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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 可编程 存储类型 技术 存储容量 存储组织 供应商设备封装 存储接口 时钟频率 存储格式 写周期时间 - 字,页 访问时间 安装类型 电压 - 电源 认证 工作温度 等级
IDT71P74804S167BQ

IDT71P74804S167BQ

IC SRAM 18MBIT PAR 165CABGA

Renesas Electronics Corporation

0 -
IDT71P74804S167BQ

数据表

- 165-TBGA Tray Obsolete Not Verified Volatile SRAM - Synchronous, QDR II 18Mbit 1M x 18 165-CABGA (13x15) Parallel 167 MHz SRAM - 8.4 ns Surface Mount 1.7V ~ 1.9V - 0°C ~ 70°C (TA) -
IDT71P74804S167BQG

IDT71P74804S167BQG

IC SRAM 18MBIT PAR 165CABGA

Renesas Electronics Corporation

0 -
IDT71P74804S167BQG

数据表

- 165-TBGA Tray Obsolete Not Verified Volatile SRAM - Synchronous, QDR II 18Mbit 1M x 18 165-CABGA (13x15) Parallel 167 MHz SRAM - 8.4 ns Surface Mount 1.7V ~ 1.9V - 0°C ~ 70°C (TA) -
IDT71P74804S200BQ

IDT71P74804S200BQ

IC SRAM 18MBIT PAR 165CABGA

Renesas Electronics Corporation

0 -
IDT71P74804S200BQ

数据表

- 165-TBGA Tray Obsolete Not Verified Volatile SRAM - Synchronous, QDR II 18Mbit 1M x 18 165-CABGA (13x15) Parallel 200 MHz SRAM - 8.4 ns Surface Mount 1.7V ~ 1.9V - 0°C ~ 70°C (TA) -
IS22EF04GP-JQLA2

IS22EF04GP-JQLA2

4GB, 100 BALL FBGA, 3.3V, ROHS,

ISSI, Integrated Silicon Solution Inc

0 -
IS22EF04GP-JQLA2

数据表

- 100-LBGA Tray Active - Non-Volatile FLASH - NAND (MLC) 32Gbit 4G x 8 100-LFBGA (14x18) eMMC_5.1 200 MHz FLASH - - Surface Mount 2.7V ~ 3.6V AEC-Q100 -40°C ~ 105°C (TA) Automotive
IDT71P74804S200BQG

IDT71P74804S200BQG

IC SRAM 18MBIT PARALLEL 165CABGA

Renesas Electronics Corporation

0 -
IDT71P74804S200BQG

数据表

- 165-TBGA Tray Obsolete Not Verified Volatile SRAM - Synchronous, QDR II 18Mbit 1M x 18 165-CABGA (13x15) Parallel 200 MHz SRAM - 8.4 ns Surface Mount 1.7V ~ 1.9V - 0°C ~ 70°C (TA) -
MT53E768M16D1ZW-046 WT:C

MT53E768M16D1ZW-046 WT:C

IC DRAM 12GBIT PAR 200TFBGA

Micron Technology Inc.

0 -
MT53E768M16D1ZW-046 WT:C

数据表

- 200-TFBGA Tray Active - Volatile SDRAM - Mobile LPDDR4X 12Gbit 768M x 16 200-TFBGA (10x14.5) Parallel 2.133 GHz DRAM - - Surface Mount 1.06V ~ 1.17V - -25°C ~ 85°C -
IDT71P74804S250BQ

IDT71P74804S250BQ

IC SRAM 18MBIT PAR 165CABGA

Renesas Electronics Corporation

0 -
IDT71P74804S250BQ

数据表

- 165-TBGA Tray Obsolete Not Verified Volatile SRAM - Synchronous, QDR II 18Mbit 1M x 18 165-CABGA (13x15) Parallel 250 MHz SRAM - 8.4 ns Surface Mount 1.7V ~ 1.9V - 0°C ~ 70°C (TA) -
IS43LQ16256BL-062BLI

IS43LQ16256BL-062BLI

4G, 0.57-0.65V/1.06-1.17/1.70-1.

ISSI, Integrated Silicon Solution Inc

0 -
IS43LQ16256BL-062BLI

数据表

- 200-VFBGA Tray Active - Volatile SDRAM - Mobile LPDDR4X 4Gbit 256M x 16 200-VFBGA (10x14.5) LVSTL 1.6 GHz DRAM - - Surface Mount 1.06V ~ 1.17V, 1.7V ~ 1.95V - -40°C ~ 95°C (TC) -
W66CL2NQUAFJ

W66CL2NQUAFJ

IC DRAM 4GBIT LVSTL 11 200WFBGA

Winbond Electronics

0 -
W66CL2NQUAFJ

数据表

- 200-WFBGA Tray Not For New Designs Not Verified Volatile SDRAM - Mobile LPDDR4 4Gbit 128M x 32 200-WFBGA (10x14.5) LVSTL_11 1.6 GHz DRAM 18ns 3.5 ns Surface Mount 1.06V ~ 1.17V, 1.7V ~ 1.95V - -40°C ~ 105°C (TC) -
S25HL512TDPBHB013

S25HL512TDPBHB013

IC FLASH 512MBIT SPI/QUAD 24FBGA

Infineon Technologies

0 -
S25HL512TDPBHB013

数据表

SEMPER™ 24-VBGA Tape & Reel (TR) Active Not Verified Non-Volatile FLASH - NOR (SLC) 512Mbit 64M x 8 24-FBGA (6x8) SPI - Quad I/O, QPI 133 MHz FLASH - - Surface Mount 2.7V ~ 3.6V - -40°C ~ 105°C (TA) -
S25HS512TDPBHB013

S25HS512TDPBHB013

IC FLASH 512MBIT SPI/QUAD 24FBGA

Infineon Technologies

0 -
S25HS512TDPBHB013

数据表

SEMPER™ 24-VBGA Tape & Reel (TR) Active Not Verified Non-Volatile FLASH - NOR (SLC) 512Mbit 64M x 8 24-FBGA (6x8) SPI - Quad I/O, QPI 133 MHz FLASH - - Surface Mount 1.7V ~ 2V - -40°C ~ 105°C (TA) -
MT47H128M4CF-187E:G

MT47H128M4CF-187E:G

IC DRAM 512MBIT PAR 60FBGA

Micron Technology Inc.

0 -
MT47H128M4CF-187E:G

数据表

- 60-TFBGA Tray Discontinued at Digi-Key Not Verified Volatile SDRAM - DDR2 512Mbit 128M x 4 60-FBGA (8x10) Parallel 533 MHz DRAM 15ns 350 ps Surface Mount 1.7V ~ 1.9V - 0°C ~ 85°C (TC) -
GS84036CGT-250I

GS84036CGT-250I

IC SRAM 4MBIT PARALLEL 100TQFP

GSI Technology Inc.

0 -
GS84036CGT-250I

数据表

- 100-LQFP Tray Active Not Verified Volatile SRAM - Synchronous, Standard 4Mbit 128K x 36 100-TQFP (20x14) Parallel 250 MHz SRAM - - Surface Mount 2.3V ~ 2.7V, 3V ~ 3.6V - -40°C ~ 100°C (TJ) -
IDT71P74804S250BQG

IDT71P74804S250BQG

IC SRAM 18MBIT PAR 165CABGA

Renesas Electronics Corporation

0 -
IDT71P74804S250BQG

数据表

- 165-TBGA Tray Obsolete Not Verified Volatile SRAM - Synchronous, QDR II 18Mbit 1M x 18 165-CABGA (13x15) Parallel 250 MHz SRAM - 8.4 ns Surface Mount 1.7V ~ 1.9V - 0°C ~ 70°C (TA) -
GS84018CGT-250I

GS84018CGT-250I

IC SRAM 4MBIT PARALLEL 100TQFP

GSI Technology Inc.

0 -
GS84018CGT-250I

数据表

- 100-LQFP Tray Active Not Verified Volatile SRAM - Synchronous, Standard 4Mbit 256K x 18 100-TQFP (20x14) Parallel 250 MHz SRAM - - Surface Mount 2.3V ~ 2.7V, 3V ~ 3.6V - -40°C ~ 100°C (TJ) -
IDT71T016SA12PH

IDT71T016SA12PH

IC SRAM 1MBIT PARALLEL 44TSOP II

Renesas Electronics Corporation

0 -
IDT71T016SA12PH

数据表

- 44-TSOP (0.400", 10.16mm Width) Tube Obsolete Not Verified Volatile SRAM - Asynchronous 1Mbit 64K x 16 44-TSOP II Parallel - SRAM 12ns 12 ns Surface Mount 2.375V ~ 2.625V - 0°C ~ 70°C (TA) -
IS62WV102416EALL-55BLI

IS62WV102416EALL-55BLI

IC SRAM 16MBIT PARALLEL 48VFBGA

ISSI, Integrated Silicon Solution Inc

0 -
IS62WV102416EALL-55BLI

数据表

- 48-VFBGA Tray Active Not Verified Volatile SRAM - Asynchronous 16Mbit 1M x 16 48-VFBGA (6x8) Parallel - SRAM 55ns 55 ns Surface Mount 1.65V ~ 1.98V - -40°C ~ 85°C (TA) -
MT48LC64M4A2TG-75:D TR

MT48LC64M4A2TG-75:D TR

IC DRAM 256MBIT PAR 54TSOP II

Micron Technology Inc.

0 -
MT48LC64M4A2TG-75:D TR

数据表

- 54-TSOP (0.400", 10.16mm Width) Cut Tape (CT) Obsolete Not Verified Volatile SDRAM 256Mbit 64M x 4 54-TSOP II Parallel 133 MHz DRAM 15ns 5.4 ns Surface Mount 3V ~ 3.6V - 0°C ~ 70°C (TA) -
24LC16BT-M/SN

24LC16BT-M/SN

IC EEPROM 16KBIT I2C 8SOIC

Microchip Technology

0 -
24LC16BT-M/SN

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active Not Verified Non-Volatile EEPROM 16Kbit 2K x 8 8-SOIC I2C 400 kHz EEPROM 5ms 900 ns Surface Mount 2.5V ~ 5.5V - -55°C ~ 125°C (TA) -
MT42L64M32D2HE-18 AAT:D

MT42L64M32D2HE-18 AAT:D

IC DRAM 2GBIT PARALLEL 134VFBGA

Micron Technology Inc.

0 -
MT42L64M32D2HE-18 AAT:D

数据表

- 134-VFBGA Tray Active Not Verified Volatile SDRAM - Mobile LPDDR2 2Gbit 64M x 32 134-VFBGA (10x11.5) Parallel 533 MHz DRAM 15ns - Surface Mount 1.14V ~ 1.3V AEC-Q100 -40°C ~ 105°C (TC) Automotive
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