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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
CGRC507-GDIODE GEN PURP 1KV 5A DO214AB |
8,428 | - |
|
数据表 |
- | DO-214AB, SMC | Tape & Reel (TR) | Active | Standard | 1000 V | 1.15 V @ 5 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1000 V | - | 5A | - | - | Surface Mount | DO-214AB (SMC) | 150°C (Max) |
|
VT760HM3/4WDIODE SCHOTTKY 60V 7.5A TO220AC |
6,693 | - |
|
数据表 |
TMBS® | TO-220-2 | Tube | Obsolete | Schottky | 60 V | 800 mV @ 7.5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 700 µA @ 60 V | - | 7.5A | Automotive | AEC-Q101 | Through Hole | TO-220AC | -55°C ~ 150°C |
|
|
CGRC502-GDIODE GEN PURP 100V 5A DO214AB |
2,486 | - |
|
数据表 |
- | DO-214AB, SMC | Tape & Reel (TR) | Active | Standard | 100 V | 1.15 V @ 5 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | 5A | - | - | Surface Mount | DO-214AB (SMC) | 150°C (Max) |
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|
FR10M-TPDIODE GEN PURP 1KV 10A DO214AB |
8,914 | - |
|
数据表 |
- | DO-214AB, SMC | Tape & Reel (TR) | Obsolete | Standard | 1000 V | 1.3 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 10 µA @ 1000 V | - | 10A | - | - | Surface Mount | DO-214AB (HSMC) | -55°C ~ 150°C |
|
GB02SHT01-46DIODE SIL CARBIDE 100V 4A TO46 |
6,492 | - |
|
数据表 |
- | TO-206AB, TO-46-3 Metal Can | Bulk | Obsolete | SiC (Silicon Carbide) Schottky | 100 V | 1.6 V @ 1 A | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 100 V | 76pF @ 1V, 1MHz | 4A | - | - | Through Hole | TO-46 | -55°C ~ 210°C |
|
|
CGRC503-GDIODE GEN PURP 200V 5A DO214AB |
9,146 | - |
|
数据表 |
- | DO-214AB, SMC | Tape & Reel (TR) | Active | Standard | 200 V | 1.15 V @ 5 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 200 V | - | 5A | - | - | Surface Mount | DO-214AB (SMC) | 150°C (Max) |
|
VS-1EFH01WHM3-18DIODE GEN PURP 100V 1A DO219AB |
3,717 | - |
|
数据表 |
FRED Pt® | DO-219AB | Tape & Reel (TR) | Obsolete | Standard | 100 V | 930 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 16 ns | 2 µA @ 100 V | - | 1A | Automotive | AEC-Q101 | Surface Mount | DO-219AB (SMF) | -65°C ~ 175°C |
|
|
VS-1EFH01W-M3-18DIODE GEN PURP 100V 1A DO219AB |
5,109 | - |
|
数据表 |
FRED Pt® | DO-219AB | Tape & Reel (TR) | Obsolete | Standard | 100 V | 930 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 16 ns | 2 µA @ 100 V | - | 1A | - | - | Surface Mount | DO-219AB (SMF) | -65°C ~ 175°C |
|
|
VS-1EFH02W-M3-18DIODE GEN PURP 200V 1A DO219AB |
4,394 | - |
|
数据表 |
FRED Pt® | DO-219AB | Tape & Reel (TR) | Obsolete | Standard | 200 V | 930 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 16 ns | 2 µA @ 200 V | - | 1A | - | - | Surface Mount | DO-219AB (SMF) | -65°C ~ 175°C |
|
BYC8B-600PQPDIODE GEN PURP 600V 8A D2PAK |
4,645 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 600 V | 3.4 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 18 ns | 20 µA @ 600 V | - | 8A | - | - | Surface Mount | D2PAK | 175°C (Max) |
|
GP2D050A120BDIODE SIL CARB 1.2KV 50A TO247-2 |
8,045 | - |
|
数据表 |
Amp+™ | TO-247-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 3174pF @ 1V, 1MHz | 50A | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
C2D05120E-TRDIODE SIL CARB 1.2KV 17.5A TO252 |
8,288 | - |
|
数据表 |
Zero Recovery™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 455pF @ 0V, 1MHz | 17.5A | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
|
GP2D003A065ADIODE SIL CARB 650V 3A TO220-2 |
7,306 | - |
|
数据表 |
Amp+™ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 1.65 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 158pF @ 1V, 1MHz | 3A | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
|
GP2D005A120ADIODE SIL CARB 1.2KV 5A TO220-2 |
9,665 | - |
|
数据表 |
Amp+™ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 1200 V | 317pF @ 1V, 1MHz | 5A | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
GP2D005A120CDIODE SIL CARB 1.2KV 5A TO252-2L |
8,410 | - |
|
数据表 |
Amp+™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 1200 V | 317pF @ 1V, 1MHz | 5A | - | - | Surface Mount | TO-252-2L (DPAK) | -55°C ~ 175°C |
|
|
GP2D005A170BDIODE SIL CARB 1.7KV 5A TO247-2 |
3,053 | - |
|
数据表 |
Amp+™ | TO-247-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 1700 V | 1.75 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 1700 V | 406pF @ 1V, 1MHz | 5A | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
|
GP2D006A065ADIODE SIL CARB 650V 6A TO220-2 |
4,038 | - |
|
数据表 |
Amp+™ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 1.65 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 316pF @ 1V, 1MHz | 6A | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
|
GP2D006A065CDIODE SIL CARB 650V 6A TO252-2L |
9,030 | - |
|
数据表 |
Amp+™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 1.65 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 316pF @ 1V, 1MHz | 6A | - | - | Surface Mount | TO-252-2L (DPAK) | -55°C ~ 175°C |
|
|
GP2D010A120ADIODE SIL CARB 1.2KV 10A TO220-2 |
7,035 | - |
|
数据表 |
Amp+™ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1200 V | 635pF @ 1V, 1MHz | 10A | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
|
GP2D010A120BDIODE SIL CARB 1.2KV 10A TO247-2 |
6,089 | - |
|
数据表 |
Amp+™ | TO-247-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1200 V | 635pF @ 1V, 1MHz | 10A | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
