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单个场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 技术 配置 增益 电压 - 测试 电流额定值(安培) 噪声系数 电流 - 测试 频率 功率 - 输出 额定电压 等级 供应商设备封装 认证 安装类型

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 增益 电压 - 测试 电流额定值(安培) 噪声系数 电流 - 测试 频率 功率 - 输出 额定电压 等级 供应商设备封装 认证 安装类型
BF2040RE6814HTSA1

BF2040RE6814HTSA1

RF MOSFET 5V SOT143R

Infineon Technologies

3,376 -
BF2040RE6814HTSA1

数据表

- SOT-143R Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N-Channel 23dB 5 V 40mA 1.6dB 15 mA 800MHz - 8 V - PG-SOT-143R-3D - Surface Mount
BF2040WE6814HTSA1

BF2040WE6814HTSA1

RF MOSFET 5V SOT343

Infineon Technologies

5,311 -
BF2040WE6814HTSA1

数据表

- SC-82A, SOT-343 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N-Channel 23dB 5 V 40mA 1.6dB 15 mA 800MHz - 8 V - PG-SOT343-3D - Surface Mount
BF5030WE6327HTSA1

BF5030WE6327HTSA1

RF MOSFET 3V SOT343

Infineon Technologies

6,426 -
BF5030WE6327HTSA1

数据表

- SC-82A, SOT-343 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N-Channel 24dB 3 V 25mA 1.3dB 10 mA 800MHz - 8 V - PG-SOT343-3D - Surface Mount
BF998RE6327HTSA1

BF998RE6327HTSA1

RF MOSFET 8V SOT143R

Infineon Technologies

6,198 -
BF998RE6327HTSA1

数据表

- SOT-143R Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N-Channel 28dB 8 V 30mA 2.8dB 10 mA 45MHz - 12 V - PG-SOT-143R-3D - Surface Mount
BF999E6327HTSA1

BF999E6327HTSA1

RF MOSFET 10V SOT23

Infineon Technologies

9,714 -
BF999E6327HTSA1

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N-Channel 27dB 10 V 30mA 2.1dB 10 mA 45MHz - 20 V - PG-SOT23 - Surface Mount
BG3123RE6327HTSA1

BG3123RE6327HTSA1

RF MOSFET 5V SOT363

Infineon Technologies

3,977 -
BG3123RE6327HTSA1

数据表

- 6-VSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 25dB 5 V 25mA, 20mA 1.8dB 14 mA 800MHz - 8 V - PG-SOT363-PO - Surface Mount
BG3130E6327HTSA1

BG3130E6327HTSA1

RF MOSFET 5V SOT363

Infineon Technologies

4,744 -
BG3130E6327HTSA1

数据表

- 6-VSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 24dB 5 V 25mA 1.3dB 14 mA 800MHz - 8 V - PG-SOT363-PO - Surface Mount
BG3130RE6327BTSA1

BG3130RE6327BTSA1

RF MOSFET 5V SOT363

Infineon Technologies

9,790 -
BG3130RE6327BTSA1

数据表

- 6-VSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 24dB 5 V 25mA 1.3dB 14 mA 800MHz - 8 V - PG-SOT363-PO - Surface Mount
BG 3230 E6327

BG 3230 E6327

RF MOSFET 5V SOT363

Infineon Technologies

8,717 -
BG 3230 E6327

数据表

- 6-VSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 24dB 5 V 25mA 1.3dB - 800MHz - 8 V - PG-SOT363-PO - Surface Mount
BG 5130R E6327

BG 5130R E6327

RF MOSFET 3V SOT363

Infineon Technologies

4,216 -
BG 5130R E6327

数据表

- 6-VSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 24dB 3 V 25mA 1.3dB 10 mA 800MHz - 8 V - PG-SOT363-PO - Surface Mount
PTF080101S V1

PTF080101S V1

RF MOSFET LDMOS 28V H-32259-2

Infineon Technologies

8,928 -
PTF080101S V1

数据表

GOLDMOS® H-32259-2 Tape & Reel (TR) Obsolete LDMOS - 18.5dB 28 V 1µA - 150 mA 960MHz 10W 65 V - H-32259-2 - Surface Mount
PTF180101S V1

PTF180101S V1

RF MOSFET LDMOS 28V H-32259-2

Infineon Technologies

5,992 -
PTF180101S V1

数据表

GOLDMOS® H-32259-2 Tape & Reel (TR) Obsolete LDMOS - 19dB 28 V 1µA - 180 mA 1.99GHz 10W 65 V - H-32259-2 - Surface Mount
PTF240101S V1

PTF240101S V1

RF MOSFET LDMOS 28V H-32259-2

Infineon Technologies

9,176 -
PTF240101S V1

数据表

GOLDMOS® H-32259-2 Tape & Reel (TR) Obsolete LDMOS - 16dB 28 V 1µA - 180 mA 2.68GHz 10W 65 V - H-32259-2 - Surface Mount
PTFA240451E V1

PTFA240451E V1

RF MOSFET LDMOS 28V H-30265-2

Infineon Technologies

9,904 -
PTFA240451E V1

数据表

GOLDMOS® 2-Flatpack, Fin Leads Tray Obsolete LDMOS - 14dB 28 V 10µA - 450 mA 2.48GHz 45W 65 V - H-30265-2 - Surface Mount
PTFA241301E V1

PTFA241301E V1

RF MOSFET LDMOS 28V H-30260-2

Infineon Technologies

3,994 -
PTFA241301E V1

数据表

GOLDMOS® 2-Flatpack, Fin Leads Tray Obsolete LDMOS - 14dB 28 V 10µA - 1.15 A 2.42GHz 130W 65 V - H-30260-2 - Surface Mount
PTFA260451E V1

PTFA260451E V1

RF MOSFET LDMOS 28V H-30265-2

Infineon Technologies

4,256 -
PTFA260451E V1

数据表

GOLDMOS® 2-Flatpack, Fin Leads Tray Obsolete LDMOS - 15dB 28 V 10µA - 500 mA 2.68GHz 45W 65 V - H-30265-2 - Surface Mount
NE3511S02-A

NE3511S02-A

RF MOSFET GAAS HJ-FET 2V S02

CEL

7,302 -
NE3511S02-A

数据表

- 4-SMD, Flat Leads Bulk Obsolete GaAs HJ-FET - 13.5dB 2 V 70mA 0.3dB 10 mA 12GHz - 4 V - S02 - -
NE3514S02-A

NE3514S02-A

RF MOSFET GAAS HJ-FET 2V S02

CEL

5,742 -
NE3514S02-A

数据表

- 4-SMD, Flat Leads Strip Obsolete GaAs HJ-FET - 10dB 2 V 70mA 0.75dB 10 mA 20GHz - 4 V - S02 - -
MPF102G

MPF102G

RF MOSFET JFET 25V TO92

onsemi

4,802 -
MPF102G

数据表

- TO-226-3, TO-92-3 Long Body Bulk Obsolete JFET N-Channel - - 20mA - - - - 25 V - TO-92 (TO-226) - Through Hole
MRF7S19170HSR3

MRF7S19170HSR3

RF MOSFET LDMOS 28V NI880S

NXP USA Inc.

4,785 -
MRF7S19170HSR3

数据表

- NI-880S Tape & Reel (TR) Obsolete LDMOS - 17.2dB 28 V - - 1.4 A 1.99GHz 50W 65 V - NI-880S - Surface Mount
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