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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
HERAF805GDIODE GEN PURP 400V 8A ITO220AC Taiwan Semiconductor Corporation |
1,000 | - |
|
数据表 |
- | TO-220-2 Full Pack | Tube | Active | Standard | 400 V | 1.3 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 400 V | 80pF @ 4V, 1MHz | 8A | - | - | Through Hole | ITO-220AC | -55°C ~ 150°C |
|
|
HERAF806GDIODE GEN PURP 600V 8A ITO220AC Taiwan Semiconductor Corporation |
1,000 | - |
|
数据表 |
- | TO-220-2 Full Pack | Tube | Active | Standard | 600 V | 1.7 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 80 ns | 10 µA @ 600 V | 60pF @ 4V, 1MHz | 8A | - | - | Through Hole | ITO-220AC | -55°C ~ 150°C |
|
|
HERAF804GDIODE GEN PURP 300V 8A ITO220AC Taiwan Semiconductor Corporation |
1,000 | - |
|
数据表 |
- | TO-220-2 Full Pack | Tube | Active | Standard | 300 V | 1 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 300 V | 80pF @ 4V, 1MHz | 8A | - | - | Through Hole | ITO-220AC | -55°C ~ 150°C |
|
|
HERAF1006GDIODE GEN PURP 600V 10A ITO220AC Taiwan Semiconductor Corporation |
1,000 | - |
|
数据表 |
- | TO-220-2 Full Pack | Tube | Active | Standard | 600 V | 1.7 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 80 ns | 10 µA @ 600 V | 60pF @ 4V, 1MHz | 10A | - | - | Through Hole | ITO-220AC | -55°C ~ 150°C |
|
|
HERAF1005GDIODE GEN PURP 400V 10A ITO220AC Taiwan Semiconductor Corporation |
1,000 | - |
|
数据表 |
- | TO-220-2 Full Pack | Tube | Active | Standard | 400 V | 1.3 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 400 V | 80pF @ 4V, 1MHz | 10A | - | - | Through Hole | ITO-220AC | -55°C ~ 150°C |
|
|
HERAF1006GH80NS, 10A, 600V, HIGH EFFICIENT Taiwan Semiconductor Corporation |
1,000 | - |
|
数据表 |
- | TO-220-2 Full Pack | Tube | Active | Standard | 600 V | 1.7 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 80 ns | 10 µA @ 600 V | 60pF @ 4V, 1MHz | 10A | Automotive | AEC-Q101 | Through Hole | ITO-220AC | -55°C ~ 150°C |
|
|
HERAF805GH50NS, 8A, 400V, HIGH EFFICIENT R Taiwan Semiconductor Corporation |
1,000 | - |
|
数据表 |
- | TO-220-2 Full Pack | Tube | Active | Standard | 400 V | 1.3 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 400 V | 80pF @ 4V, 1MHz | 8A | Automotive | AEC-Q101 | Through Hole | ITO-220AC | -55°C ~ 150°C |
|
|
HERAF1005GH50NS, 10A, 400V, HIGH EFFICIENT Taiwan Semiconductor Corporation |
1,000 | - |
|
数据表 |
- | TO-220-2 Full Pack | Tube | Active | Standard | 400 V | 1.3 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 400 V | 80pF @ 4V, 1MHz | 10A | Automotive | AEC-Q101 | Through Hole | ITO-220AC | -55°C ~ 150°C |
|
|
HERAF808GH80NS, 8A, 1000V, HIGH EFFICIENT Taiwan Semiconductor Corporation |
1,000 | - |
|
数据表 |
- | TO-220-2 Full Pack | Tube | Active | Standard | 1000 V | 1.7 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 80 ns | 10 µA @ 1000 V | 60pF @ 4V, 1MHz | 8A | Automotive | AEC-Q101 | Through Hole | ITO-220AC | -55°C ~ 150°C |
|
|
HERAF807GH80NS, 8A, 800V, HIGH EFFICIENT R Taiwan Semiconductor Corporation |
1,000 | - |
|
数据表 |
- | TO-220-2 Full Pack | Tube | Active | Standard | 800 V | 1.7 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 80 ns | 10 µA @ 800 V | 60pF @ 4V, 1MHz | 8A | Automotive | AEC-Q101 | Through Hole | ITO-220AC | -55°C ~ 150°C |
