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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
1N4938-1

1N4938-1

DIODE GEN PURP 175V 100MA DO35

Microchip Technology

369 -
1N4938-1

数据表

- DO-204AH, DO-35, Axial Bulk Active Standard 175 V 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 50 ns 100 nA @ 175 V - 100mA - - Through Hole DO-204AH (DO-35) -65°C ~ 175°C
FFSD0665A

FFSD0665A

DIODE SIL CARBIDE 650V 11A DPAK

onsemi

2,396 -
FFSD0665A

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 1.75 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 361pF @ 1V, 100kHz 11A - - Surface Mount TO-252 (DPAK) -55°C ~ 175°C
VS-EPH3006LHN3

VS-EPH3006LHN3

DIODE GEN PURP 600V 30A TO247AD

Vishay General Semiconductor - Diodes Division

180 -
VS-EPH3006LHN3

数据表

FRED Pt® TO-247-2 Tube Active Standard 600 V 2.65 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 26 ns 30 µA @ 600 V - 30A Automotive AEC-Q101 Through Hole TO-247AD -55°C ~ 175°C
S3D06065E

S3D06065E

DIODE SIL CARBIDE 650V 6A DPAK

SMC Diode Solutions

682 -
S3D06065E

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 8 µA @ 650 V 382pF @ 0V, 1MHz 6A - - Surface Mount DPAK -55°C ~ 175°C
VS-E5PX3006L-N3

VS-E5PX3006L-N3

DIODE GEN PURP 600V 30A TO247AD

Vishay General Semiconductor - Diodes Division

636 -
VS-E5PX3006L-N3

数据表

FRED Pt® TO-247-2 Tube Active Standard 600 V 2.1 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 41 ns 20 µA @ 600 V - 30A - - Through Hole TO-247AD -55°C ~ 175°C
TPMR10J S1G

TPMR10J S1G

DIODE GEN PURP 600V 10A TO277A

Taiwan Semiconductor Corporation

2,672 -
TPMR10J S1G

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Standard 600 V 1.8 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 40 ns 10 µA @ 600 V 140pF @ 4V, 1MHz 10A - - Surface Mount TO-277A (SMPC) -55°C ~ 175°C
UJ3D06512TS

UJ3D06512TS

DIODE SIL CARB 650V 12A TO220-2

Qorvo

10,601 -
UJ3D06512TS

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 1.7 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 650 V 392pF @ 1V, 1MHz 12A - - Through Hole TO-220-2 -55°C ~ 175°C
VS-E5TX1512S2LHM3

VS-E5TX1512S2LHM3

DIODE GEN PURP 1.2KV 15A TO263AB

Vishay General Semiconductor - Diodes Division

694 -
VS-E5TX1512S2LHM3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1200 V 3.3 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 77.5 ns 50 µA @ 1200 V - 15A Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
MSS1P6-E3/89A

MSS1P6-E3/89A

DIODE SCHOTTKY 60V 1A MICROSMP

Vishay General Semiconductor - Diodes Division

7,823 -
MSS1P6-E3/89A

数据表

eSMP® DO-219AD Tape & Reel (TR) Obsolete Schottky 60 V 680 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 150 µA @ 60 V 40pF @ 4V, 1MHz 1A - - Surface Mount DO-219AD (MicroSMP) -55°C ~ 150°C
MMBD4148-D87Z

MMBD4148-D87Z

DIODE GP 100V 200MA SOT23-3

onsemi

9,563 -
MMBD4148-D87Z

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete Standard 100 V 1 V @ 10 mA Small Signal =< 200mA (Io), Any Speed 4 ns 5 µA @ 75 V 4pF @ 0V, 1MHz 200mA - - Surface Mount SOT-23-3 150°C (Max)
CDBQR00340-HF

CDBQR00340-HF

DIODE SCHOTTKY 40V 30MA 0402

Comchip Technology

6,344 -
CDBQR00340-HF

数据表

- 0402 (1006 Metric) Tape & Reel (TR) Obsolete Schottky 40 V 370 mV @ 1 mA Small Signal =< 200mA (Io), Any Speed - 1 µA @ 40 V 1.5pF @ 1V, 1MHz 30mA - - Surface Mount 0402/SOD-923F 125°C (Max)
BY203-12STAP

BY203-12STAP

DIODE AVAL 1.2KV 250MA SOD57

Vishay General Semiconductor - Diodes Division

9,031 -
BY203-12STAP

数据表

- SOD-57, Axial Tape & Box (TB) Active Avalanche 1200 V 2.4 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 300 ns 2 µA @ 700 V - 250mA - - Through Hole SOD-57 -55°C ~ 150°C
STPSC6H065D

STPSC6H065D

DIODE SIL CARB 650V 6A TO220AC

STMicroelectronics

958 -
STPSC6H065D

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 1.75 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 300pF @ 0V, 1MHz 6A - - Through Hole TO-220AC -40°C ~ 175°C
VS-C4PU6006L-N3

VS-C4PU6006L-N3

DIODE GEN PURP 600V 30A TO247AD

Vishay General Semiconductor - Diodes Division

500 -
VS-C4PU6006L-N3

数据表

FRED Pt® TO-247-3 Tube Active Standard 600 V 1.6 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 65 ns 50 µA @ 600 V - 30A - - Through Hole TO-247AD -55°C ~ 175°C
BYT53G-TAP

BYT53G-TAP

DIODE AVALANCHE 400V 1.9A SOD57

Vishay General Semiconductor - Diodes Division

8,126 -
BYT53G-TAP

数据表

- SOD-57, Axial Tape & Box (TB) Active Avalanche 400 V 1.1 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 400 V - 1.9A - - Through Hole SOD-57 -55°C ~ 175°C
BY203-12STR

BY203-12STR

DIODE AVAL 1.2KV 250MA SOD57

Vishay General Semiconductor - Diodes Division

3,536 -
BY203-12STR

数据表

- SOD-57, Axial Tape & Reel (TR) Active Avalanche 1200 V 2.4 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 300 ns 2 µA @ 700 V - 250mA - - Through Hole SOD-57 -55°C ~ 150°C
BYT53G-TR

BYT53G-TR

DIODE AVALANCHE 400V 1.9A SOD57

Vishay General Semiconductor - Diodes Division

7,304 -
BYT53G-TR

数据表

- SOD-57, Axial Tape & Reel (TR) Active Avalanche 400 V 1.1 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 400 V - 1.9A - - Through Hole SOD-57 -55°C ~ 175°C
BAS21-HE3-18

BAS21-HE3-18

DIODE GP 200V 200MA SOT23-3

Vishay General Semiconductor - Diodes Division

7,911 -
BAS21-HE3-18

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete Standard 200 V 1.25 V @ 200 mA Small Signal =< 200mA (Io), Any Speed 50 ns 100 nA @ 200 V 5pF @ 0V, 1MHz 200mA Automotive AEC-Q101 Surface Mount SOT-23-3 -55°C ~ 150°C
SF4003-TAP

SF4003-TAP

DIODE AVALANCHE 200V 1A SOD57

Vishay General Semiconductor - Diodes Division

7,642 -
SF4003-TAP

数据表

- SOD-57, Axial Tape & Box (TB) Active Avalanche 200 V 1 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 200 V - 1A - - Through Hole SOD-57 -55°C ~ 175°C
SF4003-TR

SF4003-TR

DIODE AVALANCHE 200V 1A SOD57

Vishay General Semiconductor - Diodes Division

4,479 -
SF4003-TR

数据表

- SOD-57, Axial Tape & Reel (TR) Active Avalanche 200 V 1 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 200 V 76pF @ 4V, 1MHz 1A - - Through Hole SOD-57 -55°C ~ 175°C
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