Toshiba Semiconductor and Storage|单个 IGBTs - 页 1

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	IGBT 类型	电压 - 集电极发射极击穿（最大值）	电流 - 集电极脉冲 (Icm)	导通电压 (Vce(on)）（最大值）@ Vge, Ic	功率 - 最大值	安装类型	开关能量	输入类型	电流 - 集电极 (Ic)（最大值）	栅极电荷	导通/关断时间 (Td) @ 25°C	认证	测试条件	供应商设备封装	等级	反向恢复时间 (trr)	工作温度
GT15J341,S4X IGBT 600V 15A TO220SIS Toshiba Semiconductor and Storage	155	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	-	600 V	60 A	2V @ 15V, 15A	30 W	Through Hole	300µJ (on), 300µJ (off)	Standard	15 A	-	60ns/170ns	-	300V, 15A, 33Ohm, 15V	TO-220SIS	-	80 ns	150°C (TJ)
GT30J121(Q) IGBT 600V 30A 170W TO3PN Toshiba Semiconductor and Storage	137	-	询价单	数据表	-	TO-3P-3, SC-65-3	Tube	Active	-	600 V	60 A	2.45V @ 15V, 30A	170 W	Through Hole	1mJ (on), 800µJ (off)	Standard	30 A	-	90ns/300ns	-	300V, 30A, 24Ohm, 15V	TO-3P(N)	-	-	-
GT40WR21,Q IGBT 1350V 40A TO3P Toshiba Semiconductor and Storage	106	-	询价单	数据表	-	TO-3P-3, SC-65-3	Tray	Active	-	1350 V	80 A	5.9V @ 15V, 40A	375 W	Through Hole	-	Standard	40 A	-	-	-	-	TO-3P(N)	-	-	175°C (TJ)
GT40RR21(STA1,E IGBT 1200V 40A TO3P Toshiba Semiconductor and Storage	52	-	询价单	数据表	-	TO-3P-3, SC-65-3	Tube	Active	-	1200 V	200 A	2.8V @ 15V, 40A	230 W	Through Hole	-, 540µJ (off)	Standard	40 A	-	-	-	280V, 40A, 10Ohm, 20V	TO-3P(N)	-	600 ns	175°C (TJ)
GT30N135SRA,S1E IGBT 1350V 60A TO247 Toshiba Semiconductor and Storage	39	-	询价单	数据表	-	TO-247-3	Tube	Active	-	1350 V	120 A	2.6V @ 15V, 60A	348 W	Through Hole	-, 1.3mJ (off)	Standard	60 A	270 nC	-	-	300V, 60A, 39Ohm, 15V	TO-247	-	-	175°C (TJ)
GT20J341,S4X(S DISCRETE IGBT TRANSISTOR TO-220S Toshiba Semiconductor and Storage	75	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	-	600 V	80 A	2V @ 15V, 20A	45 W	Through Hole	500µJ (on), 400µJ (off)	Standard	20 A	-	60ns/240ns	-	300V, 20A, 33Ohm, 15V	TO-220SIS	-	90 ns	150°C (TJ)
GT30J65MRB,S1E 650V SILICON N-CHANNEL IGBT, TO- Toshiba Semiconductor and Storage	64	-	询价单	数据表	-	TO-3P-3, SC-65-3	Tube	Active	-	650 V	-	1.8V @ 15V, 30A	200 W	Through Hole	1.4mJ (on), 220µJ (off)	Standard	60 A	70 nC	75ns/400ns	-	400V, 15A, 56Ohm, 15V	TO-3P(N)	-	200 ns	175°C (TJ)
GT40QR21(STA1,E,D IGBT 1200V 40A TO3P Toshiba Semiconductor and Storage	82	-	询价单	数据表	-	TO-3P-3, SC-65-3	Tube	Active	-	1200 V	80 A	2.7V @ 15V, 40A	230 W	Through Hole	-, 290µJ (off)	Standard	40 A	-	-	-	280V, 40A, 10Ohm, 20V	TO-3P(N)	-	600 ns	175°C (TJ)
GT50N322A IGBT 1000V 50A TO3P Toshiba Semiconductor and Storage	52	-	询价单	数据表	-	TO-3P-3, SC-65-3	Tray	Active	-	1000 V	120 A	2.8V @ 15V, 60A	156 W	Through Hole	-	Standard	50 A	-	-	-	-	TO-3P(N)	-	800 ns	150°C (TJ)
GT50JR21(STA1,E,S) PB-F IGBT / TRANSISTOR TO-3PN(OS Toshiba Semiconductor and Storage	37	-	询价单	数据表	-	TO-3P-3, SC-65-3	Tube	Active	-	600 V	100 A	2V @ 15V, 50A	230 W	Through Hole	-	Standard	50 A	-	-	-	-	TO-3P(N)	-	-	175°C (TJ)