富聪科技订单满¥1000免运费
关注我们:

单个场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 技术 配置 增益 电压 - 测试 电流额定值(安培) 噪声系数 电流 - 测试 频率 功率 - 输出 额定电压 等级 供应商设备封装 认证 安装类型

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 增益 电压 - 测试 电流额定值(安培) 噪声系数 电流 - 测试 频率 功率 - 输出 额定电压 等级 供应商设备封装 认证 安装类型
PD57006S-E

PD57006S-E

RF MOSFET LDMOS 28V POWERSO-10RF

STMicroelectronics

4,829 -
PD57006S-E

数据表

- PowerSO-10 Exposed Bottom Pad Tube Obsolete LDMOS - 15dB 28 V 1A - 70 mA 945MHz 6W 65 V - PowerSO-10RF (Straight Lead) - -
PD84010TR-E

PD84010TR-E

RF MOSFET LDMOS 7.5V PWRSO-10RF

STMicroelectronics

3,534 -
PD84010TR-E

数据表

- PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) Tape & Reel (TR) Obsolete LDMOS - 16.3dB 7.5 V 8A - 300 mA 870MHz 2W 40 V - PowerSO-10RF (Formed Lead) - -
PD84010-E

PD84010-E

RF MOSFET LDMOS 7.5V PWRSO-10RF

STMicroelectronics

9,185 -
PD84010-E

数据表

- PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) Tube Obsolete LDMOS - 16.3dB 7.5 V 8A - 300 mA 870MHz 2W 40 V - PowerSO-10RF (Formed Lead) - -
PD84010S-E

PD84010S-E

RF MOSFET LDMOS 7.5V PWRSO-10RF

STMicroelectronics

9,320 -
PD84010S-E

数据表

- PowerSO-10 Exposed Bottom Pad Tube Obsolete LDMOS - 16.3dB 7.5 V 8A - 300 mA 870MHz 2W 40 V - PowerSO-10RF (Straight Lead) - -
PD85006TR-E

PD85006TR-E

RF MOSFET LDMOS 13.6V PWRSO-10RF

STMicroelectronics

8,459 -
PD85006TR-E

数据表

- PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) Tape & Reel (TR) Obsolete LDMOS - 17dB 13.6 V 2A - 200 mA 870MHz 5W 40 V - PowerSO-10RF (Formed Lead) - -
PD55015STR-E

PD55015STR-E

RF MOSFET LDMOS 12.5V PWRSO-10RF

STMicroelectronics

6,944 -
PD55015STR-E

数据表

- PowerSO-10 Exposed Bottom Pad Tape & Reel (TR) Active LDMOS - 14dB 12.5 V 5A - 150 mA 500MHz 15W 40 V - PowerSO-10RF (Straight Lead) - -
PD20010-E

PD20010-E

RF MOSFET LDMOS 13.6V PWRSO-10RF

STMicroelectronics

5,823 -
PD20010-E

数据表

- PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) Tube Obsolete LDMOS - 11dB 13.6 V 5A - 150 mA 2GHz 10W 40 V - PowerSO-10RF (Formed Lead) - -
PD20010S-E

PD20010S-E

RF MOSFET LDMOS 13.6V PWRSO-10RF

STMicroelectronics

8,321 -
PD20010S-E

数据表

- PowerSO-10RF Exposed Bottom Pad (2 Straight Leads) Tube Obsolete LDMOS - 11dB 13.6 V 5A - 150 mA 2GHz 10W 40 V - PowerSO-10RF (Straight Lead) - -
PD85015-E

PD85015-E

RF MOSFET LDMOS 13.6V PWRSO-10RF

STMicroelectronics

4,776 -
PD85015-E

数据表

- PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) Tube Obsolete LDMOS - 16dB 13.6 V 5A - 150 mA 870MHz 15W 40 V - PowerSO-10RF (Formed Lead) - -
PD55015S-E

PD55015S-E

RF MOSFET LDMOS 12.5V PWRSO-10RF

STMicroelectronics

2,569 -
PD55015S-E

数据表

- PowerSO-10 Exposed Bottom Pad Tube Active LDMOS - 14dB 12.5 V 5A - 150 mA 500MHz 15W 40 V - PowerSO-10RF (Straight Lead) - -
共 230 条记录«上一页1... 56789101112...23下一页»
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户