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栅极驱动器

制造商 系列 封装/外壳 包装 产品状态 可编程 驱动配置 驱动器数量 门类型 电压 - 电源 供应商设备封装 逻辑电压 - VIL, VIH 电流 - 峰值输出(源,吸) 通道类型 输入类型 高侧电压 - 最大值(自举) 安装类型 上升/下降时间(典型值) 认证 工作温度 等级

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 可编程 驱动配置 驱动器数量 门类型 电压 - 电源 供应商设备封装 逻辑电压 - VIL, VIH 电流 - 峰值输出(源,吸) 通道类型 输入类型 高侧电压 - 最大值(自举) 安装类型 上升/下降时间(典型值) 认证 工作温度 等级
IR2308PBF

IR2308PBF

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies

0 -
IR2308PBF

数据表

- 8-DIP (0.300", 7.62mm) Tube Obsolete Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 8-PDIP 0.8V, 2.9V 200mA, 350mA Independent Non-Inverting 600 V Through Hole 150ns, 50ns - -40°C ~ 150°C (TJ) -
IR21064PBF

IR21064PBF

IC GATE DRVR HI/LOW SIDE 14DIP

Infineon Technologies

0 -
IR21064PBF

数据表

- 14-DIP (0.300", 7.62mm) Tube Obsolete Not Verified High-Side or Low-Side 2 IGBT, N-Channel MOSFET 10V ~ 20V 14-DIP 0.8V, 2.9V 200mA, 350mA Independent Non-Inverting 600 V Through Hole 150ns, 50ns - -40°C ~ 150°C (TJ) -
IR2108PBF

IR2108PBF

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies

0 -
IR2108PBF

数据表

- 8-DIP (0.300", 7.62mm) Tube Obsolete Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 8-PDIP 0.8V, 2.9V 200mA, 350mA Independent Non-Inverting 600 V Through Hole 150ns, 50ns - -40°C ~ 150°C (TJ) -
IR21091SPBF

IR21091SPBF

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies

0 -
IR21091SPBF

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Obsolete Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 8-SOIC 0.8V, 2.9V 200mA, 350mA Synchronous Non-Inverting 600 V Surface Mount 150ns, 50ns - -40°C ~ 150°C (TJ) -
IR21091PBF

IR21091PBF

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies

0 -
IR21091PBF

数据表

- 8-DIP (0.300", 7.62mm) Tube Obsolete Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 8-PDIP 0.8V, 2.9V 200mA, 350mA Synchronous Non-Inverting 600 V Through Hole 150ns, 50ns - -40°C ~ 150°C (TJ) -
IR21814PBF

IR21814PBF

IC GATE DRVR HALF-BRIDGE 14DIP

Infineon Technologies

0 -
IR21814PBF

数据表

- 14-DIP (0.300", 7.62mm) Tube Obsolete Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 14-DIP 0.8V, 2.7V 1.9A, 2.3A Independent Non-Inverting 600 V Through Hole 40ns, 20ns - -40°C ~ 150°C (TJ) -
IR2110-1PBF

IR2110-1PBF

IC GATE DRVR HALF-BRIDGE 14DIP

Infineon Technologies

0 -
IR2110-1PBF

数据表

- 14-DIP (0.300", 7.62mm), 13 Leads Tube Obsolete Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 3.3V ~ 20V 14-PDIP 6V, 9.5V 2A, 2A Independent Non-Inverting 500 V Through Hole 25ns, 17ns - -40°C ~ 150°C (TJ) -
98-0334PBF

98-0334PBF

IC GATE DRVR HALF-BRIDGE 44PLCC

Infineon Technologies

0 -
98-0334PBF

数据表

- 44-LCC (J-Lead), 32 Leads Tube Obsolete Not Verified Half-Bridge 6 IGBT, N-Channel MOSFET 10V ~ 20V 44-PLCC, 32 Leads (16.58x16.58) 0.8V, 2.5V 200mA, 350mA 3-Phase Inverting 600 V Surface Mount 125ns, 50ns - -40°C ~ 150°C (TJ) -
IR2112-1PBF

IR2112-1PBF

IC GATE DRVR HI/LOW SIDE 14DIP

Infineon Technologies

0 -
IR2112-1PBF

数据表

- 14-DIP (0.300", 7.62mm), 13 Leads Tube Obsolete Not Verified High-Side or Low-Side 2 IGBT, N-Channel MOSFET 10V ~ 20V 14-PDIP 6V, 9.5V 250mA, 500mA Independent Non-Inverting 600 V Through Hole 80ns, 40ns - -40°C ~ 150°C (TJ) -
98-0119PBF

98-0119PBF

IC GATE DRVR HALF-BRIDGE 16DIP

Infineon Technologies

0 -
98-0119PBF

数据表

- 16-DIP (0.300", 7.62mm), 14 Leads Tube Obsolete Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 3.3V ~ 20V 16-PDIP 6V, 9.5V 2A, 2A Independent Non-Inverting 600 V Through Hole 25ns, 17ns - -40°C ~ 150°C (TJ) -
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