STMicroelectronics|单个二极管 - 页 73

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
STTH802B DIODE GEN PURP 200V 8A DPAK STMicroelectronics	6,462	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	Standard	200 V	1.05 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	6 µA @ 200 V	-	8A	-	-	Surface Mount	DPAK	175°C (Max)
STTH806G DIODE GEN PURP 600V 8A D2PAK STMicroelectronics	9,125	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	Standard	600 V	1.85 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	8 µA @ 600 V	-	8A	-	-	Surface Mount	D2PAK	175°C (Max)
STTH75S12W DIODE GEN PURP 1.2KV 75A DO247 STMicroelectronics	295	-	询价单	数据表	-	DO-247-2 (Straight Leads)	Tube	Active	Standard	1200 V	3.2 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	50 µA @ 1200 V	-	75A	-	-	Through Hole	DO-247	-40°C ~ 175°C
STPSC10H12G2-TR DIODE SIL CARB 1.2KV 10A D2PAK STMicroelectronics	570	-	询价单	数据表	ECOPACK®2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 1200 V	725pF @ 0V, 1MHz	10A	-	-	Surface Mount	D2PAK HV	-40°C ~ 175°C
STTH8R06G DIODE GEN PURP 600V 8A D2PAK STMicroelectronics	8,239	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	Standard	600 V	2.9 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	30 µA @ 600 V	-	8A	-	-	Surface Mount	D2PAK	175°C (Max)
STPSC10H12G2Y-TR DIODE SIL CARB 1.2KV 10A D2PAK STMicroelectronics	498	-	询价单	数据表	ECOPACK®2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 1200 V	725pF @ 0V, 1MHz	10A	Automotive	AEC-Q101	Surface Mount	D2PAK HV	-40°C ~ 175°C
STPS1545R DIODE SCHOTTKY 45V 15A I2PAK STMicroelectronics	7,105	-	询价单	数据表	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	Schottky	45 V	840 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 45 V	-	15A	-	-	Through Hole	I2PAK	175°C (Max)
STPSC806D DIODE SIL CARB 600V 8A TO220AC STMicroelectronics	3,674	-	询价单	数据表	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	600 V	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 600 V	450pF @ 0V, 1MHz	8A	-	-	Through Hole	TO-220AC	-40°C ~ 175°C
STPSC20065WY DIODE SIL CARBIDE 650V 20A DO247 STMicroelectronics	258	-	询价单	数据表	ECOPACK®2	DO-247-2 (Straight Leads)	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.45 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 650 V	1250pF @ 0V, 1MHz	20A	Automotive	AEC-Q101	Through Hole	DO-247	-40°C ~ 175°C
STPSC20H12D DIODE SIL CARB 1.2KV 20A TO220AC STMicroelectronics	806	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	1.5 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 1200 V	1650pF @ 0V, 1MHz	20A	-	-	Through Hole	TO-220AC	-40°C ~ 175°C

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