| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流(Io) | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANTX1N6642UB2/TRSIGNAL OR COMPUTER DIODE Microchip Technology |
4,249 | - |
|
数据表 |
- | 2-SMD, No Lead | Tape & Reel (TR) | Active | Standard | 75 V | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 5 ns | 500 nA @ 75 V | 5pF @ 0V, 1MHz | 300mA | Military | MIL-PRF-19500/578 | Surface Mount | UB2 | -65°C ~ 175°C |
|
JANTX1N6642UB2R/TRSIGNAL OR COMPUTER DIODE Microchip Technology |
9,532 | - |
|
数据表 |
- | 2-SMD, No Lead | Tape & Reel (TR) | Active | Standard | 75 V | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 5 ns | 500 nA @ 75 V | 5pF @ 0V, 1MHz | 300mA | Military | MIL-PRF-19500/578 | Surface Mount | UB2 | -65°C ~ 175°C |
|
|
JANTXV1N5711-1DIODE SCHOTTKY 50V 33MA DO35 Microchip Technology |
8,914 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Bulk | Active | Schottky | 50 V | 1 V @ 15 mA | Small Signal =< 200mA (Io), Any Speed | - | 200 nA @ 50 V | 2pF @ 0V, 1MHz | 33mA | Military | MIL-PRF-19500/444 | Through Hole | DO-204AH (DO-35) | -65°C ~ 150°C |
|
JANHCA1N5822DIODE SCHOTTKY 40V 3A B AXIAL Microchip Technology |
5,976 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Schottky | 40 V | 500 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 40 V | - | 3A | Military | MIL-PRF-19500/620 | Through Hole | B, Axial | -65°C ~ 125°C |
|
JANTXV1N5711-1/TRDIODE SCHOTTKY 50V 33MA DO35 Microchip Technology |
9,749 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Tape & Reel (TR) | Active | Schottky | 50 V | 1 V @ 15 mA | Small Signal =< 200mA (Io), Any Speed | - | 200 nA @ 50 V | 2pF @ 0V, 1MHz | 33mA | Military | MIL-PRF-19500/444 | Through Hole | DO-204AH (DO-35) | -65°C ~ 150°C |
|
1N5807URSDIODE GEN PURP 50V 3A SQ-MELF B Microchip Technology |
9,462 | - |
|
数据表 |
- | SQ-MELF, B | Bulk | Active | Standard | 50 V | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 50 V | 60pF @ 10V, 1MHz | 3A | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
1N5809URSDIODE GP 100V 3A SQ-MELF B Microchip Technology |
3,283 | - |
|
数据表 |
- | SQ-MELF, B | Bulk | Active | Standard | 100 V | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | 60pF @ 10V, 1MHz | 3A | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
1N5811URSDIODE GP 150V 3A SQ-MELF B Microchip Technology |
2,030 | - |
|
数据表 |
- | SQ-MELF, B | Bulk | Active | Standard | 150 V | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | 60pF @ 10V, 1MHz | 3A | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
|
UPS840E3/TR13DIODE SCHOTTKY 40V 8A POWERMITE3 Microchip Technology |
37,237 | - |
|
数据表 |
- | Powermite®3 | Tape & Reel (TR) | Active | Schottky | 40 V | 450 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5 mA @ 40 V | - | 8A | - | - | Surface Mount | Powermite 3 | -55°C ~ 125°C |
|
JANS1N5614DIODE GEN PURP 200V 1A A AXIAL Microchip Technology |
8,122 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 200 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 200 V | - | 1A | Military | MIL-PRF-19500/427 | Through Hole | A, Axial | -65°C ~ 200°C |