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栅极驱动器

制造商 系列 封装/外壳 包装 产品状态 可编程 驱动配置 驱动器数量 门类型 电压 - 电源 供应商设备封装 逻辑电压 - VIL, VIH 电流 - 峰值输出(源,吸) 通道类型 输入类型 高侧电压 - 最大值(自举) 安装类型 上升/下降时间(典型值) 认证 工作温度 等级

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 可编程 驱动配置 驱动器数量 门类型 电压 - 电源 供应商设备封装 逻辑电压 - VIL, VIH 电流 - 峰值输出(源,吸) 通道类型 输入类型 高侧电压 - 最大值(自举) 安装类型 上升/下降时间(典型值) 认证 工作温度 等级
IRS2304PBF

IRS2304PBF

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies

0 -
IRS2304PBF

数据表

- 8-DIP (0.300", 7.62mm) Tube Obsolete Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 8-PDIP 0.7V, 2.3V 290mA, 600mA Independent Non-Inverting 600 V Through Hole 70ns, 35ns - -40°C ~ 150°C (TJ) -
IRS2186PBF

IRS2186PBF

IC GATE DRVR HI/LOW SIDE 8DIP

Infineon Technologies

0 -
IRS2186PBF

数据表

- 8-DIP (0.300", 7.62mm) Tube Obsolete Not Verified High-Side or Low-Side 2 IGBT, N-Channel MOSFET 10V ~ 20V 8-PDIP 0.8V, 2.5V 4A, 4A Independent Non-Inverting 600 V Through Hole 22ns, 18ns - -40°C ~ 150°C (TJ) -
IRS2001PBF

IRS2001PBF

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies

0 -
IRS2001PBF

数据表

- 8-DIP (0.300", 7.62mm) Tube Obsolete Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 8-PDIP 0.8V, 2.5V 290mA, 600mA Independent Non-Inverting 200 V Through Hole 70ns, 35ns - -40°C ~ 150°C (TJ) -
IRS2101PBF

IRS2101PBF

IC GATE DRVR HI/LOW SIDE 8DIP

Infineon Technologies

0 -
IRS2101PBF

数据表

- 8-DIP (0.300", 7.62mm) Tube Obsolete Not Verified High-Side or Low-Side 2 IGBT, N-Channel MOSFET 10V ~ 20V 8-PDIP 0.8V, 2.5V 290mA, 600mA Independent Non-Inverting 600 V Through Hole 70ns, 35ns - -40°C ~ 150°C (TJ) -
IRS2103PBF

IRS2103PBF

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies

0 -
IRS2103PBF

数据表

- 8-DIP (0.300", 7.62mm) Tube Discontinued at Digi-Key Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 8-PDIP 0.8V, 2.5V 290mA, 600mA Independent Inverting, Non-Inverting 600 V Through Hole 70ns, 35ns - -40°C ~ 150°C (TJ) -
IRS2118PBF

IRS2118PBF

IC GATE DRVR HIGH-SIDE 8DIP

Infineon Technologies

0 -
IRS2118PBF

数据表

- 8-DIP (0.300", 7.62mm) Tube Obsolete Not Verified High-Side 1 IGBT, N-Channel MOSFET 10V ~ 20V 8-PDIP 6V, 9.5V 290mA, 600mA Single Inverting 600 V Through Hole 75ns, 35ns - -40°C ~ 150°C (TJ) -
IRS2118SPBF

IRS2118SPBF

IC GATE DRVR HIGH-SIDE 8SOIC

Infineon Technologies

0 -
IRS2118SPBF

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Obsolete Not Verified High-Side 1 IGBT, N-Channel MOSFET 10V ~ 20V 8-SOIC 6V, 9.5V 290mA, 600mA Single Inverting 600 V Surface Mount 75ns, 35ns - -40°C ~ 150°C (TJ) -
IRS2117SPBF

IRS2117SPBF

IC GATE DRVR HIGH-SIDE 8SOIC

Infineon Technologies

0 -
IRS2117SPBF

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Obsolete Not Verified High-Side 1 IGBT, N-Channel MOSFET 10V ~ 20V 8-SOIC 6V, 9.5V 290mA, 600mA Single Non-Inverting 600 V Surface Mount 75ns, 35ns - -40°C ~ 150°C (TJ) -
IRS2003PBF

IRS2003PBF

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies

0 -
IRS2003PBF

数据表

- 8-DIP (0.300", 7.62mm) Tube Obsolete Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 8-PDIP 0.8V, 2.5V 290mA, 600mA Independent Inverting, Non-Inverting 200 V Through Hole 70ns, 35ns - -40°C ~ 150°C (TJ) -
IRS2001SPBF

IRS2001SPBF

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies

0 -
IRS2001SPBF

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Obsolete Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 8-SOIC 0.8V, 2.5V 290mA, 600mA Independent Non-Inverting 200 V Surface Mount 70ns, 35ns - -40°C ~ 150°C (TJ) -
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