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IGBT 模块
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | IGBT 类型 | 配置 | 电流 - 集电极 (Ic)（最大值） | 功率 - 最大值 | 导通电压 (Vce(on)）（最大值）@ Vge, Ic | 电流 - 集电极截止（最大值） | 输入电容 (Cies) @ Vce | 电压 - 集电极发射极击穿（最大值） | 输入 | NTC 热敏电阻 | 工作温度 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VS-GT75YF120UTECONO - 4 PACK IGBT Vishay General Semiconductor - Diodes Division |
107 | - |
|
数据表 |
- | Module | Box | Active | Trench Field Stop | Full Bridge | 118 A | 431 W | 2.6V @ 15V, 75A | 100 µA | - | 1200 V | Standard | Yes | -40°C ~ 150°C (TJ) | Chassis Mount | - |
|
VS-GT90DA120USOT-227 - SINGLE SWITCH IGBT + A Vishay General Semiconductor - Diodes Division |
51 | - |
|
数据表 |
- | SOT-227-4, miniBLOC | Tube | Active | Trench Field Stop | Single | 169 A | 781 W | 2.6V @ 15V, 75A | 100 µA | - | 1200 V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227 |
|
VS-ENV020F65UPOWER MODULE Vishay General Semiconductor - Diodes Division |
9 | - |
|
数据表 |
* | - | Box | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
VS-ENV020M120MPOWER MODULE Vishay General Semiconductor - Diodes Division |
9 | - |
|
数据表 |
* | - | Box | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
VS-ENM040M60PPOWER MODULE Vishay General Semiconductor - Diodes Division |
5 | - |
|
数据表 |
* | - | Box | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
VS-ENK025C65SPOWER MODULE Vishay General Semiconductor - Diodes Division |
8 | - |
|
数据表 |
* | - | Box | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
VS-ENW30S120TPOWER MODULE Vishay General Semiconductor - Diodes Division |
8 | - |
|
数据表 |
* | - | Box | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
VS-GT100TS065NMODULES IGBT - IAP IGBT Vishay General Semiconductor - Diodes Division |
8 | - |
|
数据表 |
- | Module | Box | Active | Trench Field Stop | Half Bridge Inverter | 96 A | 259 W | 2.3V @ 15V, 100A | 50 µA | - | 650 V | Standard | No | -40°C ~ 175°C (TJ) | Chassis Mount | INT-A-PAK IGBT |
|
|
VS-GT100TS065SMODULES IGBT - IAP IGBT Vishay General Semiconductor - Diodes Division |
15 | - |
|
数据表 |
FRED Pt® | Module | Box | Active | Trench | Half Bridge Inverter | 247 A | 517 W | 1.32V @ 15V, 100A | 100 µA | - | 650 V | Standard | No | -40°C ~ 175°C (TJ) | Chassis Mount | INT-A-PAK IGBT |
|
|
VS-GT150TS065SMODULES IGBT - IAP IGBT Vishay General Semiconductor - Diodes Division |
15 | - |
|
数据表 |
FRED Pt® | Module | Box | Active | Trench | Half Bridge Inverter | 372 A | 789 W | 1.32V @ 15V, 150A | 150 µA | - | 650 V | Standard | No | -40°C ~ 175°C (TJ) | Chassis Mount | INT-A-PAK IGBT |
