ROHM Semiconductor|单个二极管 - 页 21

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
RSX301LA-30TR DIODE SCHOTTKY 30V 3A PMDT Rohm Semiconductor	7,929	-	询价单	数据表	-	SOD-128	Tape & Reel (TR)	Obsolete	Schottky	30 V	420 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 30 V	-	3A	-	-	Surface Mount	PMDT	150°C (Max)
SCS215ANHRTRL 650V 15A SMD SILICON CARBIDE Rohm Semiconductor	500	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.55 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 600 V	550pF @ 1V, 1MHz	15A	Automotive	AEC-Q101	Surface Mount	TO-263L	175°C
SCS212AJTLL DIODE SIL CARB 650V 12A TO263AB Rohm Semiconductor	960	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.55 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	240 µA @ 600 V	-	12A	-	-	Surface Mount	TO-263AB	175°C (Max)
SCS320AMC7G DIODE SIL CARB 650V 20A TO220FM Rohm Semiconductor	1,000	-	询价单	数据表	-	TO-220-2 Full Pack	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.5 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	1000pF @ 1V, 1MHz	20A	-	-	Through Hole	TO-220FM	175°C
SCS320AGC16 DIODE SIL CARB 650V 20A TO220ACP Rohm Semiconductor	1,000	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.5 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	1000pF @ 1V, 1MHz	20A	-	-	Through Hole	TO-220ACFP	175°C
SCS220ANHRTRL 650V, 20A, SMD, SILICON-CARBIDE Rohm Semiconductor	1,000	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.55 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	400 µA @ 600 V	730pF @ 1V, 1MHz	20A	Automotive	AEC-Q101	Surface Mount	LPDS	175°C
SCS210KNHRTRL 1200V, 10A, SMD, SILICON-CARBIDE Rohm Semiconductor	994	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	530pF @ 1V, 1MHz	10A	Automotive	AEC-Q101	Surface Mount	LPDS	175°C
SCS230ANHRTRL 650V, 30A, SMD, SILICON-CARBIDE Rohm Semiconductor	892	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.55 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	600 µA @ 600 V	1090pF @ 1V, 1MHz	30A	Automotive	AEC-Q101	Surface Mount	LPDS	175°C
SCS220KNHRTRL 1200V 20A SMD SILICON CARBIDE Rohm Semiconductor	500	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	1.6 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	400 µA @ 1200 V	1050pF @ 1V, 1MHz	20A	Automotive	AEC-Q101	Surface Mount	TO-263L	175°C
RB161VA-20TR DIODE SCHOTTKY 20V 1A TUMD2 Rohm Semiconductor	5,835	-	询价单	数据表	-	2-SMD, Flat Leads	Tape & Reel (TR)	Active	Schottky	20 V	420 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 20 V	-	1A	-	-	Surface Mount	TUMD2	125°C (Max)

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