N4934BULKDIODE GEN PURP 100V 1A DO41 EIC SEMICONDUCTOR INC. |
90,000 | - |
|
数据表 |
- | DO-204AL, DO-41, Axial | Bag | Active | Standard | 100 V | 1.2 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 100 V | 15pF @ 4V, 1MHz | 1A | - | - | Through Hole | DO-41 | -65°C ~ 150°C |
|
|
1N5393DIODE GEN PURP 200V 1.5A DO41 EIC SEMICONDUCTOR INC. |
60,000 | - |
|
数据表 |
- | DO-204AL, DO-41, Axial | Bag | Active | Standard | 200 V | 1.1 V @ 1.5 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 200 V | 15pF @ 4V, 1MHz | 1.5A | - | - | Through Hole | DO-41 | -65°C ~ 175°C |
|
|
1N4935BULKDIODE GEN PURP 200V 1A DO41 EIC SEMICONDUCTOR INC. |
51,000 | - |
|
数据表 |
- | DO-204AL, DO-41, Axial | Bag | Active | Standard | 200 V | 1.2 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 200 V | 15pF @ 4V, 1MHz | 1A | - | - | Through Hole | DO-41 | -65°C ~ 150°C |
