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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
1N4534UR

1N4534UR

DIODE SWITCHING

Microsemi Corporation

5,892 -
1N4534UR

数据表

- DO-204AG, DO-34, Axial Bulk Active Standard 50 V 880 mV @ 20 mA Small Signal =< 200mA (Io), Any Speed 4 ns 50 nA @ 50 V - 150mA - - Through Hole DO-34 -65°C ~ 175°C
UPDS3200

UPDS3200

DIODE SCHOTTKY 200V 3A POWERDI5

Microsemi Corporation

4,434 -
UPDS3200

数据表

- PowerDI™ 5 Cut Tape (CT) Obsolete Schottky 200 V 780 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 10 µA @ 200 V - 3A - - Surface Mount - -
LSM545JE3

LSM545JE3

DIODE SCHOTTKY 45V 5A DO214AB

Microsemi Corporation

8,404 -
LSM545JE3

数据表

- DO-214AB, SMC Tape & Reel (TR) Discontinued at Digi-Key Schottky 45 V 520 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 2 mA @ 45 V - 5A - - Surface Mount DO-214AB -55°C ~ 150°C
APT60D30BG

APT60D30BG

DIODE GEN PURP 300V 60A TO247

Microsemi Corporation

3,491 -
APT60D30BG

数据表

- TO-247-2 Tube Obsolete Standard 300 V 1.4 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 38 ns 250 µA @ 300 V - 60A - - Through Hole TO-247 -55°C ~ 175°C
APT10SCD120K

APT10SCD120K

DIODE SIL CARB 1.2KV 10A TO220

Microsemi Corporation

297 -
APT10SCD120K

数据表

- TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 1.5 V @ 10 A No Recovery Time > 500mA (Io) 0 ns - - 10A - - Through Hole TO-220-2 -
LSM845JE3

LSM845JE3

DIODE SCHOTTKY 45V 8A DO214AB

Microsemi Corporation

3,953 -
LSM845JE3

数据表

- DO-214AB, SMC Tape & Reel (TR) Discontinued at Digi-Key Schottky 45 V 520 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 2 mA @ 45 V - 8A - - Surface Mount DO-214AB -55°C ~ 150°C
1N3064

1N3064

DIODE GEN PURP 50V 75MA DO35

Microsemi Corporation

5,894 -
1N3064

数据表

- DO-204AA, DO-7, Axial Bulk Obsolete Standard 50 V 1 V @ 75 mA Small Signal =< 200mA (Io), Any Speed 4 ns 100 nA @ 50 V - 75mA - - Through Hole DO-35 -65°C ~ 125°C
1N5811/TR

1N5811/TR

DIODE GEN PURP 150V 6A AXIAL

Microsemi Corporation

7,319 -
1N5811/TR

数据表

- B, Axial Tape & Reel (TR) Active Standard 150 V 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V - 6A - - Through Hole B, Axial -65°C ~ 175°C
JANTXV1N6638U

JANTXV1N6638U

SWITCHING DIODE

Microsemi Corporation

4,129 -
JANTXV1N6638U

数据表

- SQ-MELF, E Bulk Active Standard 125 V 1.1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 4.5 ns 500 nA @ 150 V 2.5pF @ 0V, 1MHz 300mA Military MIL-PRF-19500/578 Surface Mount D-5B -65°C ~ 175°C
1N5811AUS

1N5811AUS

RECTIFIER DIODE

Microsemi Corporation

3,469 -
1N5811AUS

数据表

- - Bulk Active - - - - - - - - - - - - -
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