Taiwan Semiconductor Corporation|单个二极管 - 页 318

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
SF3004PT DIODE GEN PURP 200V 30A TO247AD Taiwan Semiconductor Corporation	7,323	-	询价单	数据表	-	TO-247-3	Tube	Active	Standard	200 V	950 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	175pF @ 4V, 1MHz	30A	-	-	Through Hole	TO-247AD (TO-3P)	-55°C ~ 150°C
SR520HB0G DIODE SCHOTTKY 200V 5A DO201AD Taiwan Semiconductor Corporation	8,933	-	询价单	数据表	-	DO-201AD, Axial	Bulk	Active	Schottky	200 V	1.05 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 200 V	-	5A	Automotive	AEC-Q101	Through Hole	DO-201AD	-55°C ~ 150°C
SR804 B0G DIODE SCHOTTKY 40V 8A DO201AD Taiwan Semiconductor Corporation	7,423	-	询价单	数据表	-	DO-201AD, Axial	Bulk	Discontinued at Digi-Key	Schottky	40 V	550 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 40 V	-	8A	-	-	Through Hole	DO-201AD	-55°C ~ 125°C
UF1D B0G DIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation	8,319	-	询价单	数据表	-	DO-204AL, DO-41, Axial	Bulk	Active	Standard	200 V	1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 200 V	17pF @ 4V, 1MHz	1A	-	-	Through Hole	DO-204AL (DO-41)	-55°C ~ 150°C
UF1J B0G DIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation	9,327	-	询价单	数据表	-	DO-204AL, DO-41, Axial	Bulk	Active	Standard	600 V	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	5 µA @ 600 V	17pF @ 4V, 1MHz	1A	-	-	Through Hole	DO-204AL (DO-41)	-55°C ~ 150°C
UF4005 B0G DIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation	3,676	-	询价单	数据表	-	DO-204AL, DO-41, Axial	Bulk	Active	Standard	600 V	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	5 µA @ 600 V	17pF @ 4V, 1MHz	1A	-	-	Through Hole	DO-204AL (DO-41)	-55°C ~ 150°C
UF4007 B0G DIODE GEN PURP 1A DO204AL Taiwan Semiconductor Corporation	4,400	-	询价单	数据表	-	DO-204AL, DO-41, Axial	Bulk	Active	Standard	1000 V	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	5 µA @ 1000 V	17pF @ 4V, 1MHz	1A	-	-	Through Hole	DO-204AL (DO-41)	-55°C ~ 150°C
UG2D B0G DIODE GEN PURP 200V 2A DO204AC Taiwan Semiconductor Corporation	8,971	-	询价单	数据表	-	DO-204AC, DO-15, Axial	Bulk	Active	Standard	200 V	950 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	5 µA @ 200 V	35pF @ 4V, 1MHz	2A	-	-	Through Hole	DO-204AC (DO-15)	-55°C ~ 150°C
UG54GHB0G DIODE GEN PURP 200V 5A DO201AD Taiwan Semiconductor Corporation	5,659	-	询价单	数据表	-	DO-201AD, Axial	Bulk	Active	Standard	200 V	1.05 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	10 µA @ 200 V	-	5A	Automotive	AEC-Q101	Through Hole	DO-201AD	-55°C ~ 175°C
ARS5045 B0G DIODE GEN PURP 45V 50A ARS Taiwan Semiconductor Corporation	7,379	-	询价单	数据表	-	ARS	Bulk	Active	Standard	45 V	550 mV @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	500 µA @ 45 V	2700pF @ 4V, 1MHz	50A	-	-	Surface Mount	ARS	-55°C ~ 175°C

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