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单个 IGBTs

制造商 系列 封装/外壳 包装 产品状态 IGBT 类型 电压 - 集电极发射极击穿(最大值) 电流 - 集电极脉冲 (Icm) 导通电压 (Vce(on))(最大值)@ Vge, Ic 功率 - 最大值 安装类型 开关能量 输入类型 电流 - 集电极 (Ic)(最大值) 栅极电荷 导通/关断时间 (Td) @ 25°C 认证 测试条件 供应商设备封装 等级 反向恢复时间 (trr) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 IGBT 类型 电压 - 集电极发射极击穿(最大值) 电流 - 集电极脉冲 (Icm) 导通电压 (Vce(on))(最大值)@ Vge, Ic 功率 - 最大值 安装类型 开关能量 输入类型 电流 - 集电极 (Ic)(最大值) 栅极电荷 导通/关断时间 (Td) @ 25°C 认证 测试条件 供应商设备封装 等级 反向恢复时间 (trr) 工作温度
IRGP4750DPBF

IRGP4750DPBF

IGBT WITH RECOVERY DIODE

International Rectifier

20,800 -
IRGP4750DPBF

数据表

- TO-247-3 Tube Obsolete - 650 V 105 A 2V @ 15V, 35A 273 W Through Hole 1.3mJ (on), 500µJ (off) Standard 70 A 105 nC 50ns/105ns - 400V, 35A, 10Ohm, 15V TO-247AC - 150 ns -40°C ~ 175°C (TJ)
RJP3047ADPK-80#T2

RJP3047ADPK-80#T2

HIGH SPEED IGBT

Renesas Electronics Corporation

12,830 -
RJP3047ADPK-80#T2

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
RJP3047DPK-80#T2

RJP3047DPK-80#T2

HIGH SPEED IGBT

Renesas Electronics Corporation

3,045 -
RJP3047DPK-80#T2

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
HGTB12N60D1C

HGTB12N60D1C

12A, 600V N-CHANNEL IGBT

Harris Corporation

598 -
HGTB12N60D1C

数据表

- TO-220-5 Bulk Active - 600 V 40 A 2.7V @ 15V, 10A 75 W Through Hole - Standard 12 A - - - - TO-220-5 - - -55°C ~ 150°C (TJ)
SGW30N60FKSA1

SGW30N60FKSA1

IGBT NPT 600V 41A TO247-3

Infineon Technologies

2,399 -
SGW30N60FKSA1

数据表

- TO-247-3 Bulk Obsolete NPT 600 V 112 A 2.4V @ 15V, 30A 250 W Through Hole 1.29mJ Standard 41 A 140 nC 44ns/291ns - 400V, 30A, 11Ohm, 15V PG-TO247-3-1 - - -55°C ~ 150°C (TJ)
AUIRGF65A40D0

AUIRGF65A40D0

DISCRETES

Infineon Technologies

9,848 -
AUIRGF65A40D0

数据表

CooliRIGBT™ TO-247-3 Bulk Discontinued at Digi-Key - - - - - Through Hole - - - - - - - TO-247AD - - -
IRGP4063PBF

IRGP4063PBF

IGBT 600V 96A 330W TO247AC

Infineon Technologies

8,044 -
IRGP4063PBF

数据表

- TO-247-3 Bulk Obsolete Trench 600 V 144 A 2.14V @ 15V, 48A 330 W Through Hole 625µJ (on), 1.28mJ (off) Standard 96 A 95 nC 60ns/145ns - 400V, 48A, 10Ohm, 15V TO-247AC - - -55°C ~ 175°C (TJ)
SGH15N120RUFTU

SGH15N120RUFTU

IGBT, 24A, 1200V, N-CHANNEL

Fairchild Semiconductor

1,539 -
SGH15N120RUFTU

数据表

- TO-3P-3, SC-65-3 Bulk Active - 1200 V 45 A 3V @ 15V, 15A 180 W Through Hole - Standard 24 A 108 nC 20ns/60ns - 600V, 15A, 20Ohm, 15V TO-3P - - -55°C ~ 150°C (TJ)
NGTB30N65IHL2WG

NGTB30N65IHL2WG

IGBT TRENCH/FS 650V 60A TO247-3

onsemi

8,676 -
NGTB30N65IHL2WG

数据表

- TO-247-3 Bulk Obsolete Trench Field Stop 650 V 120 A 2.2V @ 15V, 30A 300 W Through Hole 200µJ (off) Standard 60 A 135 nC -/145ns - 400V, 30A, 10Ohm, 15V TO-247-3 - 430 ns -55°C ~ 175°C (TJ)
FGA20S125P-SN00336

FGA20S125P-SN00336

IGBT 1250V 20A 250W TO-3PN

onsemi

9,247 -
FGA20S125P-SN00336

数据表

- TO-3P-3, SC-65-3 Tube Obsolete Trench 1250 V 60 A 2.5V @ 15V, 20A 250 W Through Hole 740µJ (on), 500µJ (off) Standard 40 A 153 nC 10ns/400ns - 600V, 20A, 10Ohm, 15V TO-3PN - - -55°C ~ 175°C (TJ)
HGT1S15N120C3

HGT1S15N120C3

35A, 1200V, N-CHANNEL IGBT

Harris Corporation

4,004 -
HGT1S15N120C3

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active - 1200 V 120 A 3.5V @ 15V, 15A 164 W Through Hole - Standard 35 A 100 nC - - - TO-262 (I2PAK) - - -55°C ~ 150°C (TJ)
HGT1S15N120C3S

HGT1S15N120C3S

35A, 1200V, N-CHANNEL IGBT

Harris Corporation

695 -
HGT1S15N120C3S

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active - 1200 V 120 A 3.5V @ 15V, 15A 164 W Surface Mount - Standard 35 A 100 nC - - - TO-263AB - - -55°C ~ 150°C (TJ)
RJH30E3DPK-M0#T2

RJH30E3DPK-M0#T2

IGBT

Renesas Electronics Corporation

6,462 -
RJH30E3DPK-M0#T2

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
IRG7PH37K10DPBF

IRG7PH37K10DPBF

IGBT W/ULTRAFAST SOFT RECOVERY D

International Rectifier

2,437 -
IRG7PH37K10DPBF

数据表

- TO-247-3 Bulk Active - 1200 V 60 A 2.4V @ 15V, 15A 216 W Through Hole 1mJ (on), 600µJ (off) Standard 45 A 135 nC 50ns/240ns - 600V, 15A, 10Ohm, 15V TO-247AC - 120 ns -40°C ~ 150°C (TJ)
STGWT20V60F

STGWT20V60F

IGBT 600V 40A 167W TO3PF

STMicroelectronics

587 -
STGWT20V60F

数据表

- TO-3P-3, SC-65-3 Tube Obsolete Trench Field Stop 600 V 80 A 2.2V @ 15V, 20A 167 W Through Hole 200µJ (on), 130µJ (off) Standard 40 A 116 nC 38ns/149ns - 400V, 20A, 15V TO-3P - - -55°C ~ 175°C (TJ)
STGWT20V60DF

STGWT20V60DF

IGBT 600V 40A 167W TO3P-3

STMicroelectronics

235 -
STGWT20V60DF

数据表

- TO-3P-3, SC-65-3 Tube Obsolete Trench Field Stop 600 V 80 A 2.2V @ 15V, 20A 167 W Through Hole 200µJ (on), 130µJ (off) Standard 40 A 116 nC 38ns/149ns - 400V, 20A, 15V TO-3P - 40 ns -55°C ~ 175°C (TJ)
IRGP4790PBF

IRGP4790PBF

IGBT 650V TO-247

Infineon Technologies

2,207 -
IRGP4790PBF

数据表

- TO-247-3 Tube Obsolete - 650 V 225 A 2V @ 15V, 75A 455 W Through Hole 2.5mJ (on), 2.2mJ (off) Standard 140 A 210 nC 50ns/200ns - 400V, 75A, 10Ohm, 15V TO-247AC - - -40°C ~ 175°C (TJ)
RGWX5TS65GC11

RGWX5TS65GC11

IGBT TRENCH FLD 650V 132A TO247N

Rohm Semiconductor

444 -
RGWX5TS65GC11

数据表

- TO-247-3 Tube Not For New Designs Trench Field Stop 650 V 300 A 1.9V @ 15V, 75A 348 W Through Hole - Standard 132 A 213 nC 64ns/229ns - 400V, 75A, 10Ohm, 15V TO-247N - - -40°C ~ 175°C (TJ)
HGTG5N120BND

HGTG5N120BND

IGBT NPT 1200V 21A TO247-3

onsemi

2,022 -
HGTG5N120BND

数据表

- TO-247-3 Tube Obsolete NPT 1200 V 40 A 2.7V @ 15V, 5A 167 W Through Hole 450µJ (on), 390µJ (off) Standard 21 A 53 nC 22ns/160ns - 960V, 5A, 25Ohm, 15V TO-247-3 - 65 ns -55°C ~ 150°C (TJ)
IRGP4266PBF

IRGP4266PBF

IGBT W/ULTRAFAST SOFT RECOVERY D

International Rectifier

3,822 -
IRGP4266PBF

数据表

- TO-247-3 Bulk Active - 650 V 300 A 2.1V @ 15V, 75A 450 W Through Hole 3.2mJ (on), 1.7mJ (off) Standard 140 A 210 nC 80ns/200ns - 400V, 75A, 10Ohm, 15V TO-247AC - - -40°C ~ 175°C (TJ)
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