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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 可编程 存储类型 技术 存储容量 存储组织 供应商设备封装 存储接口 时钟频率 存储格式 写周期时间 - 字,页 访问时间 安装类型 电压 - 电源 认证 工作温度 等级
71T75602S100BG8

71T75602S100BG8

IC SRAM 18MBIT PAR 119PBGA

Renesas Electronics Corporation

0 -
71T75602S100BG8

数据表

- 119-BGA Tape & Reel (TR) Obsolete Not Verified Volatile SRAM - Synchronous, SDR (ZBT) 18Mbit 512K x 36 119-PBGA (14x22) Parallel 100 MHz SRAM - 5 ns Surface Mount 2.375V ~ 2.625V - 0°C ~ 70°C (TA) -
71T75602S100BGG

71T75602S100BGG

IC SRAM 18MBIT PAR 119PBGA

Renesas Electronics Corporation

0 -
71T75602S100BGG

数据表

- 119-BGA Tray Obsolete Not Verified Volatile SRAM - Synchronous, SDR (ZBT) 18Mbit 512K x 36 119-PBGA (14x22) Parallel 100 MHz SRAM - 5 ns Surface Mount 2.375V ~ 2.625V - 0°C ~ 70°C (TA) -
71T75602S100BGG8

71T75602S100BGG8

IC SRAM 18MBIT PAR 119PBGA

Renesas Electronics Corporation

0 -
71T75602S100BGG8

数据表

- 119-BGA Tape & Reel (TR) Obsolete Not Verified Volatile SRAM - Synchronous, SDR (ZBT) 18Mbit 512K x 36 119-PBGA (14x22) Parallel 100 MHz SRAM - 5 ns Surface Mount 2.375V ~ 2.625V - 0°C ~ 70°C (TA) -
IS43LQ16256BL-053BLI

IS43LQ16256BL-053BLI

4G, 0.57-0.65V/1.06-1.17/1.70-1.

ISSI, Integrated Silicon Solution Inc

0 -
IS43LQ16256BL-053BLI

数据表

- 200-VFBGA Tray Active - Volatile SDRAM - Mobile LPDDR4X 4Gbit 256M x 16 200-VFBGA (10x14.5) LVSTL 1.867 GHz DRAM - - Surface Mount 1.06V ~ 1.17V, 1.7V ~ 1.95V - -40°C ~ 95°C (TC) -
71T75602S100BGGI

71T75602S100BGGI

IC SRAM 18MBIT PAR 119PBGA

Renesas Electronics Corporation

0 -
71T75602S100BGGI

数据表

- 119-BGA Tray Obsolete Not Verified Volatile SRAM - Synchronous, SDR (ZBT) 18Mbit 512K x 36 119-PBGA (14x22) Parallel 100 MHz SRAM - 5 ns Surface Mount 2.375V ~ 2.625V - -40°C ~ 85°C (TA) -
AT28LV256-25TC

AT28LV256-25TC

IC EEPROM 256KBIT PAR 28TSOP

Microchip Technology

0 -
AT28LV256-25TC

数据表

- 28-TSSOP (0.465", 11.80mm Width) Tray Obsolete Not Verified Non-Volatile EEPROM 256Kbit 32K x 8 28-TSOP Parallel - EEPROM 10ms 250 ns Surface Mount 3V ~ 3.6V - 0°C ~ 70°C (TC) -
71T75602S100BGGI8

71T75602S100BGGI8

IC SRAM 18MBIT PAR 119PBGA

Renesas Electronics Corporation

0 -
71T75602S100BGGI8

数据表

- 119-BGA Tape & Reel (TR) Obsolete Not Verified Volatile SRAM - Synchronous, SDR (ZBT) 18Mbit 512K x 36 119-PBGA (14x22) Parallel 100 MHz SRAM - 5 ns Surface Mount 2.375V ~ 2.625V - -40°C ~ 85°C (TA) -
IS25LP01G-RILE-TR

IS25LP01G-RILE-TR

IC FLASH 1GBIT SPI/QUAD

ISSI, Integrated Silicon Solution Inc

0 -
IS25LP01G-RILE-TR

数据表

- 24-LBGA Tape & Reel (TR) Active Not Verified Non-Volatile FLASH - NOR (SLC) 1Gbit 128M x 8 24-LFBGA (6x8) SPI - Quad I/O, QPI, DTR 133 MHz FLASH 50µs, 1ms 8 ns Surface Mount 2.7V ~ 3.6V AEC-Q100 -40°C ~ 105°C (TA) Automotive
71T75602S100BGI

71T75602S100BGI

IC SRAM 18MBIT PAR 119PBGA

Renesas Electronics Corporation

0 -
71T75602S100BGI

数据表

- 119-BGA Tray Obsolete Not Verified Volatile SRAM - Synchronous, SDR (ZBT) 18Mbit 512K x 36 119-PBGA (14x22) Parallel 100 MHz SRAM - 5 ns Surface Mount 2.375V ~ 2.625V - -40°C ~ 85°C (TA) -
MT29F8G08ADADAH4-IT:D TR

MT29F8G08ADADAH4-IT:D TR

IC FLASH 8GBIT PARALLEL 63VFBGA

Micron Technology Inc.

0 -
MT29F8G08ADADAH4-IT:D TR

数据表

- 63-VFBGA Tape & Reel (TR) Active Verified Non-Volatile FLASH - NAND 8Gbit 1G x 8 63-VFBGA (9x11) Parallel - FLASH - - Surface Mount 2.7V ~ 3.6V - -40°C ~ 85°C (TA) -
71T75602S100BGI8

71T75602S100BGI8

IC SRAM 18MBIT PAR 119PBGA

Renesas Electronics Corporation

0 -
71T75602S100BGI8

数据表

- 119-BGA Tape & Reel (TR) Obsolete Not Verified Volatile SRAM - Synchronous, SDR (ZBT) 18Mbit 512K x 36 119-PBGA (14x22) Parallel 100 MHz SRAM - 5 ns Surface Mount 2.375V ~ 2.625V - -40°C ~ 85°C (TA) -
IDT71T75602S100PF

IDT71T75602S100PF

IC SRAM 18MBIT PARALLEL 100TQFP

Renesas Electronics Corporation

0 -
IDT71T75602S100PF

数据表

- 100-LQFP Tray Obsolete Not Verified Volatile SRAM - Synchronous, SDR (ZBT) 18Mbit 512K x 36 100-TQFP (14x14) Parallel 100 MHz SRAM - 5 ns Surface Mount 2.375V ~ 2.625V - 0°C ~ 70°C (TA) -
IDT71T75602S100PF8

IDT71T75602S100PF8

IC SRAM 18MBIT PARALLEL 100TQFP

Renesas Electronics Corporation

0 -
IDT71T75602S100PF8

数据表

- 100-LQFP Tape & Reel (TR) Obsolete Not Verified Volatile SRAM - Synchronous, SDR (ZBT) 18Mbit 512K x 36 100-TQFP (14x14) Parallel 100 MHz SRAM - 5 ns Surface Mount 2.375V ~ 2.625V - 0°C ~ 70°C (TA) -
IS43QR85120B-083RBL

IS43QR85120B-083RBL

IC DRAM 4GBIT POD 78TWBGA

ISSI, Integrated Silicon Solution Inc

0 -
IS43QR85120B-083RBL

数据表

- 78-TFBGA Bulk Active - Volatile SDRAM - DDR4 4Gbit 512M x 8 78-TWBGA (10x14) POD 1.2 GHz DRAM 15ns 19 ns Surface Mount 1.14V ~ 1.26V - 0°C ~ 95°C (TC) -
IDT71T75602S100PFG

IDT71T75602S100PFG

IC SRAM 18MBIT PARALLEL 100TQFP

Renesas Electronics Corporation

0 -
IDT71T75602S100PFG

数据表

- 100-LQFP Tray Obsolete Not Verified Volatile SRAM - Synchronous, SDR (ZBT) 18Mbit 512K x 36 100-TQFP (14x14) Parallel 100 MHz SRAM - 5 ns Surface Mount 2.375V ~ 2.625V - 0°C ~ 70°C (TA) -
IDT71T75602S100PFG8

IDT71T75602S100PFG8

IC SRAM 18MBIT PARALLEL 100TQFP

Renesas Electronics Corporation

0 -
IDT71T75602S100PFG8

数据表

- 100-LQFP Tape & Reel (TR) Obsolete Not Verified Volatile SRAM - Synchronous, SDR (ZBT) 18Mbit 512K x 36 100-TQFP (14x14) Parallel 100 MHz SRAM - 5 ns Surface Mount 2.375V ~ 2.625V - 0°C ~ 70°C (TA) -
FEMDRM032G-A3A55

FEMDRM032G-A3A55

32GB EMMC TLC 5.1 -25C+85C IND

Lexar Enterprise

0 -
FEMDRM032G-A3A55

数据表

- 153-BGA Obsolete Not Verified Non-Volatile FLASH - NAND (TLC) 32GByte (NAND) - - eMMC_5.1 200 MHz FLASH 5ns - Surface Mount 1.8V ~ 3.3V - -25°C ~ 85°C -
IS46LQ16256B-062BLA1-TR

IS46LQ16256B-062BLA1-TR

AUTOMOTIVE (TC: -40 TO +95C), 4G

ISSI, Integrated Silicon Solution Inc

0 -
IS46LQ16256B-062BLA1-TR

数据表

- 200-TFBGA Tape & Reel (TR) Active - Volatile SDRAM - Mobile LPDDR4 4Gbit 256M x 16 200-TFBGA (10x14.5) LVSTL 1.6 GHz DRAM 18ns 3.5 ns Surface Mount 1.06V ~ 1.17V, 1.7V ~ 1.95V AEC-Q100 -40°C ~ 95°C (TC) Automotive
IS46LQ16256BL-062BLA1-TR

IS46LQ16256BL-062BLA1-TR

AUTOMOTIVE (TC: -40 TO +95C), 4G

ISSI, Integrated Silicon Solution Inc

0 -
IS46LQ16256BL-062BLA1-TR

数据表

- 200-TFBGA Tape & Reel (TR) Active - Volatile SDRAM - Mobile LPDDR4X 4Gbit 256M x 16 200-TFBGA (10x14.5) LVSTL 1.6 GHz DRAM 18ns 3.5 ns Surface Mount 1.06V ~ 1.17V, 1.7V ~ 1.95V AEC-Q100 -40°C ~ 95°C (TC) Automotive
IS62WV102416GALL-55TLI

IS62WV102416GALL-55TLI

IC SRAM 16MBIT PARALLEL 48TSOP I

ISSI, Integrated Silicon Solution Inc

0 -
IS62WV102416GALL-55TLI

数据表

- 48-TFSOP (0.724", 18.40mm Width) Tube Active Not Verified Volatile SRAM - Asynchronous 16Mbit 1M x 16 48-TSOP I Parallel - SRAM 55ns 55 ns Surface Mount 1.65V ~ 2.2V - -40°C ~ 85°C (TA) -
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