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二极管阵列

制造商 系列 封装/外壳 包装 产品状态 二极管配置 技术 电流 - 平均整流 (Io)(每个二极管) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电压 - 直流反向 (Vr)(最大值) 工作温度 - 结点 等级 认证 安装类型 供应商设备封装

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 二极管配置 技术 电流 - 平均整流 (Io)(每个二极管) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电压 - 直流反向 (Vr)(最大值) 工作温度 - 结点 等级 认证 安装类型 供应商设备封装
DPAD100 TO-72 4L

DPAD100 TO-72 4L

DIODE ARRAY GP 45V 50MA TO-72-4

Linear Integrated Systems, Inc.

498 -
DPAD100 TO-72 4L

数据表

DPAD TO-206AF, TO-72-4 Metal Can Bulk Active 2 Independent Standard 50mA 1.5 V @ 1 mA Small Signal =< 200mA (Io), Any Speed - 100 pA @ 20 V 45 V -55°C ~ 150°C - - Through Hole TO-72-4
UC1612J

UC1612J

DIODE ARRAY SCHOTTKY 8-SOIC

Texas Instruments

228 -
UC1612J

数据表

- 8-SOIC (0.154", 3.90mm Width) Bulk Active - Schottky - 50 V @ 1 A - - - - -55°C ~ 150°C - - Surface Mount 8-SOIC
FFSH1665ADN-F155

FFSH1665ADN-F155

DIODE ARRAY SIC 650V TO247-3

onsemi

191 -
FFSH1665ADN-F155

数据表

- TO-247-3 Tube Active - SiC (Silicon Carbide) Schottky - - No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 650 V -55°C ~ 175°C - - Through Hole TO-247-3
FFSH15120ADN-F155

FFSH15120ADN-F155

DIODE ARRAY SIC 1200V 8A TO247-3

onsemi

523 -
FFSH15120ADN-F155

数据表

- TO-247-3 Tube Active 1 Pair Common Cathode SiC (Silicon Carbide) Schottky 8A (DC) 1.75 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 1200 V 1200 V -55°C ~ 175°C - - Through Hole TO-247-3
PCDH2065CCG1_T0_00601

PCDH2065CCG1_T0_00601

DIODE ARR SIC 650V 10A TO-247AD

Panjit International Inc.

1,466 -
PCDH2065CCG1_T0_00601

数据表

- TO-247-3 Tube Active 1 Pair Common Cathode SiC (Silicon Carbide) Schottky 10A (DC) 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 70 µA @ 650 V 650 V -55°C ~ 175°C - - Through Hole TO-247AD
FFSH20120ADN-F155

FFSH20120ADN-F155

DIODE ARR SIC 1200V 10A TO247-3

onsemi

335 -
FFSH20120ADN-F155

数据表

- TO-247-3 Tube Active 1 Pair Common Cathode SiC (Silicon Carbide) Schottky 10A (DC) 1.75 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 1200 V 1200 V -55°C ~ 175°C - - Through Hole TO-247-3
UC3611N

UC3611N

DIODE ARRAY SCHOTT 50V 3A 8-PDIP

Texas Instruments

142 -
UC3611N

数据表

- 8-DIP (0.300", 7.62mm) Bulk Active 4 Independent Schottky 3A (DC) 1.2 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 20 ns 100 µA @ 40 V 50 V -0°C ~ 70°C - - Through Hole 8-PDIP
FFSH10120ADN-F155

FFSH10120ADN-F155

DIODE ARR SIC 1200V 10A TO247-3

onsemi

173 -
FFSH10120ADN-F155

数据表

- TO-247-3 Tube Obsolete 1 Pair Common Cathode SiC (Silicon Carbide) Schottky 10A (DC) - No Recovery Time > 500mA (Io) 0 ns - 1200 V 175°C (Max) - - Through Hole TO-247-3
DSSK60-02A

DSSK60-02A

DIODE ARR SCHOT 200V 30A TO247AD

IXYS

874 -
DSSK60-02A

数据表

- TO-247-3 Tube Active 1 Pair Common Cathode Schottky 30A 850 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 2 mA @ 200 V 200 V -55°C ~ 175°C - - Through Hole TO-247AD
STPSC2006CW

STPSC2006CW

DIODE ARRAY SIC 600V 10A TO-247

STMicroelectronics

708 -
STPSC2006CW

数据表

- TO-247-3 Tube Active 1 Pair Common Cathode SiC (Silicon Carbide) Schottky 10A 1.7 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 150 µA @ 600 V 600 V -40°C ~ 175°C - - Through Hole TO-247
FFSH4065ADN-F155

FFSH4065ADN-F155

DIODE ARRAY SIC 650V 22A TO247-3

onsemi

336 -
FFSH4065ADN-F155

数据表

- TO-247-3 Tube Active 1 Pair Common Cathode SiC (Silicon Carbide) Schottky 22A (DC) 1.75 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 650 V -55°C ~ 175°C - - Through Hole TO-247-3
NDSH20120CDN

NDSH20120CDN

DIODE ARR SIC 1200V 10A TO247-3

onsemi

403 -
NDSH20120CDN

数据表

- TO-247-3 Tube Active 1 Pair Common Cathode SiC (Silicon Carbide) Schottky 10A 1.75 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 1200 V -55°C ~ 175°C - - Through Hole TO-247-3
NDSH30120CDN

NDSH30120CDN

DIODE ARR SIC 1200V 15A TO247-3

onsemi

450 -
NDSH30120CDN

数据表

- TO-247-3 Tube Active 1 Pair Common Cathode SiC (Silicon Carbide) Schottky 15A 1.75 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 1200 V -55°C ~ 175°C - - Through Hole TO-247-3
MBRP20035L

MBRP20035L

DIODE SCHOTTKY 35V 200A

onsemi

6,205 -
MBRP20035L

数据表

* - Bulk Obsolete - - - - - - - - - - - - -
STTH8003CY

STTH8003CY

DIODE ARRAY GP 300V 40A MAX247

STMicroelectronics

506 -
STTH8003CY

数据表

Q TO-247-3 Tube Obsolete 1 Pair Common Cathode Standard 40A 1.25 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 80 µA @ 300 V 300 V 175°C (Max) Automotive AEC-Q101 Through Hole MAX247™
PCDH3065CCG1_T0_00601

PCDH3065CCG1_T0_00601

DIODE ARR SIC 650V 15A TO-247AD

Panjit International Inc.

1,470 -
PCDH3065CCG1_T0_00601

数据表

- TO-247-3 Tube Active 1 Pair Common Cathode SiC (Silicon Carbide) Schottky 15A (DC) 1.7 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 650 V -55°C ~ 175°C - - Through Hole TO-247AD
FFSH30120ADN-F155

FFSH30120ADN-F155

DIODE ARR SIC 1200V 15A TO247-3

onsemi

1,021 -
FFSH30120ADN-F155

数据表

- TO-247-3 Tube Active 1 Pair Common Cathode SiC (Silicon Carbide) Schottky 15A (DC) 1.75 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 1200 V 1200 V -55°C ~ 175°C - - Through Hole TO-247-3
MBRP20030CTL

MBRP20030CTL

DIODE MOD SCHOTT 30V POWERTAP II

onsemi

4,432 -
MBRP20030CTL

数据表

SWITCHMODE™ Powertap II Tray Obsolete 1 Pair Common Cathode Schottky 100A 600 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 30 V 30 V - - - Chassis Mount PowerTap II
PCDH4065CCG1_T0_00601

PCDH4065CCG1_T0_00601

DIODE ARR SIC 650V 20A TO-247AD

Panjit International Inc.

1,440 -
PCDH4065CCG1_T0_00601

数据表

- TO-247-3 Tube Active 1 Pair Common Cathode SiC (Silicon Carbide) Schottky 20A (DC) 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 120 µA @ 650 V 650 V -55°C ~ 175°C - - Through Hole TO-247AD
UC1611L

UC1611L

DIODE ARRAY SCHOTT 50V 1A 20LCCC

Unitrode

1,163 -
UC1611L

数据表

- 20-CLCC Bulk Active 4 Independent Schottky 1A (DC) 1.2 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 20 ns 100 µA @ 40 V 50 V -55°C ~ 125°C - - Surface Mount 20-LCCC (8.89x8.89)
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