富聪科技订单满¥1000免运费
关注我们:

单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
1PS59SB10,115

1PS59SB10,115

DIODE SCHOT 30V 200MA SMT3 MPAK

NXP USA Inc.

8,897 -
1PS59SB10,115

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete Schottky 30 V 800 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed 5 ns 2 µA @ 25 V 10pF @ 1V, 1MHz 200mA - - Surface Mount SMT3; MPAK 125°C (Max)
1PS59SB20,115

1PS59SB20,115

DIODE SCHOT 40V 500MA SMT3 MPAK

NXP USA Inc.

2,883 -
1PS59SB20,115

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete Schottky 40 V 550 mV @ 500 mA Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 35 V 90pF @ 0V, 1MHz 500mA - - Surface Mount SMT3; MPAK 125°C (Max)
BAS216,135

BAS216,135

DIODE GEN PURP 75V 250MA SOD110

NXP USA Inc.

9,723 -
BAS216,135

数据表

- SOD-110 Tape & Reel (TR) Obsolete Standard 75 V 1.25 V @ 150 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 1 µA @ 75 V 1.5pF @ 0V, 1MHz 250mA - - Surface Mount SOD-110 150°C (Max)
PMEG2010AEK,115

PMEG2010AEK,115

DIODE SCHOTT 20V 1A SMT3 MPAK

NXP USA Inc.

8,392 -
PMEG2010AEK,115

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete Schottky 20 V 450 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 20 V 70pF @ 5V, 1MHz 1A - - Surface Mount SMT3; MPAK 150°C (Max)
1N4448,113

1N4448,113

DIODE GEN PURP 100V 200MA ALF2

NXP USA Inc.

4,102 -
1N4448,113

数据表

- DO-204AH, DO-35, Axial Tape & Reel (TR) Obsolete Standard 100 V 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 4 ns 25 nA @ 20 V 4pF @ 0V, 1MHz 200mA - - Through Hole ALF2 200°C (Max)
1N4448,143

1N4448,143

DIODE GEN PURP 100V 200MA ALF2

NXP USA Inc.

5,508 -
1N4448,143

数据表

- DO-204AH, DO-35, Axial Cut Tape (CT) Obsolete Standard 100 V 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 4 ns 25 nA @ 20 V 4pF @ 0V, 1MHz 200mA - - Through Hole ALF2 200°C (Max)
BY329-1500S,127

BY329-1500S,127

DIODE GEN PURP 1.5KV 6A TO220AC

NXP USA Inc.

4,378 -
BY329-1500S,127

数据表

- TO-220-2 Tube Obsolete Standard 1500 V 1.6 V @ 6.5 A Fast Recovery =< 500ns, > 200mA (Io) 160 ns 250 µA @ 1300 V - 6A - - Through Hole TO-220AC 150°C (Max)
BY329X-1500S,127

BY329X-1500S,127

DIODE GEN PURP 1.5KV 6A TO220FP

NXP USA Inc.

6,244 -
BY329X-1500S,127

数据表

- TO-220-2 Full Pack Tube Obsolete Standard 1500 V 1.6 V @ 6.5 A Fast Recovery =< 500ns, > 200mA (Io) 160 ns 250 µA @ 1300 V - 6A - - Through Hole TO-220FP 150°C (Max)
BY359X-1500S,127

BY359X-1500S,127

DIODE GEN PURP 1.5KV 7A TO220FP

NXP USA Inc.

6,737 -
BY359X-1500S,127

数据表

- TO-220-2 Full Pack Tube Obsolete Standard 1500 V 2 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 350 ns 100 µA @ 1300 V - 7A - - Through Hole TO-220FP 150°C (Max)
BY459X-1500,127

BY459X-1500,127

DIODE GEN PURP 1.5KV 12A TO220FP

NXP USA Inc.

4,952 -
BY459X-1500,127

数据表

- TO-220-2 Full Pack Tube Obsolete Standard 1500 V 1.3 V @ 6.5 A Fast Recovery =< 500ns, > 200mA (Io) 350 ns 250 µA @ 1300 V - 12A - - Through Hole TO-220FP 150°C (Max)
共 128 条记录«上一页1... 678910111213下一页»
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户