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单个场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 技术 配置 增益 电压 - 测试 电流额定值(安培) 噪声系数 电流 - 测试 频率 功率 - 输出 额定电压 等级 供应商设备封装 认证 安装类型

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 增益 电压 - 测试 电流额定值(安培) 噪声系数 电流 - 测试 频率 功率 - 输出 额定电压 等级 供应商设备封装 认证 安装类型
PD57006-E

PD57006-E

RF MOSFET LDMOS 28V POWERSO-10RF

STMicroelectronics

3,701 -
PD57006-E

数据表

- PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) Tube Obsolete LDMOS - 15dB 28 V 1A - 70 mA 945MHz 6W 65 V - PowerSO-10RF (Formed Lead) - -
MRFG35003NT1

MRFG35003NT1

RF MOSFET PHEMT FET 12V PLD-1.5

NXP USA Inc.

5,288 -
MRFG35003NT1

数据表

- PLD-1.5 Tape & Reel (TR) Obsolete pHEMT FET - 11.5dB 12 V - - 55 mA 3.55GHz 3W 15 V - PLD-1.5 - Surface Mount
PD55008S-E

PD55008S-E

RF MOSFET LDMOS 12.5V PWRSO-10RF

STMicroelectronics

5,338 -
PD55008S-E

数据表

- PowerSO-10 Exposed Bottom Pad Tube Active LDMOS - 17dB 12.5 V 4A - 150 mA 500MHz 8W 40 V - PowerSO-10RF (Straight Lead) - -
A5G26S004NT6

A5G26S004NT6

RF MOSFET DFN

NXP USA Inc.

8,823 -
A5G26S004NT6

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - - -
PTVA120121M-V1-R1K

PTVA120121M-V1-R1K

RF MOSFET LDMOS 48V 10SON

MACOM Technology Solutions

2,104 -
PTVA120121M-V1-R1K

数据表

- 10-LDFN Exposed Pad Tape & Reel (TR) Not For New Designs LDMOS - 21.64dB 48 V 1µA - 50 mA 500MHz ~ 1.4GHz 15.62W 105 V - PG-SON-10 - -
C4H2350N05X

C4H2350N05X

RF MOSFET 48V 6DFN

Ampleon USA Inc.

6,053 -
C4H2350N05X

数据表

- 6-VDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) N-Channel 18.6dB 48 V 133µA - 10 mA 2.3GHz ~ 5GHz 5W 150 V - 6-DFN (4.5x4) - Surface Mount
A5G35S004NT6

A5G35S004NT6

RF MOSFET GAN 48V 6DFN

NXP USA Inc.

5,951 -
A5G35S004NT6

数据表

- 6-LDFN Exposed Pad Tape & Reel (TR) Active GaN - 16.9dB 48 V - - 12 mA 3.3GHz ~ 4.3GHz 24.5dBm 125 V - 6-PDFN (4x4.5) - Surface Mount
QPD2040D

QPD2040D

0.40 MM PWR PHEMT

Qorvo

9,596 -
QPD2040D

数据表

- Die Tray Active GaAs pHEMT - 14dB 2 V 129mA 1.1dB 19 mA 0Hz ~ 20GHz - 12 V - Die - Surface Mount
PD55008STR-E

PD55008STR-E

RF MOSFET LDMOS 12.5V PWRSO-10RF

STMicroelectronics

4,128 -
PD55008STR-E

数据表

- PowerSO-10 Exposed Bottom Pad Tape & Reel (TR) Obsolete LDMOS - 17dB 12.5 V 4A - 150 mA 500MHz 8W 40 V - PowerSO-10RF (Straight Lead) - -
PD54008S-E

PD54008S-E

RF MOSFET LDMOS 7.5V PWRSO-10RF

STMicroelectronics

5,853 -
PD54008S-E

数据表

- PowerSO-10 Exposed Bottom Pad Tube Obsolete LDMOS - 11.5dB 7.5 V 5A - 150 mA 500MHz 8W 25 V - PowerSO-10RF (Straight Lead) - -
PD84008-E

PD84008-E

RF MOSFET LDMOS 7.5V PWRSO-10RF

STMicroelectronics

6,883 -
PD84008-E

数据表

- PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) Tube Obsolete LDMOS - 16.2dB 7.5 V 7A - 250 mA 870MHz 2W 25 V - PowerSO-10RF (Formed Lead) - -
PD84008S-E

PD84008S-E

RF MOSFET 7.5V PWRSO-10RF

STMicroelectronics

6,853 -
PD84008S-E

数据表

- PowerSO-10 Exposed Bottom Pad Tube Obsolete MOSFET (Metal Oxide) N-Channel 16.2dB 7.5 V 7A - 250 mA 870MHz 2W 25 V - PowerSO-10RF (Straight Lead) - -
PTF180101M V1

PTF180101M V1

RF MOSFET LDMOS 28V RFP-10

Infineon Technologies

3,619 -
PTF180101M V1

数据表

GOLDMOS® 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Tape & Reel (TR) Discontinued at Digi-Key LDMOS - 16.5dB 28 V 1µA - 180 mA 1.99GHz 10W 65 V - PG-RFP-10 - Surface Mount
PTF210101M V1

PTF210101M V1

RF MOSFET LDMOS 28V RFP-10

Infineon Technologies

3,537 -
PTF210101M V1

数据表

GOLDMOS® 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Tape & Reel (TR) Obsolete LDMOS - 15dB 28 V 1µA - 180 mA 2.17GHz 10W 65 V - PG-RFP-10 - Surface Mount
PD57006S-E

PD57006S-E

RF MOSFET LDMOS 28V POWERSO-10RF

STMicroelectronics

4,829 -
PD57006S-E

数据表

- PowerSO-10 Exposed Bottom Pad Tube Obsolete LDMOS - 15dB 28 V 1A - 70 mA 945MHz 6W 65 V - PowerSO-10RF (Straight Lead) - -
PD84010TR-E

PD84010TR-E

RF MOSFET LDMOS 7.5V PWRSO-10RF

STMicroelectronics

3,534 -
PD84010TR-E

数据表

- PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) Tape & Reel (TR) Obsolete LDMOS - 16.3dB 7.5 V 8A - 300 mA 870MHz 2W 40 V - PowerSO-10RF (Formed Lead) - -
PD84010-E

PD84010-E

RF MOSFET LDMOS 7.5V PWRSO-10RF

STMicroelectronics

9,185 -
PD84010-E

数据表

- PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) Tube Obsolete LDMOS - 16.3dB 7.5 V 8A - 300 mA 870MHz 2W 40 V - PowerSO-10RF (Formed Lead) - -
PD84010S-E

PD84010S-E

RF MOSFET LDMOS 7.5V PWRSO-10RF

STMicroelectronics

9,320 -
PD84010S-E

数据表

- PowerSO-10 Exposed Bottom Pad Tube Obsolete LDMOS - 16.3dB 7.5 V 8A - 300 mA 870MHz 2W 40 V - PowerSO-10RF (Straight Lead) - -
QPD0007TR13

QPD0007TR13

3.4-3.8GHZ 15W 50V GAN SINGLE CH

Qorvo

9,048 -
QPD0007TR13

数据表

- 6-VDFN Exposed Pad Tape & Reel (TR) Active GaN - 18.4dB 48 V - - 32.5 mA 0Hz ~ 5GHz 20W 48 V - 6-DFN (4.5x4) - Surface Mount
QPD2060D

QPD2060D

0.60 MM PWR PHEMT

Qorvo

7,279 -
QPD2060D

数据表

- Die Tray Active GaAs pHEMT - 12dB 3 V 194mA 1.4dB 25 mA 0Hz ~ 20GHz - 12 V - Die - Surface Mount
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