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二极管阵列

制造商	系列	封装/外壳	包装	产品状态	二极管配置	技术	电流 - 平均整流 (Io)（每个二极管）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电压 - 直流反向 (Vr)（最大值）	工作温度 - 结点	等级	认证	安装类型	供应商设备封装
Alpha & Omega Semiconductor Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED Bourns Inc. Bruckewell Central Semiconductor Corp Comchip Technology Diodes Incorporated Diotec Semiconductor EVVO Fairchild Semiconductor fastSiC Flip Electronics GeneSiC Semiconductor Good-Ark Semiconductor Harris Corporation HY Electronic (Cayman) Limited Infineon Technologies Inventchip IXYS KYOCERA AVX Linear Integrated Systems, Inc. Littelfuse Inc. Luminus Devices Inc. MDD Micro Commercial Co Microchip Technology Microsemi Corporation Motorola Nexperia USA Inc. NextGen Components Group NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. Phoenix Contact Power Integrations Powerex Inc. Quest Semi Renesas ROHM Semiconductor Sanken Electric USA Inc. SanRex Corporation Sanyo SemiQ Semtech Corporation Sensata-Crydom Shenzhen Slkormicro Semicon Co., Ltd. Siemens SMC Diode Solutions STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Toshiba Semiconductor and Storage TT Electronics/Optek Technology Unitrode Venkel Vishay Vishay General Semiconductor - Diodes Division Vishay Semiconductor Opto Division WAGO Corporation WeEn Semiconductors Weidmuller Wolfspeed, Inc.

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	二极管配置	技术	电流 - 平均整流 (Io)（每个二极管）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电压 - 直流反向 (Vr)（最大值）	工作温度 - 结点	等级	认证	安装类型	供应商设备封装
PCDH20120CCG1_T0_00601 DIODE ARR SIC 1200V 10A TO-247AD Panjit International Inc.	1,170	-	询价单	数据表	-	TO-247-3	Tube	Active	1 Pair Common Cathode	SiC (Silicon Carbide) Schottky	10A (DC)	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	1200 V	-55°C ~ 175°C	-	-	Through Hole	TO-247AD
IDW20S120FKSA1 DIODE ARR SIC 1200V 10A PGTO2473 Infineon Technologies	4,942	-	询价单	数据表	CoolSiC™+	TO-247-3	Tube	Obsolete	1 Pair Common Cathode	SiC (Silicon Carbide) Schottky	10A (DC)	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	-	240 µA @ 1200 V	1200 V	-55°C ~ 175°C	-	-	Through Hole	PG-TO247-3
IV1D12020T3 DIODE ARR SIC 1200V 30A TO247-3 Inventchip	120	-	询价单	数据表	-	TO-247-3	Tube	Active	1 Pair Common Cathode	SiC (Silicon Carbide) Schottky	30A (DC)	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	1200 V	-55°C ~ 175°C	-	-	Through Hole	TO-247-3
89CNQ150 DIODE MODULE SCHOT 150V 40A PRM2 SMC Diode Solutions	111	-	询价单	数据表	-	PRM2	Bulk	Active	1 Pair Common Cathode	Schottky	40A	1.14 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5 mA @ 150 V	150 V	-55°C ~ 175°C	-	-	Chassis Mount	PRM2
PCDH30120CCG1_T0_00601 DIODE ARR SIC 1200V 15A TO-247AD Panjit International Inc.	1,500	-	询价单	数据表	-	TO-247-3	Tube	Active	1 Pair Common Cathode	SiC (Silicon Carbide) Schottky	15A (DC)	1.7 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	140 µA @ 1200 V	1200 V	-55°C ~ 175°C	-	-	Through Hole	TO-247AD
FFSH40120ADN-F155 DIODE ARR SIC 1200V 20A TO247-3 onsemi	685	-	询价单	数据表	-	TO-247-3	Bulk	Active	1 Pair Common Cathode	SiC (Silicon Carbide) Schottky	20A	1.75 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 1200 V	1200 V	-55°C ~ 175°C	-	-	Through Hole	TO-247-3
VS-U5FX60FA60 DIODE MODULE GP 600V 30A SOT-227 Vishay General Semiconductor - Diodes Division	154	-	询价单	数据表	FRED Pt®	SOT-227-4, miniBLOC	Tube	Active	2 Independent	Standard	30A (DC)	2.1 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	57 ns	30 µA @ 600 V	600 V	-55°C ~ 175°C	-	-	Chassis Mount	SOT-227
VS-U5FX120FA60 DIODE MODULE GP 600V 60A SOT-227 Vishay General Semiconductor - Diodes Division	154	-	询价单	数据表	FRED Pt®	SOT-227-4, miniBLOC	Tube	Active	2 Independent	Standard	60A (DC)	2.2 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	63 ns	40 µA @ 600 V	600 V	-55°C ~ 175°C	-	-	Chassis Mount	SOT-227
VS-U5FH150FA60 DIODE MODULE GP 600V 75A SOT-227 Vishay General Semiconductor - Diodes Division	160	-	询价单	数据表	FRED Pt®	SOT-227-4, miniBLOC	Tube	Active	2 Independent	Standard	75A (DC)	1.7 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	70 ns	50 µA @ 600 V	600 V	-55°C ~ 175°C	-	-	Chassis Mount	SOT-227
VS-U5FX150FA60 DIODE MODULE GP 600V 75A SOT-227 Vishay General Semiconductor - Diodes Division	126	-	询价单	数据表	FRED Pt®	SOT-227-4, miniBLOC	Tube	Active	2 Independent	Standard	75A (DC)	2.2 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	65 ns	50 µA @ 600 V	600 V	-55°C ~ 175°C	-	-	Chassis Mount	SOT-227
PCDH40120CCG1_T0_00601 DIODE ARR SIC 1200V 20A TO-247AD Panjit International Inc.	1,500	-	询价单	数据表	-	TO-247-3	Tube	Active	1 Pair Common Cathode	SiC (Silicon Carbide) Schottky	20A (DC)	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	180 µA @ 1200 V	1200 V	-55°C ~ 175°C	-	-	Through Hole	TO-247AD
IV1D12040U2 DIODE ARR SIC 1200V 102A TO2472 Inventchip	120	-	询价单	数据表	-	TO-247-2	Tube	Active	1 Pair Common Cathode	SiC (Silicon Carbide) Schottky	102A (DC)	1.8 V @ 40 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	1200 V	-55°C ~ 175°C	-	-	Through Hole	TO-247-2
1N4148UBCA/TR DIODE ARRAY GP 75V 200MA UB Microchip Technology	200	-	询价单	数据表	-	3-SMD, No Lead	Tape & Reel (TR)	Active	1 Pair Common Anode	Standard	200mA	1.2 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	500 nA @ 75 V	75 V	-65°C ~ 200°C	-	-	Surface Mount	UB
1N4148UBD DIODE ARRAY GP 75V 200MA UB Microchip Technology	151	-	询价单	数据表	-	3-SMD, No Lead	Bulk	Active	1 Pair Series Connection	Standard	200mA	1.2 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	500 nA @ 75 V	75 V	-65°C ~ 200°C	-	-	Surface Mount	UB
RJS6004WDPK-00#T0 DIODE ARRAY SIC 600V 10A TO-3P Renesas Electronics Corporation	750	-	询价单	数据表	-	TO-220-3 Full Pack	Bulk	Active	1 Pair Common Cathode	SiC (Silicon Carbide) Schottky	10A (DC)	1.8 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	15 ns	10 µA @ 600 V	600 V	-55°C ~ 150°C	-	-	Through Hole	TO-3P
GB2X50MPS12-227 DIODE MOD SIC 1200V 93A SOT-227 GeneSiC Semiconductor	248	-	询价单	数据表	SiC Schottky MPS™	SOT-227-4, miniBLOC	Tube	Obsolete	2 Independent	SiC (Silicon Carbide) Schottky	93A (DC)	1.8 V @ 50 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 1200 V	1200 V	-55°C ~ 175°C	-	-	Chassis Mount	SOT-227
DCG45X1200NA DIODE MOD SIC 1200V 22A SOT227B IXYS	196	-	询价单	数据表	-	SOT-227-4, miniBLOC	Tube	Obsolete	2 Independent	SiC (Silicon Carbide) Schottky	22A	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	1200 V	-40°C ~ 175°C	-	-	Chassis Mount	SOT-227B
GB2X50MPS17-227 DIODE MOD SIC 1700V 136A SOT-227 GeneSiC Semiconductor	79	-	询价单	数据表	SiC Schottky MPS™	SOT-227-4, miniBLOC	Tube	Obsolete	2 Independent	SiC (Silicon Carbide) Schottky	136A (DC)	1.8 V @ 50 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1700 V	1700 V	-55°C ~ 175°C	-	-	Chassis Mount	SOT-227
MBRT20060R DIODE MOD SCHOTT 60V 100A 3TOWER GeneSiC Semiconductor	67	-	询价单	数据表	-	Three Tower	Bulk	Active	1 Pair Common Anode	Schottky	100A	800 mV @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 20 V	60 V	-55°C ~ 150°C	-	-	Chassis Mount	Three Tower
MUR20020CT DIODE MODULE GP 200V 100A 2TOWER GeneSiC Semiconductor	48	-	询价单	数据表	-	Twin Tower	Bulk	Active	1 Pair Common Cathode	Standard	100A	1.3 V @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	25 µA @ 50 V	200 V	-55°C ~ 150°C	-	-	Chassis Mount	Twin Tower

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