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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANTXV1N6628UDIODE GEN PURP 600V 1.75A D-5B Microsemi Corporation |
3,955 | - |
|
数据表 |
- | SQ-MELF, E | Bulk | Active | Standard | 600 V | 1.35 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 2 µA @ 600 V | - | 1.75A | Military | MIL-PRF-19500/590 | Surface Mount | D-5B | -65°C ~ 150°C |
|
UPS5819E3/TR7DIODE SCHOTTKY 40V 1A POWERMITE1 Microsemi Corporation |
28,124 | - |
|
数据表 |
- | DO-216AA | Tape & Reel (TR) | Active | Schottky | 40 V | 550 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 40 V | 60pF @ 5V, 1MHz | 1A | - | - | Surface Mount | Powermite 1 (DO216-AA) | -55°C ~ 150°C |
|
|
JANHCA1N6391SCHOTTKY RECTIFIER Microsemi Corporation |
4,486 | - |
|
数据表 |
- | DO-203AA, DO-4, Stud | Bulk | Active | Schottky | 45 V | 680 mV @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5 mA @ 45 V | 2000pF @ 5V, 1MHz | 22.5A | Military | MIL-PRF-19500/553 | Stud Mount | DO-203AA (DO-4) | -55°C ~ 175°C |
|
|
JANHCA1N6392SCHOTTKY RECTIFIER Microsemi Corporation |
3,575 | - |
|
数据表 |
- | DO-203AB, DO-5, Stud | Bulk | Active | Schottky | 45 V | 820 mV @ 120 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2 mA @ 45 V | 3000pF @ 5V, 1MHz | 54A | Military | MIL-PRF-19500/554 | Stud Mount | DO-5 (DO-203AB) | -55°C ~ 175°C |
|
|
S2160E3DIODE SWITCHING 600V 22A 2-PIN D Microsemi Corporation |
6,933 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
MSC750SMA120SMOSFET N-CH 1200V D3PAK Microsemi Corporation |
9,384 | - |
|
数据表 |
* | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
APT10SCE120BDIODE SIL CARB 1.2KV 43A TO247 Microsemi Corporation |
7,604 | - |
|
数据表 |
- | TO-247-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 630pF @ 1V, 1MHz | 43A | - | - | Through Hole | TO-247 | -55°C ~ 175°C |
|
|
APT10SCE170BDIODE SIL CARB 1.7KV 23A TO247 Microsemi Corporation |
7,868 | - |
|
数据表 |
- | TO-247-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1700 V | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1700 V | 1120pF @ 0V, 1MHz | 23A | - | - | Through Hole | TO-247 | -55°C ~ 175°C |
|
|
APT10SCE65BDIODE SCHOTTKY 650V 10A TO247 Microsemi Corporation |
6,529 | - |
|
数据表 |
* | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
APT10SCE65KDIODE SCHOTTKY 650V 10A TO220 Microsemi Corporation |
7,040 | - |
|
数据表 |
* | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
