Luminus Devices Inc.|单个二极管 - 页 4

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
SDS120J010H3-ISATH DIODE 1200V-10A TO247-2L Luminus Devices Inc.	200	-	询价单	数据表	Sanan TO247	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 1200 V	780pF @ 0V, 1MHz	36A	-	-	Through Hole	TO-247-2L	-55°C ~ 175°C
SDS065J020H3-ISATH DIODE 650V-20A TO247-2L Luminus Devices Inc.	190	-	询价单	数据表	Sanan TO247	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.5 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	1018pF @ 0V, 1MHz	51A	-	-	Through Hole	TO-247-2L	-55°C ~ 175°C
SDS120J015H3-ISATH DIODE 1200V-15A TO247-2L Luminus Devices Inc.	150	-	询价单	数据表	Sanan TO247	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	1.5 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	45 µA @ 1200 V	1182pF @ 0V, 1MHz	51A	-	-	Through Hole	TO-247-2L	-55°C ~ 175°C
SDS120J015C3-ISATH DIODE 1200V-15A TO220-2L Luminus Devices Inc.	150	-	询价单	数据表	Sanan TO220	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	1.5 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	45 µA @ 1200 V	1182pF @ 0V, 1MHz	51A	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C
SDS120J027H3-ISATH DIODE 1200V-27A TO247-2L Luminus Devices Inc.	150	-	询价单	数据表	Sanan TO247	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	1.8 V @ 27 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 1200 V	1761pF @ 0V, 1MHz	77A	-	-	Through Hole	TO-247-2L	-55°C ~ 175°C
SDS120J020H3-ISATH DIODE 1200V-20A TO247-2L Luminus Devices Inc.	297	-	询价单	数据表	Sanan TO247	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	1.5 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 1200 V	1565pF @ 0V, 1MHz	63A	-	-	Through Hole	TO-247-2L	-55°C ~ 175°C
SDS120J030H3-ISATH DIODE 1200V-30A TO247-2L Luminus Devices Inc.	133	-	询价单	数据表	Sanan TO247	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	1.5 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	72 µA @ 1200 V	2546pF @ 0V, 1MHz	95A	-	-	Through Hole	TO-247-2L	-55°C ~ 175°C
SDS065J050H3-ISATH DIODE 650V-50A TO247-2L Luminus Devices Inc.	148	-	询价单	数据表	Sanan TO247	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.5 V @ 50 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 650 V	2970pF @ 0V, 1MHz	114A	-	-	Through Hole	TO-247-2L	-55°C ~ 175°C
SDS170J025H5-ISATH DIODE 1700V-25A TO247-2L Luminus Devices Inc.	150	-	询价单	数据表	-	TO-247-2	Tube	Active	-	1700 V	-	-	-	-	-	25A	-	-	Through Hole	TO-247-2L	-
SDS120J040H3-ISATH DIODE 1200V-40A TO247-2L Luminus Devices Inc.	135	-	询价单	数据表	Sanan TO247	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	1.6 V @ 40 A	No Recovery Time > 500mA (Io)	0 ns	96 µA @ 1200 V	2648pF @ 0V, 1MHz	98A	-	-	Through Hole	TO-247-2L	-55°C ~ 175°C

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