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IGBT 模块
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | IGBT 类型 | 配置 | 电流 - 集电极 (Ic)（最大值） | 功率 - 最大值 | 导通电压 (Vce(on)）（最大值）@ Vge, Ic | 电流 - 集电极截止（最大值） | 输入电容 (Cies) @ Vce | 电压 - 集电极发射极击穿（最大值） | 输入 | NTC 热敏电阻 | 工作温度 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-GT200TS065NMODULES IGBT - IAP IGBT Vishay General Semiconductor - Diodes Division |
6 | - |
|
数据表 |
FRED Pt® | Module | Box | Active | Trench | Half Bridge Inverter | 193 A | 517 W | 2.3V @ 15V, 200A | 100 µA | - | 650 V | Standard | No | -40°C ~ 175°C (TJ) | Chassis Mount | INT-A-PAK IGBT |
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VS-GT200TS065SMODULES IGBT - IAP IGBT Vishay General Semiconductor - Diodes Division |
12 | - |
|
数据表 |
FRED Pt® | Module | Box | Active | Trench | Half Bridge Inverter | 476 A | 1000 W | 1.32V @ 15V, 200A | 200 µA | - | 650 V | Standard | No | -40°C ~ 175°C (TJ) | Chassis Mount | INT-A-PAK IGBT |
|
VS-GT80DA120UIGBT MOD 1200V 139A 658W SOT227 Vishay General Semiconductor - Diodes Division |
2,085 | - |
|
数据表 |
HEXFRED® | SOT-227-4, miniBLOC | Tube | Active | Trench | Single | 139 A | 658 W | 2.55V @ 15V, 80A | 100 µA | 4.4 nF @ 25 V | 1200 V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227 |
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VS-GB75DA120UPIGBT MODULE 1200V 658W SOT227 Vishay General Semiconductor - Diodes Division |
4,793 | - |
|
数据表 |
- | SOT-227-4, miniBLOC | Bulk | Obsolete | NPT | Single | - | 658 W | 3.8V @ 15V, 75A | 250 µA | - | 1200 V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227 |
|
CPV363M4FIGBT MODULE 600V 16A 36W IMS-2 Vishay General Semiconductor - Diodes Division |
4,644 | - |
|
数据表 |
- | 19-SIP (13 Leads), IMS-2 | - | Obsolete | - | Three Phase Inverter | 16 A | 36 W | 1.63V @ 15V, 16A | 250 µA | 1.1 nF @ 30 V | 600 V | Standard | No | -40°C ~ 150°C (TJ) | Through Hole | IMS-2 |
|
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VS-GT50LA65UFMODULES IGBT - SOT-227 IGBT Vishay General Semiconductor - Diodes Division |
7,915 | - |
|
数据表 |
FRED Pt® | SOT-227-4, miniBLOC | Bulk | Active | Trench Field Stop | Single Chopper | 59 A | 163 W | 2.1V @ 15V, 50A | 40 µA | - | 650 V | Standard | No | -40°C ~ 175°C (TJ) | Chassis Mount | SOT-227 |
|
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VS-GB50NA120UXIGBT MOD 1200V 84A 431W SOT227 Vishay General Semiconductor - Diodes Division |
8,934 | - |
|
数据表 |
- | SOT-227-4, miniBLOC | Bulk | Obsolete | NPT | Single | 84 A | 431 W | 2.8V @ 15V, 50A | 50 µA | - | 1200 V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227 |
|
|
VS-GB70LA60UFIGBT MOD 600V 111A 447W SOT227 Vishay General Semiconductor - Diodes Division |
5,864 | - |
|
数据表 |
- | SOT-227-4, miniBLOC | Bulk | Obsolete | NPT | Single | 111 A | 447 W | 2.44V @ 15V, 70A | 100 µA | - | 600 V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227 |
|
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VS-GB100DA60UPIGBT MOD 600V 125A 447W SOT227 Vishay General Semiconductor - Diodes Division |
7,001 | - |
|
数据表 |
- | SOT-227-4, miniBLOC | Bulk | Obsolete | - | Single | 125 A | 447 W | 2.8V @ 15V, 100A | 100 µA | - | 600 V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227 |
|
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VS-GT90DA60UMODULES IGBT - SOT-227 IGBT Vishay General Semiconductor - Diodes Division |
4,708 | - |
|
数据表 |
HEXFRED® | SOT-227-4, miniBLOC | Bulk | Active | Trench Field Stop | Single | 146 A | 446 W | 2.15V @ 15V, 100A | 100 µA | - | 600 V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227 |
