| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流(Io) | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
UF600DDIODE GEN PURP 200V 6A P600 Diotec Semiconductor |
786 | - |
|
数据表 |
- | P600, Axial | Cut Tape (CT) | Active | Standard | 200 V | 1 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 10 µA @ 200 V | - | 6A | - | - | Through Hole | P600 | -50°C ~ 175°C |
|
BY880-100DIODE GEN PURP 100V 8A AXIAL Diotec Semiconductor |
894 | - |
|
数据表 |
- | Axial | Cut Tape (CT) | Active | Standard | 100 V | 1.1 V @ 8 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 100 V | - | 8A | - | - | Through Hole | Axial | -50°C ~ 175°C |
|
ES3JDIODE GEN PURP 600V 3A SMC Diotec Semiconductor |
684 | - |
|
数据表 |
- | DO-214AB, SMC | Tape & Reel (TR) | Active | Standard | 600 V | 1.5 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 600 V | - | 3A | - | - | Surface Mount | DO-214AB (SMC) | -50°C ~ 150°C |
|
SB830DIODE SCHOTTKY 30V 8A AXIAL Diotec Semiconductor |
938 | - |
|
数据表 |
- | Axial | Cut Tape (CT) | Active | Schottky | 30 V | 550 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 30 V | - | 8A | - | - | Through Hole | Axial | -50°C ~ 150°C |
|
SB820DIODE SCHOTTKY 20V 8A AXIAL Diotec Semiconductor |
520 | - |
|
数据表 |
- | Axial | Cut Tape (CT) | Active | Schottky | 20 V | 550 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 20 V | - | 8A | - | - | Through Hole | Axial | -50°C ~ 150°C |
|
UF600MDIODE GEN PURP 1000V 6A P600 Diotec Semiconductor |
1,154 | - |
|
数据表 |
- | P600, Axial | Cut Tape (CT) | Active | Standard | 1000 V | 1.7 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 10 µA @ 1000 V | - | 6A | - | - | Through Hole | P600 | -50°C ~ 175°C |
|
P1200ADIODE GEN PURP 50V 12A P600 Diotec Semiconductor |
1,000 | - |
|
数据表 |
- | P600, Axial | Cut Tape (CT) | Active | Standard | 50 V | 950 mV @ 12 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | - | 12A | - | - | Through Hole | P-600 | -50°C ~ 150°C |
|
UF600ADIODE GEN PURP 50V 6A P600 Diotec Semiconductor |
1,000 | - |
|
数据表 |
- | P600, Axial | Cut Tape (CT) | Active | Standard | 50 V | 1 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 10 µA @ 50 V | - | 6A | - | - | Through Hole | P-600 | -50°C ~ 175°C |
|
UF600GDIODE GEN PURP 400V 6A P600 Diotec Semiconductor |
975 | - |
|
数据表 |
- | P600, Axial | Bulk | Active | Standard | 400 V | 1.25 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 10 µA @ 400 V | - | 6A | - | - | Through Hole | P-600 | -50°C ~ 175°C |
|
UF600KDIODE GEN PURP 800V 6A P600 Diotec Semiconductor |
960 | - |
|
数据表 |
- | P600, Axial | Cut Tape (CT) | Active | Standard | 800 V | 1.7 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 10 µA @ 800 V | - | 6A | - | - | Through Hole | P-600 | -50°C ~ 175°C |