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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
BYW83TAP

BYW83TAP

DIODE AVALANCHE 400V 3A SOD64

Vishay General Semiconductor - Diodes Division

11,750 -
BYW83TAP

数据表

- SOD-64, Axial Cut Tape (CT) Active Avalanche 400 V 1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 7.5 µs 1 µA @ 400 V 60pF @ 4V, 1MHz 3A - - Through Hole SOD-64 -55°C ~ 175°C
V20PL63HM3/I

V20PL63HM3/I

20A, 60V, SMPC TRENCH SKY RECT.

Vishay General Semiconductor - Diodes Division

6,290 -
V20PL63HM3/I

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 60 V 640 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 600 µA @ 60 V 3400pF @ 4V, 1MHz 20A Automotive AEC-Q101 Surface Mount TO-277A (SMPC) -40°C ~ 150°C
SFS1008G

SFS1008G

DIODE GEN PURP 600V 10A TO263AB

Taiwan Semiconductor Corporation

1,597 -
SFS1008G

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 1.7 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 1 µA @ 600 V 50pF @ 4V, 1MHz 10A - - Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
SF808G

SF808G

DIODE GEN PURP 600V 8A TO220AB

Taiwan Semiconductor Corporation

1,000 -
SF808G

数据表

- TO-220-3 Tube Active Standard 600 V 1.7 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 600 V 50pF @ 4V, 1MHz 8A - - Through Hole TO-220AB -55°C ~ 150°C
MUR840H

MUR840H

50NS, 8A, 400V, HIGH EFFICIENT R

Taiwan Semiconductor Corporation

1,000 -
MUR840H

数据表

- TO-220-2 Tube Active Standard 400 V 1.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 400 V - 8A Automotive AEC-Q101 Through Hole TO-220AC -55°C ~ 175°C
C3D02065E-TR

C3D02065E-TR

DIODE SIC 650V 8A TO252-2

Wolfspeed, Inc.

405 -
C3D02065E-TR

数据表

Z-Rec® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 1.8 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 650 V 120pF @ 0V, 1MHz 8A - - Surface Mount TO-252-2 -55°C ~ 175°C
TRS3E65H,S1Q

TRS3E65H,S1Q

G3 SIC-SBD 650V 3A TO-220-2L

Toshiba Semiconductor and Storage

388 -
TRS3E65H,S1Q

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 1.35 V @ 3 A No Recovery Time > 500mA (Io) 0 ns 45 µA @ 650 V 199pF @ 1V, 1MHz 3A - - Through Hole TO-220-2L 175°C
MBR10100F_T0_00001

MBR10100F_T0_00001

10 AMPERES SCHOTTKY BARRIER RECT

Panjit International Inc.

2,154 -
MBR10100F_T0_00001

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Active Schottky 100 V 800 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 100 V - 10A - - Through Hole ITO-220AC -65°C ~ 175°C
VS-15ETL06HN3

VS-15ETL06HN3

DIODE GEN PURP 600V 15A TO220AC

Vishay General Semiconductor - Diodes Division

1,000 -
VS-15ETL06HN3

数据表

FRED Pt® TO-220-2 Tube Active Standard 600 V 1.05 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 220 ns 10 µA @ 600 V - 15A Automotive AEC-Q101 Through Hole TO-220AC -65°C ~ 175°C
VS-8ETU04HN3

VS-8ETU04HN3

DIODE GEN PURP 400V 8A TO220AC

Vishay General Semiconductor - Diodes Division

1,000 -
VS-8ETU04HN3

数据表

FRED Pt® TO-220-2 Tube Active Standard 400 V 1.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 43 ns 10 µA @ 400 V - 8A Automotive AEC-Q101 Through Hole TO-220AC -55°C ~ 175°C
MUR860H

MUR860H

DIODE GEN PURP 600V 8A TO220AC

Taiwan Semiconductor Corporation

979 -
MUR860H

数据表

- TO-220-2 Tube Active Standard 600 V 1.7 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 600 V - 8A Automotive AEC-Q101 Through Hole TO-220AC -55°C ~ 175°C
RB075BM40SFHHTL

RB075BM40SFHHTL

40V, 5A, TO-252, SUPER LOW IR SB

Rohm Semiconductor

2,500 -
RB075BM40SFHHTL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Schottky 40 V 750 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 5 µA @ 40 V - 5A Automotive AEC-Q101 Surface Mount TO-252 175°C
FT2000AD

FT2000AD

DIODE GEN PURP 200V 20A TO220AC

Diotec Semiconductor

1,000 -
FT2000AD

数据表

- TO-220-2 Bulk Active Standard 200 V 960 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 5 µA @ 200 V - 20A - - Through Hole TO-220AC -50°C ~ 150°C
RFN6RSM2STL1

RFN6RSM2STL1

200V 6A 14NS, TO-277A, ULTRA FAS

Rohm Semiconductor

4,000 -
RFN6RSM2STL1

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Standard 200 V 930 mV @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 200 V - 6A - - Surface Mount TO-277A 175°C
YQ5RSM10SDTFTL1

YQ5RSM10SDTFTL1

TRENCH MOS STRUCTURE, 100V, 5A

Rohm Semiconductor

3,990 -
YQ5RSM10SDTFTL1

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 100 V 770 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 25 µA @ 100 V - 5A Automotive AEC-Q101 Surface Mount TO-277A 175°C
MA10EA06-TE12L

MA10EA06-TE12L

SCHOTTKY BARRIER DIODE, 1A, 60V,

KYOCERA AVX

2,775 -
MA10EA06-TE12L

数据表

- DO-221BC, SMA Flat Leads Exposed Pad Tape & Reel (TR) Active Schottky 60 V 560 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 600 µA @ 60 V - 10A - - Surface Mount DO-221BC (MA) -55°C ~ 150°C
SS54BF-HF

SS54BF-HF

DIODE SCHOTTKY 40V 5A SMBF

Comchip Technology

5,851 -
SS54BF-HF

数据表

- DO-221AA, SMB Flat Leads Tape & Reel (TR) Active Schottky 40 V 550 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 40 V 800pF @ 4V, 1MHz 5A - - Surface Mount SMBF -55°C ~ 150°C
MBR8170TFSTXG

MBR8170TFSTXG

DIODE SCHOTTKY 170V 8A 8WDFN

onsemi

4,640 -
MBR8170TFSTXG

数据表

- 8-PowerWDFN Tape & Reel (TR) Active Schottky 170 V 890 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 30 µA @ 170 V 237pF @ 1V, 1MHz 8A - - Surface Mount 8-WDFN (3.3x3.3) -55°C ~ 175°C
UGF12JH

UGF12JH

DIODE GEN PURP 600V 12A ITO220AC

Taiwan Semiconductor Corporation

1,000 -
UGF12JH

数据表

- TO-220-2 Full Pack Tube Active Standard 600 V 2 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 20 ns 5 µA @ 600 V - 12A Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
UG12J

UG12J

DIODE GEN PURP 600V 12A TO220AC

Taiwan Semiconductor Corporation

990 -
UG12J

数据表

- TO-220-2 Tube Active Standard 600 V 2 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 20 ns 5 µA @ 600 V - 12A - - Through Hole TO-220AC -55°C ~ 150°C
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