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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANS1N5807US/TRDIODE GEN PURP 50V 3A B SQ-MELF Microchip Technology |
4,993 | - |
|
数据表 |
- | SQ-MELF, B | Tape & Reel (TR) | Active | Standard | 50 V | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | - | - | 3A | Military | MIL-PRF-19500/477 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
JANS1N5614USDIODE GEN PURP 200V 1A A SQ-MELF Microchip Technology |
2,591 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 200 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | - | - | 1A | Military | MIL-PRF-19500/427 | Surface Mount | A, SQ-MELF | -65°C ~ 200°C |
|
JANS1N5809USDIODE GEN PURP 100V 3A B SQ-MELF Microchip Technology |
4,012 | - |
|
数据表 |
- | SQ-MELF, B | Bulk | Active | Standard | 100 V | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | - | - | 3A | Military | MIL-PRF-19500/477 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
|
1N6080USDIODE GEN PURP 100V 2A G-MELF Microchip Technology |
2,287 | - |
|
数据表 |
- | SQ-MELF, G | Bulk | Discontinued at Digi-Key | Standard | 100 V | 1.5 V @ 37.7 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 10 µA @ 100 V | - | 2A | - | - | Surface Mount | G-MELF (D-5C) | -65°C ~ 155°C |
|
|
1N5828DIODE SCHOTTKY 40V 15A DO203AA Microchip Technology |
2,150 | - |
|
数据表 |
- | DO-203AA, DO-4, Stud | Bulk | Active | Schottky | 40 V | 870 mV @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10 mA @ 20 V | - | 15A | - | - | Stud Mount | DO-203AA (DO-4) | -55°C ~ 150°C |
|
|
1N4723STANDARD RECTIFIER Microchip Technology |
8,544 | - |
|
数据表 |
- | Axial | Bulk | Active | Standard | 600 V | 1 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 25 µA @ 600 V | - | 3A | - | - | Through Hole | Axial | -65°C ~ 175°C |
|
|
JANS1N5616DIODE GEN PURP 400V 1A A AXIAL Microchip Technology |
2,272 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 400 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 400 V | - | 1A | Military | MIL-PRF-19500/427 | Through Hole | A, Axial | -65°C ~ 200°C |
|
|
1N4723/TRDIODE GEN PURP 600V 3A AXIAL Microchip Technology |
7,728 | - |
|
数据表 |
- | Axial | Tape & Reel (TR) | Active | Standard | 600 V | 1 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 25 µA @ 600 V | - | 3A | - | - | Through Hole | Axial | -65°C ~ 175°C |
|
JANS1N5616/TRDIODE GEN PURP 400V 1A A AXIAL Microchip Technology |
8,238 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 400 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 400 V | - | 1A | Military | MIL-PRF-19500/427 | Through Hole | A, Axial | -65°C ~ 200°C |
|
|
SBR2520DIODE SCHOTTKY 20V 25A DO4 Microchip Technology |
6,102 | - |
|
数据表 |
- | DO-203AA, DO-4, Stud | Bulk | Active | Schottky | 20 V | 1 V @ 25 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 350 µA @ 20 V | - | 25A | - | - | Stud Mount | DO-4 (DO-203AA) | - |
