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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
TSOD1F6HM RVG

TSOD1F6HM RVG

DIODE GEN PURP 600V 1A SOD123FL

Taiwan Semiconductor Corporation

4,992 -
TSOD1F6HM RVG

数据表

- SOD-123F Tape & Reel (TR) Active Standard 600 V 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 5 µA @ 600 V 4pF @ 4V, 1MHz 1A - - Surface Mount SOD-123FL -55°C ~ 150°C
TSOD1F8HM RVG

TSOD1F8HM RVG

DIODE GEN PURP 800V 1A SOD123FL

Taiwan Semiconductor Corporation

6,890 -
TSOD1F8HM RVG

数据表

- SOD-123F Tape & Reel (TR) Active Standard 800 V 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 5 µA @ 800 V 4pF @ 4V, 1MHz 1A - - Surface Mount SOD-123FL -55°C ~ 150°C
1N4007GHA0G

1N4007GHA0G

DIODE GEN PURP 1KV 1A DO204AL

Taiwan Semiconductor Corporation

9,475 -
1N4007GHA0G

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Active Standard 1000 V 1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1000 V 10pF @ 4V, 1MHz 1A Automotive AEC-Q101 Through Hole DO-204AL (DO-41) -55°C ~ 150°C
BA157G A0G

BA157G A0G

DIODE GEN PURP 400V 1A DO204AL

Taiwan Semiconductor Corporation

8,706 -
BA157G A0G

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Active Standard 400 V 1.2 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 5 µA @ 400 V 15pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -55°C ~ 150°C
BAV19 A0G

BAV19 A0G

DIODE GEN PURP 100V 200MA DO35

Taiwan Semiconductor Corporation

5,106 -
BAV19 A0G

数据表

- DO-204AH, DO-35, Axial Tape & Box (TB) Active Standard 100 V 1.25 V @ 200 mA Small Signal =< 200mA (Io), Any Speed - 100 nA @ 100 V 5pF @ 0V, 1MHz 200mA - - Through Hole DO-35 -55°C ~ 175°C
BAV21 A0G

BAV21 A0G

DIODE GEN PURP 250V 200MA DO35

Taiwan Semiconductor Corporation

5,411 -
BAV21 A0G

数据表

- DO-204AH, DO-35, Axial Tape & Box (TB) Active Standard 250 V 1.25 V @ 200 mA Small Signal =< 200mA (Io), Any Speed - 100 nA @ 250 V 5pF @ 0V, 1MHz 200mA - - Through Hole DO-35 -55°C ~ 175°C
HER105G A0G

HER105G A0G

DIODE GEN PURP 400V 1A DO204AL

Taiwan Semiconductor Corporation

9,736 -
HER105G A0G

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Active Standard 400 V 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 400 V 15pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -55°C ~ 150°C
MUR160AHA0G

MUR160AHA0G

DIODE GEN PURP 600V 1A DO204AL

Taiwan Semiconductor Corporation

6,450 -
MUR160AHA0G

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Active Standard 600 V 1.25 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 600 V 27pF @ 4V, 1MHz 1A Automotive AEC-Q101 Through Hole DO-204AL (DO-41) -55°C ~ 175°C
MUR190AHA0G

MUR190AHA0G

DIODE GEN PURP 900V 1A DO204AL

Taiwan Semiconductor Corporation

9,040 -
MUR190AHA0G

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 900 V 1.7 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 5 µA @ 900 V 15pF @ 4V, 1MHz 1A Automotive AEC-Q101 Through Hole DO-204AL (DO-41) -55°C ~ 175°C
SR010 A0G

SR010 A0G

DIODE SCHOTT 100V 500MA DO204AL

Taiwan Semiconductor Corporation

7,851 -
SR010 A0G

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Active Schottky 100 V 850 mV @ 500 mA Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 100 V 65pF @ 4V, 1MHz 500mA - - Through Hole DO-204AL (DO-41) -55°C ~ 150°C
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