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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SD200SA30B.TDIODE SCHOTTKY 30V 60A DIE SMC Diode Solutions |
3,290 | - |
|
数据表 |
- | Die | Tray | Active | Schottky | 30 V | 530 mV @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 6 mA @ 30 V | 3300pF @ 5V, 1MHz | 60A | - | - | Surface Mount | Die | -55°C ~ 150°C |
|
|
SD200SA60B.TDIODE SCHOTTKY 60V 60A DIE SMC Diode Solutions |
3,943 | - |
|
数据表 |
- | Die | Tray | Active | Schottky | 60 V | 680 mV @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 6 mA @ 60 V | 2400pF @ 5V, 1MHz | 60A | - | - | Surface Mount | Die | -55°C ~ 150°C |
|
|
S3D10065LDIODE SIL CARBIDE 650V 31A 5DFN SMC Diode Solutions |
497 | - |
|
数据表 |
- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 787pF @ 0V, 1MHz | 31A | - | - | Surface Mount | 5-DFN (8x8) | -55°C ~ 175°C |
|
|
S3D12065GDIODE SIL CARBIDE 650V 35A D2PAK SMC Diode Solutions |
641 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 16 µA @ 650 V | 764pF @ 0V, 1MHz | 35A | - | - | Surface Mount | D2PAK | -55°C ~ 175°C |
|
SICR10650DIODE SIL CARB 650V 10A TO220AC SMC Diode Solutions |
168 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 695pF @ 0V, 1MHz | 10A | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
|
S4D10120G0DIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions |
800 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 1200 V | 772pF @ 0V, 1MHz | 30A | - | - | Surface Mount | TO-263-2 | -55°C ~ 175°C |
|
|
S4D10120G1200V, 10A, D2PAK, SIC SCHOTTKY SMC Diode Solutions |
133 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | Surface Mount | TO-263-2 | - |
|
|
SD200SC100A1.T1DIODE SCHOTTKY 100V 60A DIE SMC Diode Solutions |
2,879 | - |
|
数据表 |
- | Die | Tray | Active | Schottky | 100 V | 870 mV @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 100 V | 1500pF @ 5V, 1MHz | 60A | - | - | Surface Mount | Die | -55°C ~ 200°C |
|
SICRF10650DIODE SIL CARB 650V 10A ITO220AC SMC Diode Solutions |
194 | - |
|
数据表 |
- | TO-220-2 Full Pack, Isolated Tab | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 695pF @ 0V, 1MHz | 10A | - | - | Through Hole | ITO-220AC | -55°C ~ 175°C |
|
|
S3D20065EDIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions |
2,500 | - |
|
数据表 |
- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | Surface Mount | 5-DFN (8x8) | - |
