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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
1N5394

1N5394

DIODE GEN PURP 300V 1.5A DO15

Fairchild Semiconductor

68,000 -
1N5394

数据表

- DO-204AC, DO-15, Axial Bulk Obsolete Standard 300 V 1.4 V @ 1.5 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 300 V 25pF @ 4V, 1MHz 1.5A - - Through Hole DO-15 -55°C ~ 150°C
1N5399

1N5399

DIODE GEN PURP 1V 1.5A DO15

Fairchild Semiconductor

37,788 -
1N5399

数据表

- DO-204AC, DO-15, Axial Bulk Obsolete Standard 1000 V 1.4 V @ 1.5 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1000 V 25pF @ 4V, 1MHz 1.5A - - Through Hole DO-15 -55°C ~ 150°C
S1M

S1M

DIODE GP 1KV 1A DO214AC SMA

Fairchild Semiconductor

89,000 -
S1M

数据表

- DO-214AC, SMA Bulk Active Standard 1000 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 5 µA @ 1 V - 1A - - Surface Mount DO-214AC (SMA) -50°C ~ 150°C
1N4446

1N4446

DIODE GEN PURP 100V 200MA DO35

Fairchild Semiconductor

83,372 -
1N4446

数据表

- DO-204AH, DO-35, Axial Bulk Obsolete Standard 100 V 1 V @ 20 mA Small Signal =< 200mA (Io), Any Speed 4 ns 25 nA @ 20 V 4pF @ 0V, 1MHz 200mA - - Through Hole DO-204AH (DO-35) 175°C (Max)
MMSD485B

MMSD485B

DIODE GEN PURP 100V 0.2A SOD123

Fairchild Semiconductor

45,000 -
MMSD485B

数据表

- SOD-123 Bulk Active Standard - - Standard Recovery >500ns, > 200mA (Io) - - - - - - Surface Mount SOD-123 150°C (Max)
D3D7-FDH6308C

D3D7-FDH6308C

SMALL SIGNAL DIODE

Fairchild Semiconductor

30,000 -
D3D7-FDH6308C

数据表

* - Bulk Active - - - - - - - - - - - - -
BAS16-D87Z

BAS16-D87Z

BAS16 - SWITCHING DIODE, 85 V 20

Fairchild Semiconductor

216,610 -
BAS16-D87Z

数据表

- TO-236-3, SC-59, SOT-23-3 Bulk Active Standard 85 V 1.25 V @ 150 mA Small Signal =< 200mA (Io), Any Speed 6 ns 1 µA @ 75 V 2pF @ 0V, 1MHz 200mA - - Surface Mount SOT-23-3 -55°C ~ 150°C
EGP10J

EGP10J

DIODE GEN PURP 600V 1A DO204AL

Fairchild Semiconductor

169,007 -
EGP10J

数据表

- DO-204AL, DO-41, Axial Bulk Active Standard 600 V 1.7 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 5 µA @ 600 V - 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 150°C
EGP10A

EGP10A

DIODE GEN PURP 50V 1A DO204AL

Fairchild Semiconductor

124,990 -
EGP10A

数据表

- DO-204AL, DO-41, Axial Bulk Active Standard 50 V 950 mV @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 50 V 22pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 150°C
RGP10B

RGP10B

DIODE GEN PURP 100V 1A DO204AL

Fairchild Semiconductor

15,475 -
RGP10B

数据表

- DO-204AL, DO-41, Axial Bulk Active Standard 100 V 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 5 µA @ 100 V 15pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
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