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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
UFS340G/TR13

UFS340G/TR13

DIODE GEN PURP 400V 3A DO215AB

Microchip Technology

5,825 -
UFS340G/TR13

数据表

- DO-215AB, SMC Gull Wing Tape & Reel (TR) Active Standard 400 V 1.1 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 400 V - 3A - - Surface Mount DO-215AB -55°C ~ 175°C
UFS350G/TR13

UFS350G/TR13

DIODE GEN PURP 500V 3A DO215AB

Microchip Technology

8,957 -
UFS350G/TR13

数据表

- DO-215AB, SMC Gull Wing Tape & Reel (TR) Active Standard 500 V 1.1 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 500 V - 3A - - Surface Mount DO-215AB -55°C ~ 175°C
UFS360G/TR13

UFS360G/TR13

DIODE GEN PURP 600V 3A DO215AB

Microchip Technology

9,311 -
UFS360G/TR13

数据表

- DO-215AB, SMC Gull Wing Tape & Reel (TR) Active Standard 600 V 1.2 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 10 µA @ 600 V - 3A - - Surface Mount DO-215AB -55°C ~ 175°C
UFS370G/TR13

UFS370G/TR13

DIODE GEN PURP 700V 3A DO215AB

Microchip Technology

9,685 -
UFS370G/TR13

数据表

- DO-215AB, SMC Gull Wing Tape & Reel (TR) Active Standard 700 V 1.2 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 10 µA @ 700 V - 3A - - Surface Mount DO-215AB -55°C ~ 175°C
UFS380G/TR13

UFS380G/TR13

DIODE GEN PURP 800V 3A DO215AB

Microchip Technology

2,492 -
UFS380G/TR13

数据表

- DO-215AB, SMC Gull Wing Tape & Reel (TR) Active Standard 800 V 1.2 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 10 µA @ 800 V - 3A - - Surface Mount DO-215AB -55°C ~ 175°C
1N648-1

1N648-1

DIODE GEN PURP 500V 400MA DO35

Microchip Technology

7,185 -
1N648-1

数据表

- DO-204AH, DO-35, Axial Bulk Discontinued at Digi-Key Standard 500 V 1 V @ 400 mA Standard Recovery >500ns, > 200mA (Io) - 50 nA @ 500 V - 400mA - - Through Hole DO-204AH (DO-35) -65°C ~ 175°C
1N648

1N648

DIODE GEN PURP 500V DO35

Microchip Technology

2,386 -
1N648

数据表

- DO-204AH, DO-35, Axial Bulk Active Standard 500 V 1 V @ 400 mA Standard Recovery >500ns, > 200mA (Io) - - - - - - Through Hole DO-204AH (DO-35) -
1N3595-1E3

1N3595-1E3

DIODE GEN PURP 125V 150MA DO35

Microchip Technology

5,916 -
1N3595-1E3

数据表

- DO-204AH, DO-35, Axial Bulk Active Standard 125 V 1 V @ 200 mA Small Signal =< 200mA (Io), Any Speed 3 µs 1 nA @ 125 V - 150mA - - Through Hole DO-204AH (DO-35) -65°C ~ 175°C
1N3595-1/TR

1N3595-1/TR

DIODE GEN PURP 125V 150MA DO35

Microchip Technology

8,217 -
1N3595-1/TR

数据表

- DO-204AH, DO-35, Axial Tape & Reel (TR) Active Standard 125 V 1 V @ 200 mA Small Signal =< 200mA (Io), Any Speed 3 µs 1 nA @ 125 V - 150mA - - Through Hole DO-204AH (DO-35) -65°C ~ 175°C
1N3595A-1

1N3595A-1

DIODE GEN PURP 125V 150MA DO35

Microchip Technology

5,338 -
1N3595A-1

数据表

- DO-204AH, DO-35, Axial Bulk Active Standard 125 V 920 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed 3 µs 2 nA @ 125 V - 150mA - - Through Hole DO-204AH (DO-35) -65°C ~ 175°C
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