Panjit International Inc.|单个二极管 - 页 52

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
PCDP1065GB_T0_00601 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	1,975	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.6 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 650 V	446pF @ 1V, 1MHz	10A	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
PCDP1265GC_T0_00601 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	2,000	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.8 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 650 V	372pF @ 1V, 1MHz	12A	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
PCDP15120GB_T0_00601 SIC DIODE 1200V/15A IN TO-220AC Panjit International Inc.	2,000	-	询价单	数据表	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
PCDP1265GB_T0_00601 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	2,000	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.6 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 650 V	529pF @ 1V, 1MHz	12A	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
PCDP1665GC_T0_00601 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	2,000	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.8 V @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 650 V	446pF @ 1V, 1MHz	16A	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
PCDP2065GC_T0_00601 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	2,000	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.8 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 650 V	529pF @ 1V, 1MHz	20A	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
PCDP1665GB_T0_00601 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	2,000	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.6 V @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 650 V	995pF @ 1V, 100kHz	16A	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
PCDP20120GB_T0_00601 SIC DIODE 1200V/20A IN TO-220AC Panjit International Inc.	2,000	-	询价单	数据表	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
PCDP2065GB_T0_00601 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	2,000	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.6 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 650 V	1211pF @ 1V, 1MHz	20A	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
ER306A_R2_00001 GLASS PASSIVATED SUPERFAST RECOV Panjit International Inc.	6,908	-	询价单	数据表	-	DO-201AD, Axial	Tape & Reel (TR)	Active	Standard	700 V	2 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 700 V	35pF @ 4V, 1MHz	3A	-	-	Through Hole	DO-201AD	-55°C ~ 150°C

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