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二极管阵列

制造商	系列	封装/外壳	包装	产品状态	二极管配置	技术	电流 - 平均整流 (Io)（每个二极管）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电压 - 直流反向 (Vr)（最大值）	工作温度 - 结点	等级	认证	安装类型	供应商设备封装
Alpha & Omega Semiconductor Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED Bourns Inc. Bruckewell Central Semiconductor Corp Comchip Technology Diodes Incorporated Diotec Semiconductor EVVO Fairchild Semiconductor fastSiC Flip Electronics GeneSiC Semiconductor Good-Ark Semiconductor Harris Corporation HY Electronic (Cayman) Limited Infineon Technologies Inventchip IXYS KYOCERA AVX Linear Integrated Systems, Inc. Littelfuse Inc. Luminus Devices Inc. MDD Micro Commercial Co Microchip Technology Microsemi Corporation Motorola Nexperia USA Inc. NextGen Components Group NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. Phoenix Contact Power Integrations Powerex Inc. Quest Semi Renesas ROHM Semiconductor Sanken Electric USA Inc. SanRex Corporation Sanyo SemiQ Semtech Corporation Sensata-Crydom Shenzhen Slkormicro Semicon Co., Ltd. Siemens SMC Diode Solutions STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Toshiba Semiconductor and Storage TT Electronics/Optek Technology Unitrode Venkel Vishay Vishay General Semiconductor - Diodes Division Vishay Semiconductor Opto Division WAGO Corporation WeEn Semiconductors Weidmuller Wolfspeed, Inc.

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	二极管配置	技术	电流 - 平均整流 (Io)（每个二极管）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电压 - 直流反向 (Vr)（最大值）	工作温度 - 结点	等级	认证	安装类型	供应商设备封装
PCDH4065CCGB_T0_00601 DIODE ARR SIC 650V 20A TO-247AD Panjit International Inc.	1,475	-	询价单	数据表	-	TO-247-3	-	Active	1 Pair Common Cathode	SiC (Silicon Carbide) Schottky	20A	1.6 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	650 V	-55°C ~ 175°C	-	-	Through Hole	TO-247AD
VS-U5FH60FA120 DIODE MODULE GP 1200V 30A SOT227 Vishay General Semiconductor - Diodes Division	116	-	询价单	数据表	FRED Pt®	SOT-227-4, miniBLOC	Tube	Active	2 Independent	Standard	30A (DC)	2.5 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	54 ns	60 µA @ 1200 V	1200 V	-55°C ~ 175°C	-	-	Chassis Mount	SOT-227
VS-U5FH120FA60 DIODE MODULE GP 600V 60A SOT-227 Vishay General Semiconductor - Diodes Division	130	-	询价单	数据表	FRED Pt®	SOT-227-4, miniBLOC	Tube	Active	2 Independent	Standard	60A (DC)	1.7 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	67 ns	40 µA @ 600 V	600 V	-55°C ~ 175°C	-	-	Chassis Mount	SOT-227
113CNQ100SL DIODE ARR SCHOTT 100V 55A PRM2SL SMC Diode Solutions	190	-	询价单	数据表	-	PRM2-SL	Box	Active	1 Pair Common Cathode	Schottky	55A	810 mV @ 55 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 100 V	100 V	-55°C ~ 175°C	-	-	Surface Mount	PRM2-SL
PCDH30120CCGB_T0_00601 DIODE ARR SIC 1200V 15A TO-247AD Panjit International Inc.	1,500	-	询价单	数据表	-	TO-247-3	-	Active	1 Pair Common Cathode	SiC (Silicon Carbide) Schottky	15A	1.7 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	1200 V	-55°C ~ 175°C	-	-	Through Hole	TO-247AD
VS-U5FX60FA120 DIODE MODULE GP 1200V 30A SOT227 Vishay General Semiconductor - Diodes Division	134	-	询价单	数据表	FRED Pt®	SOT-227-4, miniBLOC	Tube	Active	2 Independent	Standard	30A (DC)	3.57 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	41 ns	60 µA @ 1200 V	1200 V	-55°C ~ 175°C	-	-	Chassis Mount	SOT-227
SDS120J060G3-ISATH DIODE ARR SIC 1200V 95A TO247-3L Luminus Devices Inc.	109	-	询价单	数据表	Sanan TO247	TO-247-3	Tube	Active	1 Pair Common Cathode	SiC (Silicon Carbide) Schottky	95A	1.5 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	72 µA @ 1200 V	1200 V	-55°C ~ 175°C	-	-	Through Hole	TO-247-3L
VS-U5FX300FA60 DIODE MODULE GP 600V 150A SOT227 Vishay General Semiconductor - Diodes Division	119	-	询价单	数据表	FRED Pt®	SOT-227-4, miniBLOC	Tube	Active	2 Independent	Standard	150A (DC)	2.2 V @ 150 A	Fast Recovery =< 500ns, > 200mA (Io)	72 ns	100 µA @ 600 V	600 V	-55°C ~ 175°C	-	-	Chassis Mount	SOT-227
PCDH40120CCGB_T0_00601 DIODE ARR SIC 1200V 20A TO-247AD Panjit International Inc.	1,500	-	询价单	数据表	-	TO-247-3	-	Active	1 Pair Common Cathode	SiC (Silicon Carbide) Schottky	20A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	1200 V	-55°C ~ 175°C	-	-	Through Hole	TO-247AD
VS-SC40FA120 DIODE MOD SIC 1200V 20A SOT-227 Vishay General Semiconductor - Diodes Division	150	-	询价单	数据表	-	SOT-227-4, miniBLOC	Tube	Active	2 Independent	SiC (Silicon Carbide) Schottky	20A	1.58 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 1200 V	1200 V	-55°C ~ 175°C	-	-	Chassis Mount	SOT-227
VS-SC40FA65 DIODE MOD SIC 650V 20A SOT-227 Vishay	152	-	询价单	数据表	-	SOT-227-4, miniBLOC	Strip	Active	2 Independent	SiC (Silicon Carbide) Schottky	20A	1.55 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	650 V	-55°C ~ 175°C	-	-	Chassis Mount	SOT-227
VS-SC80FA65 DIODE MOD SIC 650V 40A SOT-227 Vishay	160	-	询价单	数据表	-	SOT-227-4, miniBLOC	Strip	Active	2 Independent	SiC (Silicon Carbide) Schottky	40A	1.58 V @ 40 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 650 V	650 V	-55°C ~ 175°C	-	-	Chassis Mount	SOT-227
VS-SC80FA120 DIODE MOD SIC 1200V 40A SOT-227 Vishay General Semiconductor - Diodes Division	160	-	询价单	数据表	-	SOT-227-4, miniBLOC	Tube	Active	2 Independent	SiC (Silicon Carbide) Schottky	40A	1.58 V @ 40 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 1200 V	1200 V	-55°C ~ 175°C	-	-	Chassis Mount	SOT-227
VS-SC120FA65 DIODE MOD SIC 650V 60A SOT-227 Vishay	160	-	询价单	数据表	-	SOT-227-4, miniBLOC	Strip	Active	2 Independent	SiC (Silicon Carbide) Schottky	60A	1.59 V @ 60 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 650 V	650 V	-55°C ~ 175°C	-	-	Chassis Mount	SOT-227
VS-SC120FA120 DIODE MOD SIC 1200V 60A SOT-227 Vishay General Semiconductor - Diodes Division	157	-	询价单	数据表	-	SOT-227-4, miniBLOC	Tube	Active	2 Independent	SiC (Silicon Carbide) Schottky	60A	1.59 V @ 60 A	No Recovery Time > 500mA (Io)	0 ns	180 µA @ 1200 V	1200 V	-55°C ~ 175°C	-	-	Chassis Mount	SOT-227
VS-SC160FA120 DIODE MOD SIC 1200V 80A SOT-227 Vishay General Semiconductor - Diodes Division	158	-	询价单	数据表	-	SOT-227-4, miniBLOC	Tube	Active	2 Independent	SiC (Silicon Carbide) Schottky	80A	1.6 V @ 80 A	No Recovery Time > 500mA (Io)	0 ns	240 µA @ 1200 V	1200 V	-55°C ~ 175°C	-	-	Chassis Mount	SOT-227
VS-SC200FA65 DIODE MOD SIC 650V 100A SOT-227 Vishay	144	-	询价单	数据表	-	SOT-227-4, miniBLOC	Strip	Active	2 Independent	SiC (Silicon Carbide) Schottky	100A	1.6 V @ 100 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	650 V	-55°C ~ 175°C	-	-	Chassis Mount	SOT-227
VS-SC160FA65 DIODE MOD SIC 650V 80A SOT-227 Vishay	142	-	询价单	数据表	-	SOT-227-4, miniBLOC	Strip	Active	2 Independent	SiC (Silicon Carbide) Schottky	80A	1.59 V @ 80 A	No Recovery Time > 500mA (Io)	0 ns	1.6 µA @ 650 V	650 V	-55°C ~ 175°C	-	-	Chassis Mount	SOT-227
VS-SC200FA120 DIODE MOD SIC 1200V 100A SOT-227 Vishay General Semiconductor - Diodes Division	160	-	询价单	数据表	-	SOT-227-4, miniBLOC	Tube	Active	2 Independent	SiC (Silicon Carbide) Schottky	100A	1.61 V @ 100 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 1200 V	1200 V	-55°C ~ 175°C	-	-	Chassis Mount	SOT-227
VS-SC240FA120 DIODE MOD SIC 1200V 120A SOT-227 Vishay General Semiconductor - Diodes Division	135	-	询价单	数据表	-	SOT-227-4, miniBLOC	Tube	Active	2 Independent	SiC (Silicon Carbide) Schottky	120A	1.63 V @ 120 A	No Recovery Time > 500mA (Io)	0 ns	5.69 µA @ 1200 V	1200 V	-55°C ~ 175°C	-	-	Chassis Mount	SOT-227

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