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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
V8PM45HM3/I

V8PM45HM3/I

DIODE SCHOTTKY 45V 8A TO277A

Vishay General Semiconductor - Diodes Division

5,118 -
V8PM45HM3/I

数据表

eSMP®, TMBS® TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 45 V 600 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 45 V 1450pF @ 4V, 1MHz 8A Automotive AEC-Q101 Surface Mount TO-277A (SMPC) -40°C ~ 175°C
V8PM15HM3/I

V8PM15HM3/I

DIODE SCHOTTKY 150V 8A TO277A

Vishay General Semiconductor - Diodes Division

5,300 -
V8PM15HM3/I

数据表

eSMP®, TMBS® TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 150 V 1.08 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 150 µA @ 150 V 460pF @ 4V, 1MHz 8A Automotive AEC-Q101 Surface Mount TO-277A (SMPC) -40°C ~ 175°C
JANTX1N3291

JANTX1N3291

DIODE GEN PURP 400V 100A DO205AA

Microchip Technology

5,671 -
JANTX1N3291

数据表

- DO-205AA, DO-8, Stud Bulk Active Standard 400 V 1.55 V @ 310 A Fast Recovery =< 500ns, > 200mA (Io) - 10 mA @ 400 V - 100A Military MIL-PRF-19500/246 Chassis, Stud Mount DO-205AA (DO-8) -65°C ~ 200°C
SS3P3L-M3/86A

SS3P3L-M3/86A

DIODE SCHOTTKY 30V 3A TO277A

Vishay General Semiconductor - Diodes Division

9,145 -
SS3P3L-M3/86A

数据表

eSMP® TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 30 V 470 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 250 µA @ 30 V - 3A - - Surface Mount TO-277A (SMPC) -55°C ~ 150°C
SS3P3LHM3_A/H

SS3P3LHM3_A/H

DIODE SCHOTTKY 30V 3A TO277A

Vishay General Semiconductor - Diodes Division

3,826 -
SS3P3LHM3_A/H

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 30 V 470 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 250 µA @ 30 V - 3A Automotive AEC-Q101 Surface Mount TO-277A (SMPC) -55°C ~ 150°C
JANTX1N3293

JANTX1N3293

DIODE GEN PURP 600V 100A DO205AA

Microchip Technology

4,473 -
JANTX1N3293

数据表

- DO-205AA, DO-8, Stud Bulk Active Standard 600 V 1.55 V @ 310 A Standard Recovery >500ns, > 200mA (Io) - 10 mA @ 400 V - 100A Military MIL-PRF-19500/246 Chassis, Stud Mount DO-205AA (DO-8) -65°C ~ 200°C
S8MLHE3-TP

S8MLHE3-TP

Interface

Micro Commercial Co

5,698 -
S8MLHE3-TP

数据表

- DO-214AB, SMC Bulk Active Standard 1000 V 1.05 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 5 µA @ 1000 V 150pF @ 4V, 1MHz 8A - - Surface Mount DO-214AB (SMC) -55°C ~ 150°C
JAN1N3910

JAN1N3910

DIODE GEN PURP 100V 50A DO5

Microchip Technology

3,351 -
JAN1N3910

数据表

- DO-203AB, DO-5, Stud Bulk Active Standard 100 V 1.4 V @ 50 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 15 µA @ 100 V - 50A Military MIL-PRF-19500/308 Stud Mount DO-5 (DO-203AB) -65°C ~ 150°C
1N5400-E3/51

1N5400-E3/51

DIODE GEN PURP 50V 3A DO201AD

Vishay General Semiconductor - Diodes Division

7,009 -
1N5400-E3/51

数据表

- DO-201AD, Axial Bulk Obsolete Standard 50 V 1.2 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 50 V 30pF @ 4V, 1MHz 3A - - Through Hole DO-201AD -55°C ~ 150°C
JANTX1N3910A

JANTX1N3910A

DIODE GEN PURP 100V 50A DO203AB

Microchip Technology

9,339 -
JANTX1N3910A

数据表

- DO-203AB, DO-5, Stud Bulk Active Standard 100 V 1.4 V @ 50 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 15 µA @ 100 V - 50A Military MIL-PRF-19500/308 Stud Mount DO-203AB (DO-5) -65°C ~ 150°C
JANTXV1N3911

JANTXV1N3911

DIODE GEN PURP 200V 50A DO203AB

Microchip Technology

2,642 -
JANTXV1N3911

数据表

- DO-203AB, DO-5, Stud Bulk Active Standard 200 V 1.4 V @ 50 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 15 µA @ 200 V - 50A Military MIL-PRF-19500/308 Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 150°C
JANTXV1N4153-1

JANTXV1N4153-1

DIODE GEN PURP 50V 150MA DO35

Microchip Technology

7,195 -
JANTXV1N4153-1

数据表

- DO-204AH, DO-35, Axial Bulk Active Standard 50 V 880 mV @ 20 mA Small Signal =< 200mA (Io), Any Speed 4 ns 50 nA @ 50 V 2pF @ 0V, 1MHz 150mA Military MIL-PRF-19500/337 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
JANTX1N4153UR-1

JANTX1N4153UR-1

DIODE GEN PURP 50V 150MA DO213AA

Microchip Technology

2,046 -
JANTX1N4153UR-1

数据表

- DO-213AA Bulk Active Standard 50 V 550 mV @ 100 µA Small Signal =< 200mA (Io), Any Speed 4 ns - 2pF @ 0V, 1MHz 150mA Military MIL-PRF-19500/337 Surface Mount DO-213AA -65°C ~ 175°C
JANTXV1N4153UR-1

JANTXV1N4153UR-1

DIODE GEN PURP 50V 150MA DO213AA

Microchip Technology

2,647 -
JANTXV1N4153UR-1

数据表

- DO-213AA Bulk Active Standard 50 V 880 mV @ 20 mA Small Signal =< 200mA (Io), Any Speed 4 ns 50 nA @ 50 V 2pF @ 0V, 1MHz 150mA Military MIL-PRF-19500/337 Surface Mount DO-213AA -65°C ~ 175°C
JAN1N459

JAN1N459

DIODE GEN PURP 200V 150MA DO35

Microchip Technology

5,098 -
JAN1N459

数据表

- DO-204AH, DO-35, Axial Bulk Active Standard 200 V 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 1 µA @ 200 V - 150mA Military MIL-PRF-19500/193 Through Hole DO-204AH (DO-35) -65°C ~ 150°C
JAN1N4938-1

JAN1N4938-1

DIODE GEN PURP 175V 100MA DO35

Microchip Technology

7,550 -
JAN1N4938-1

数据表

- DO-204AH, DO-35, Axial Bulk Active Standard 175 V 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 50 ns 100 µA @ 200 V - 100mA Military MIL-PRF-19500/169 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
JANTX1N4938UR-1

JANTX1N4938UR-1

DIODE GP 175V 100MA DO213AA

Microchip Technology

4,458 -
JANTX1N4938UR-1

数据表

- DO-213AA Bulk Active Standard 175 V 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 50 µs 100 nA @ 175 V - 100mA Military MIL-PRF-19500/169 Surface Mount DO-213AA -65°C ~ 175°C
JANTX1N5196

JANTX1N5196

DIODE GEN PURP 225V 200MA DO35

Microchip Technology

5,637 -
JANTX1N5196

数据表

- DO-204AH, DO-35, Axial Bulk Active Standard 225 V 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 1 µA @ 250 V - 200mA Military MIL-PRF-19500/118 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
JAN1N6391

JAN1N6391

DIODE SCHOTTKY 45V 22.5A DO203AA

Microchip Technology

4,813 -
JAN1N6391

数据表

- DO-203AA, DO-4, Stud Bulk Active Schottky 45 V 680 mV @ 50 A Fast Recovery =< 500ns, > 200mA (Io) - 1.5 mA @ 45 V 2000pF @ 5V, 1MHz 22.5A Military MIL-PRF-19500/553 Chassis, Stud Mount DO-203AA (DO-4) -55°C ~ 175°C
1N5402-E3/51

1N5402-E3/51

DIODE GEN PURP 200V 3A DO201AD

Vishay General Semiconductor - Diodes Division

7,952 -
1N5402-E3/51

数据表

- DO-201AD, Axial Bulk Obsolete Standard 200 V 1.2 V @ 3 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 200 V 30pF @ 4V, 1MHz 3A - - Through Hole DO-201AD -50°C ~ 150°C
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