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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PCDP0865GC_T0_00601650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc. |
2,000 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.8 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 650 V | 260pF @ 1V, 1MHz | 8A | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
|
PCDP0665GB_T0_00601650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc. |
2,000 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.6 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 650 V | 271pF @ 1V, 1MHz | 6A | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
|
PCDD0865GB_L2_00601650V/8A IN TO-252AA PACKAGE SILI Panjit International Inc. |
2,990 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.6 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 527pF @ 1V, 1MHz | 8A | - | - | Surface Mount | TO-252AA | -55°C ~ 175°C |
|
|
BD5200YS_S2_00001DIODE SCHOTTKY 200V 5A TO252 Panjit International Inc. |
4,401 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | Schottky | 200 V | 900 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 200 V | - | 5A | - | - | Surface Mount | TO-252 | -65°C ~ 175°C |
|
|
PCDG10120GB_L2_00601SIC DIODE 1200V/10A IN TO-252AA Panjit International Inc. |
6,000 | - |
|
数据表 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
PCDF0865G1_T0_00601650V/8A THROUGH HOLE SILICON CAR Panjit International Inc. |
2,000 | - |
|
数据表 |
- | TO-220-2 Full Pack, Isolated Tab | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 300pF @ 1V, 1MHz | 8A | - | - | Through Hole | ITO-220AC | -55°C ~ 175°C |
|
|
PCDP0865GB_T0_00601650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc. |
2,000 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.6 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 650 V | 372pF @ 1V, 1MHz | 8A | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
|
PCDP1065GC_T0_00601650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc. |
1,961 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.8 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 650 V | 271pF @ 1V, 1MHz | 10A | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
|
PCDD1065GB_L2_00601650V/10A IN TO-252AA PACKAGE SIL Panjit International Inc. |
3,000 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 610pF @ 1V, 1MHz | 10A | - | - | Surface Mount | TO-252AA | -55°C ~ 175°C |
|
|
PCDF1065G1_T0_00601650V/10A THROUGH HOLE SILICON CA Panjit International Inc. |
2,000 | - |
|
数据表 |
- | TO-220-2 Full Pack, Isolated Tab | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 380pF @ 1V, 1MHz | 10A | - | - | Through Hole | ITO-220AC | -55°C ~ 175°C |
