Taiwan Semiconductor Corporation|单个二极管 - 页 168

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
TSN520M60 S4G DIODE GEN PURP 60V 20A 8DFN Taiwan Semiconductor Corporation	3,355	-	询价单	数据表	-	8-PowerLDFN	Tape & Reel (TR)	Obsolete	Standard	60 V	580 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 60 V	-	20A	-	-	Surface Mount	8-PDFN (5x6)	-55°C ~ 150°C
PUUP3J 25NS, 3A, 600V, ULTRA FAST RECOV Taiwan Semiconductor Corporation	10	-	询价单	数据表	-	TO-277, 3-PowerDFN	Tape & Reel (TR)	Active	Standard	600 V	1.7 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	26 ns	2 µA @ 600 V	31pF @ 4V, 1MHz	3A	-	-	Surface Mount	TO-277A (SMPC)	-55°C ~ 150°C
SFS1006GH DIODE GEN PURP 400V 10A TO263AB Taiwan Semiconductor Corporation	1,550	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	400 V	1.3 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 400 V	50pF @ 4V, 1MHz	10A	Automotive	AEC-Q101	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 150°C
SFAF2008GH DIODE GEN PURP 600V 20A ITO220AC Taiwan Semiconductor Corporation	1,000	-	询价单	数据表	-	TO-220-2 Full Pack	Tube	Active	Standard	600 V	1.7 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 600 V	150pF @ 4V, 1MHz	20A	Automotive	AEC-Q101	Through Hole	ITO-220AC	-55°C ~ 150°C
MUR820H 25NS, 8A, 200V, ULTRA FAST RECOV Taiwan Semiconductor Corporation	1,000	-	询价单	数据表	-	TO-220-2	Tube	Active	Standard	200 V	975 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	5 µA @ 200 V	-	8A	Automotive	AEC-Q101	Through Hole	TO-220AC	-55°C ~ 175°C
SF1604G DIODE GEN PURP 200V 16A TO220AB Taiwan Semiconductor Corporation	991	-	询价单	数据表	-	TO-220-3	Tube	Active	Standard	200 V	975 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	80pF @ 4V, 1MHz	16A	-	-	Through Hole	TO-220AB	-55°C ~ 150°C
SFS1008G DIODE GEN PURP 600V 10A TO263AB Taiwan Semiconductor Corporation	1,597	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	600 V	1.7 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 600 V	50pF @ 4V, 1MHz	10A	-	-	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 150°C
SF808G DIODE GEN PURP 600V 8A TO220AB Taiwan Semiconductor Corporation	1,000	-	询价单	数据表	-	TO-220-3	Tube	Active	Standard	600 V	1.7 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 600 V	50pF @ 4V, 1MHz	8A	-	-	Through Hole	TO-220AB	-55°C ~ 150°C
MUR840H 50NS, 8A, 400V, HIGH EFFICIENT R Taiwan Semiconductor Corporation	1,000	-	询价单	数据表	-	TO-220-2	Tube	Active	Standard	400 V	1.3 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 400 V	-	8A	Automotive	AEC-Q101	Through Hole	TO-220AC	-55°C ~ 175°C
MUR860H DIODE GEN PURP 600V 8A TO220AC Taiwan Semiconductor Corporation	979	-	询价单	数据表	-	TO-220-2	Tube	Active	Standard	600 V	1.7 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 600 V	-	8A	Automotive	AEC-Q101	Through Hole	TO-220AC	-55°C ~ 175°C

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