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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANS1N5552USDIODE GEN PURP 600V 3A B SQ-MELF Microchip Technology |
7,413 | - |
|
数据表 |
- | SQ-MELF, B | Bulk | Active | Standard | 600 V | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 150 V | - | 3A | Military | MIL-PRF-19500/420 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
|
JANS1N5553USDIODE GEN PURP 800V 3A B SQ-MELF Microchip Technology |
7,195 | - |
|
数据表 |
- | SQ-MELF, B | Bulk | Active | Standard | 800 V | 1.3 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 150 V | - | 3A | Military | MIL-PRF-19500/420 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
JANS1N5552US/TRDIODE GEN PURP 600V 3A B SQ-MELF Microchip Technology |
3,094 | - |
|
数据表 |
- | SQ-MELF, B | Tape & Reel (TR) | Active | Standard | 600 V | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 150 V | - | 3A | Military | MIL-PRF-19500/420 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
JANS1N5550US/TRDIODE GEN PURP 200V 3A B SQ-MELF Microchip Technology |
2,265 | - |
|
数据表 |
- | SQ-MELF, B | Tape & Reel (TR) | Active | Standard | 200 V | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | - | - | 3A | Military | MIL-PRF-19500/420 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
|
JANS1N5553US/TRSTD RECTIFIER Microchip Technology |
8,045 | - |
|
数据表 |
- | SQ-MELF, B | Tape & Reel (TR) | Active | Standard | 800 V | 1.3 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 800 V | - | 3A | Military | MIL-PRF-19500/420 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
|
UFR3260RDIODE GP REV 600V 30A DO203AA Microchip Technology |
3,007 | - |
|
数据表 |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 600 V | 1.35 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 15 µA @ 600 V | 100pF @ 10V, 1MHz | 30A | - | - | Stud Mount | DO-203AA (DO-4) | -65°C ~ 175°C |
|
|
R43160DIODE GP 1.6KV 150A DO205AA Microchip Technology |
6,739 | - |
|
数据表 |
- | DO-205AA, DO-8, Stud | Bulk | Active | Standard, Reverse Polarity | 1600 V | 1.1 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | 50 µA @ 1600 V | - | 150A | - | - | Stud Mount | DO-205AA (DO-8) | -65°C ~ 200°C |
|
|
1N4590DIODE GEN PURP 400V 150A DO205AA Microchip Technology |
3,437 | - |
|
数据表 |
- | DO-205AA, DO-8, Stud | Bulk | Active | Standard | 400 V | 1.1 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | 50 µA @ 400 V | - | 150A | - | - | Stud Mount | DO-205AA (DO-8) | -65°C ~ 200°C |
|
|
1N3294ARDIODE GEN PURP 800V 100A DO205AA Microchip Technology |
2,972 | - |
|
数据表 |
- | DO-205AA, DO-8, Stud | Bulk | Active | Standard, Reverse Polarity | 800 V | 1.1 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | 13 mA @ 800 V | - | 100A | - | - | Chassis, Stud Mount | DO-205AA (DO-8) | -65°C ~ 200°C |
|
|
JANS1N5550USDIODE GEN PURP 200V 3A B SQ-MELF Microchip Technology |
2,549 | - |
|
数据表 |
- | SQ-MELF, B | Bulk | Active | Standard | 200 V | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | - | - | 3A | Military | MIL-PRF-19500/420 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
