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振荡器

制造商 系列 封装/外壳 包装 产品状态 基谐振器 类型 功能 输出 电压 - 电源 高度 - 安装后(最大值) 频率稳定性 绝对拉力范围(APR) 频率 工作温度 扩展频谱带宽 尺寸 / 尺寸 电流 - 电源(最大值) 供应商设备封装 额定值 安装类型

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 基谐振器 类型 功能 输出 电压 - 电源 高度 - 安装后(最大值) 频率稳定性 绝对拉力范围(APR) 频率 工作温度 扩展频谱带宽 尺寸 / 尺寸 电流 - 电源(最大值) 供应商设备封装 额定值 安装类型
DSC6101CI2B-100.0000T

DSC6101CI2B-100.0000T

MEMS OSC

Microchip Technology

8,799 -
DSC6101CI2B-100.0000T

数据表

DSC61XXB 4-VDFN Strip Active MEMS XO (Standard) Enable/Disable CMOS 1.71V ~ 3.63V 0.035" (0.89mm) ±25ppm - 100 MHz -40°C ~ 85°C - 0.126" L x 0.098" W (3.20mm x 2.50mm) 3mA (Typ) 4-VDFN (3.2x2.5) - Surface Mount
DSC6101CI2B-050.0000T

DSC6101CI2B-050.0000T

MEMS OSC

Microchip Technology

6,744 -
DSC6101CI2B-050.0000T

数据表

DSC61XXB 4-VDFN Strip Active MEMS XO (Standard) Enable/Disable CMOS 1.71V ~ 3.63V 0.035" (0.89mm) ±25ppm - 50 MHz -40°C ~ 85°C - 0.126" L x 0.098" W (3.20mm x 2.50mm) 3mA (Typ) 4-VDFN (3.2x2.5) - Surface Mount
DSC6111CI1B-048.0000T

DSC6111CI1B-048.0000T

MEMS OSC., ULTRA LOW POWER, LVCM

Microchip Technology

5,325 -
DSC6111CI1B-048.0000T

数据表

DSC61XXB 4-VDFN Strip Active MEMS XO (Standard) Standby (Power Down) CMOS 1.71V ~ 3.63V 0.035" (0.89mm) ±50ppm - 48 MHz -40°C ~ 85°C - 0.126" L x 0.098" W (3.20mm x 2.50mm) 3mA (Typ) 4-CDFN (3.2x2.5) - Surface Mount
DSC6111CI1B-014.7456T

DSC6111CI1B-014.7456T

MEMS OSC., ULTRA LOW POWER, LVCM

Microchip Technology

4,391 -
DSC6111CI1B-014.7456T

数据表

DSC61XXB 4-VDFN Strip Active MEMS XO (Standard) Standby (Power Down) CMOS 1.71V ~ 3.63V 0.035" (0.89mm) ±50ppm - 14.7456 MHz -40°C ~ 85°C - 0.126" L x 0.098" W (3.20mm x 2.50mm) 3mA (Typ) 4-CDFN (3.2x2.5) - Surface Mount
DSC6111CI1B-010.0000T

DSC6111CI1B-010.0000T

MEMS OSC., ULTRA LOW POWER, LVCM

Microchip Technology

3,981 -
DSC6111CI1B-010.0000T

数据表

DSC61XXB 4-VDFN Strip Active MEMS XO (Standard) Standby (Power Down) CMOS 1.71V ~ 3.63V 0.035" (0.89mm) ±50ppm - 10 MHz -40°C ~ 85°C - 0.126" L x 0.098" W (3.20mm x 2.50mm) 3mA (Typ) 4-CDFN (3.2x2.5) - Surface Mount
DSC6111CI1B-025.0000T

DSC6111CI1B-025.0000T

MEMS OSC., ULTRA LOW POWER, LVCM

Microchip Technology

4,733 -
DSC6111CI1B-025.0000T

数据表

DSC61XXB 4-VDFN Strip Active MEMS XO (Standard) Standby (Power Down) CMOS 1.71V ~ 3.63V 0.035" (0.89mm) ±50ppm - 25 MHz -40°C ~ 85°C - 0.126" L x 0.098" W (3.20mm x 2.50mm) 3mA (Typ) 4-CDFN (3.2x2.5) - Surface Mount
DSC6003CI2B-250K000T

DSC6003CI2B-250K000T

MEMS OSC

Microchip Technology

9,723 -
DSC6003CI2B-250K000T

数据表

DSC60XX 4-VDFN Strip Active MEMS XO (Standard) Enable/Disable CMOS 1.71V ~ 3.63V 0.035" (0.90mm) ±25ppm - 250 kHz -40°C ~ 85°C - 0.126" L x 0.098" W (3.20mm x 2.50mm) 1.3mA (Typ) 4-VDFN (3.2x2.5) AEC-Q100 Surface Mount
DSC6111CI1B-020.0000T

DSC6111CI1B-020.0000T

MEMS OSC., ULTRA LOW POWER, LVCM

Microchip Technology

8,418 -
DSC6111CI1B-020.0000T

数据表

DSC61XXB 4-VDFN Strip Active MEMS XO (Standard) Standby (Power Down) CMOS 1.71V ~ 3.63V 0.035" (0.89mm) ±50ppm - 20 MHz -40°C ~ 85°C - 0.126" L x 0.098" W (3.20mm x 2.50mm) 3mA (Typ) 4-CDFN (3.2x2.5) - Surface Mount
DSC6111CI1B-024.0000T

DSC6111CI1B-024.0000T

MEMS OSC., ULTRA LOW POWER, LVCM

Microchip Technology

2,919 -
DSC6111CI1B-024.0000T

数据表

DSC61XXB 4-VDFN Strip Active MEMS XO (Standard) Standby (Power Down) CMOS 1.71V ~ 3.63V 0.035" (0.89mm) ±50ppm - 24 MHz -40°C ~ 85°C - 0.126" L x 0.098" W (3.20mm x 2.50mm) 3mA (Typ) 4-CDFN (3.2x2.5) - Surface Mount
DSC6101CI3B-025.1658T

DSC6101CI3B-025.1658T

MEMS OSC

Microchip Technology

3,344 -
DSC6101CI3B-025.1658T

数据表

DSC61XXB 4-VDFN Strip Active MEMS XO (Standard) Enable/Disable CMOS 1.71V ~ 3.63V 0.035" (0.89mm) ±20ppm - 25.1658 MHz -40°C ~ 85°C - 0.126" L x 0.098" W (3.20mm x 2.50mm) 3mA (Typ) 4-VDFN (3.2x2.5) - Surface Mount
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