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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
BY550-400

BY550-400

DIODE GEN PURP 400V 5A DO201

Diotec Semiconductor

384 -
BY550-400

数据表

- DO-201AA, DO-27, Axial Cut Tape (CT) Active Standard 400 V 1 V @ 5 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 5 µA @ 400 V - 5A - - Through Hole DO-201 -50°C ~ 175°C
BY550-1000

BY550-1000

DIODE GEN PURP 1000V 5A DO201

Diotec Semiconductor

266 -
BY550-1000

数据表

- DO-201AA, DO-27, Axial Cut Tape (CT) Active Standard 1000 V 1 V @ 5 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 5 µA @ 1000 V - 5A - - Through Hole DO-201 -50°C ~ 175°C
P600J

P600J

DIODE GEN PURP 600V 6A P600

Diotec Semiconductor

1,228 -
P600J

数据表

- P600, Axial Cut Tape (CT) Active Standard 600 V 1.1 V @ 6 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 10 µA @ 600 V - 6A - - Through Hole P600 -50°C ~ 175°C
P600B

P600B

DIODE GEN PURP 100V 6A P600

Diotec Semiconductor

536 -
P600B

数据表

- P600, Axial Cut Tape (CT) Active Standard 100 V 1.1 V @ 6 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 10 µA @ 100 V - 6A - - Through Hole P600 -50°C ~ 175°C
BY550-100

BY550-100

DIODE GEN PURP 100V 5A AXIAL

Diotec Semiconductor

900 -
BY550-100

数据表

- Axial Cut Tape (CT) Active Standard 100 V 1 V @ 5 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 5 µA @ 100 V - 5A - - Through Hole Axial -50°C ~ 175°C
UF5408

UF5408

DIODE GEN PURP 1000V 3A DO201

Diotec Semiconductor

795 -
UF5408

数据表

- DO-201AA, DO-27, Axial Cut Tape (CT) Active Standard 1000 V 1.7 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 5 µA @ 1000 V - 3A - - Through Hole DO-201 -50°C ~ 175°C
P600G

P600G

DIODE GEN PURP 400V 6A P600

Diotec Semiconductor

1,416 -
P600G

数据表

- P600, Axial Cut Tape (CT) Active Standard 400 V 1.1 V @ 6 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 10 µA @ 400 V - 6A - - Through Hole P600 -50°C ~ 150°C
SB340

SB340

DIODE SCHOTTKY 40V 3A DO201

Diotec Semiconductor

917 -
SB340

数据表

- DO-201AA, DO-27, Axial Cut Tape (CT) Active Schottky 40 V 490 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 40 V - 3A - - Through Hole DO-201 -50°C ~ 150°C
P600K

P600K

DIODE GEN PURP 800V 6A P600

Diotec Semiconductor

718 -
P600K

数据表

- P600, Axial Cut Tape (CT) Active Standard 800 V 1.1 V @ 6 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 10 µA @ 800 V - 6A - - Through Hole P600 -50°C ~ 150°C
MBR360

MBR360

DIODE SCHOTTKY 60V 3A DO201

Diotec Semiconductor

880 -
MBR360

数据表

- DO-201AA, DO-27, Axial Cut Tape (CT) Active Schottky 60 V 740 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 60 V - 3A - - Through Hole DO-201 -50°C ~ 150°C
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