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单个 IGBTs

制造商 系列 封装/外壳 包装 产品状态 IGBT 类型 电压 - 集电极发射极击穿(最大值) 电流 - 集电极脉冲 (Icm) 导通电压 (Vce(on))(最大值)@ Vge, Ic 功率 - 最大值 安装类型 开关能量 输入类型 电流 - 集电极 (Ic)(最大值) 栅极电荷 导通/关断时间 (Td) @ 25°C 认证 测试条件 供应商设备封装 等级 反向恢复时间 (trr) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 IGBT 类型 电压 - 集电极发射极击穿(最大值) 电流 - 集电极脉冲 (Icm) 导通电压 (Vce(on))(最大值)@ Vge, Ic 功率 - 最大值 安装类型 开关能量 输入类型 电流 - 集电极 (Ic)(最大值) 栅极电荷 导通/关断时间 (Td) @ 25°C 认证 测试条件 供应商设备封装 等级 反向恢复时间 (trr) 工作温度
IGTH20N40AD

IGTH20N40AD

N CHANNEL IGBT FOR SWITCHING APP

Harris Corporation

444 -
IGTH20N40AD

数据表

- TO-218-3 Isolated Tab, TO-218AC Bulk Active - 400 V - - - Through Hole - Standard 20 A - - - - TO-218 Isolated - - -
IGW50N65F5AXKSA1

IGW50N65F5AXKSA1

IGBT 650V TO247-3

Infineon Technologies

2,109 -
IGW50N65F5AXKSA1

数据表

TrenchStop™ TO-247-3 Bulk Obsolete Trench 650 V 150 A 2.1V @ 15V, 50A 270 W Through Hole 490µJ (on), 140µJ (off) Standard 80 A 108 nC 21ns/156ns AEC-Q101 400V, 25A, 12Ohm, 15V PG-TO247-3 Automotive - -40°C ~ 175°C (TJ)
HGTH20N50EID

HGTH20N50EID

20A, 500V, N CHANNEL IGBT WITH A

Harris Corporation

1,433 -
HGTH20N50EID

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
HGTH20N50E1

HGTH20N50E1

20A, 500V, N-CHANNEL IGBT

Harris Corporation

287 -
HGTH20N50E1

数据表

- TO-218-3 Isolated Tab, TO-218AC Bulk Active - 500 V 35 A 3.2V @ 20V, 35A 100 W Through Hole - Standard 20 A 33 nC - - - TO-218 Isolated - - -55°C ~ 150°C (TJ)
HGTG12N60DID

HGTG12N60DID

24A, 600V, RUGGED, UFS SERIES N

Harris Corporation

15,378 -
HGTG12N60DID

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
RJH60M2DPE-00#J3

RJH60M2DPE-00#J3

IGBT TRENCH 600V 25A 4LDPAK

Renesas Electronics Corporation

159,000 -
RJH60M2DPE-00#J3

数据表

- SC-83 Bulk Active Trench 600 V - 2.5V @ 15V, 12A 63 W Surface Mount 180µJ (on), 180µJ (off) Standard 25 A 33 nC 32ns/70ns - 300V, 12A, 5Ohm, 15V 4-LDPAK - 85 ns 150°C (TJ)
NGTB50N60FWG

NGTB50N60FWG

IGBT 600V 100A 223W TO247

onsemi

5,565 -
NGTB50N60FWG

数据表

* - Tube Obsolete - - - - - - - - - - - - - - - - -
NGTB40N60L2WG

NGTB40N60L2WG

IGBT TRENCH/FS 600V 80A TO247

onsemi

3,498 -
NGTB40N60L2WG

数据表

- TO-247-3 Bulk Obsolete Trench Field Stop 600 V 160 A 2.61V @ 15V, 40A 417 W Through Hole 1.17mJ (on), 280µJ (off) Standard 80 A 228 nC 98ns/213ns - 400V, 40A, 10Ohm, 15V TO-247-3 - 73 ns -55°C ~ 175°C (TJ)
RJP60D0DPE-00#J3

RJP60D0DPE-00#J3

IGBT 600V 45A LDPAK

Renesas Electronics Corporation

1,021 -
RJP60D0DPE-00#J3

数据表

- SC-83 Tape & Reel (TR) Active - 600 V - 2.2V @ 15V, 22A 122 W Surface Mount - Standard 45 A 45 nC 35ns/90ns - 300V, 22A, 5Ohm, 15V LDPAK - - 150°C (TJ)
NGTB60N60SWG

NGTB60N60SWG

IGBT 600V 120A 298W TO247

onsemi

6,794 -
NGTB60N60SWG

数据表

- TO-247-3 Tube Obsolete Trench Field Stop 600 V 240 A 2.5V @ 15V, 60A 298 W Through Hole 1.41mJ (on), 600µJ (off) Standard 120 A 173 nC 87ns/180ns - 400V, 60A, 10Ohm, 15V TO-247-3 - 76 ns -55°C ~ 150°C (TJ)
IRG8P25N120KDPBF

IRG8P25N120KDPBF

IGBT WITH ULTRAFAST SOFT RECOVER

International Rectifier

13,742 -
IRG8P25N120KDPBF

数据表

- TO-247-3 Bulk Active - 1200 V 45 A 2V @ 15V, 15A 180 W Through Hole 800µJ (on), 900µJ (off) Standard 40 A 135 nC 20ns/170ns - 600V, 15A, 10Ohm, 15V TO-247AC - 70 ns -40°C ~ 150°C (TJ)
IRGP4063-EPBF

IRGP4063-EPBF

IGBT W/ULTRAFAST SOFT RECOVERY D

International Rectifier

892 -
IRGP4063-EPBF

数据表

- TO-247-3 Bulk Active Trench 600 V 144 A 2.14V @ 15V, 48A 330 W Through Hole 625µJ (on), 1.28mJ (off) Standard 96 A 95 nC 60ns/145ns - 400V, 48A, 10Ohm, 15V TO-247AD - - -55°C ~ 175°C (TJ)
HGTG20N60B3-FS

HGTG20N60B3-FS

IGBT, 40A, 600V, N-CHANNEL, TO-2

Fairchild Semiconductor

21,095 -
HGTG20N60B3-FS

数据表

- TO-247-3 Bulk Active - 600 V 160 A 2V @ 15V, 20A 165 W Through Hole - Standard 40 A 135 nC - - - TO-247 - - -40°C ~ 150°C (TJ)
HGTG20N60B3

HGTG20N60B3

N-CHANNEL IGBT

Harris Corporation

1,325 -
HGTG20N60B3

数据表

- TO-247-3 Tube Obsolete - 600 V 160 A 2V @ 15V, 20A 165 W Through Hole 475µJ (on), 1.05mJ (off) Standard 40 A 80 nC - - 480V, 20A, 10Ohm, 15V TO-247 - - -40°C ~ 150°C (TJ)
FGI40N60SFTU

FGI40N60SFTU

IGBT, 80A, 600V, N-CHANNEL

Fairchild Semiconductor

900 -
FGI40N60SFTU

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete Field Stop 600 V 120 A 2.9V @ 15V, 40A 290 W Through Hole 1.13mJ (on), 310µJ (off) Standard 80 A 120 nC 25ns/115ns - 400V, 40A, 10Ohm, 15V TO-262 (I2PAK) - - -55°C ~ 150°C (TJ)
RGT50TS65DGC11

RGT50TS65DGC11

IGBT TRNCH FIELD 650V 48A TO247N

Rohm Semiconductor

431 -
RGT50TS65DGC11

数据表

- TO-247-3 Tube Not For New Designs Trench Field Stop 650 V 75 A 2.1V @ 15V, 25A 174 W Through Hole - Standard 48 A 49 nC 27ns/88ns - 400V, 25A, 10Ohm, 15V TO-247N - 58 ns -40°C ~ 175°C (TJ)
RGTH80TK65GC11

RGTH80TK65GC11

IGBT TRNCH FIELD 650V 31A TO3PFM

Rohm Semiconductor

450 -
RGTH80TK65GC11

数据表

- TO-3PFM, SC-93-3 Tube Active Trench Field Stop 650 V 160 A 2.1V @ 15V, 40A 66 W Through Hole - Standard 31 A 79 nC 34ns/120ns - 400V, 40A, 10Ohm, 15V TO-3PFM - - -40°C ~ 175°C (TJ)
HGTP15N50C1

HGTP15N50C1

15A, 500V, N-CHANNEL IGBT

Harris Corporation

8,373 -
HGTP15N50C1

数据表

- TO-220-3 Bulk Active - 500 V 35 A 3.2V @ 20V, 35A 75 W Through Hole - Standard 15 A 33 nC - - - TO-220 - - -55°C ~ 150°C (TJ)
RGTV80TK65GVC11

RGTV80TK65GVC11

IGBT TRNCH FIELD 650V 39A TO3PFM

Rohm Semiconductor

450 -
RGTV80TK65GVC11

数据表

- TO-3PFM, SC-93-3 Tube Active Trench Field Stop 650 V 160 A 1.9V @ 15V, 40A 85 W Through Hole 1.02mJ (on), 710µJ (off) Standard 39 A 81 nC 39ns/113ns - 400V, 40A, 10Ohm, 15V TO-3PFM - - -40°C ~ 175°C (TJ)
RGW50TK65DGVC11

RGW50TK65DGVC11

IGBT TRNCH FIELD 650V 30A TO3PFM

Rohm Semiconductor

450 -
RGW50TK65DGVC11

数据表

- TO-3PFM, SC-93-3 Tube Active Trench Field Stop 650 V 100 A 1.9V @ 15V, 25A 67 W Through Hole 390µJ (on), 430µJ (off) Standard 30 A 73 nC 35ns/102ns - 400V, 25A, 10Ohm, 15V TO-3PFM - 92 ns -40°C ~ 175°C (TJ)
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