富聪科技订单满¥1000免运费
关注我们:

单个场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 技术 配置 增益 电压 - 测试 电流额定值(安培) 噪声系数 电流 - 测试 频率 功率 - 输出 额定电压 等级 供应商设备封装 认证 安装类型

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 增益 电压 - 测试 电流额定值(安培) 噪声系数 电流 - 测试 频率 功率 - 输出 额定电压 等级 供应商设备封装 认证 安装类型
GTRB424908FC/1-V1-R0

GTRB424908FC/1-V1-R0

RF MOSFET HEMT H-37248KC-6

MACOM Technology Solutions

6,164 -
GTRB424908FC/1-V1-R0

数据表

- H-37248KC-6/2 Tape & Reel (TR) Active HEMT - 12dB - - - - 3.7GHz ~ 4GHz 450W 48 V - H-37248KC-6/2 - Surface Mount
GTRB424908FC/1-V1-R2

GTRB424908FC/1-V1-R2

RF MOSFET HEMT H-37248KC-6

MACOM Technology Solutions

4,066 -
GTRB424908FC/1-V1-R2

数据表

- H-37248KC-6/2 Tape & Reel (TR) Active HEMT - 12dB - - - - 3.7GHz ~ 4GHz 450W 48 V - H-37248KC-6/2 - Surface Mount
MRF9180R6

MRF9180R6

RF MOSFET LDMOS 26V NI1230

NXP USA Inc.

7,839 -
MRF9180R6

数据表

- NI-1230 Tape & Reel (TR) Obsolete LDMOS - 17.5dB 26 V - - 1.4 A 880MHz 170W 65 V - NI-1230 - Chassis Mount
RF4L10700CB4

RF4L10700CB4

RF MOSFET LDMOS 40V D4E

STMicroelectronics

8,999 -
RF4L10700CB4

数据表

- D4E Bulk Active LDMOS - 15dB 40 V 1µA - 100 mA 1GHz 700W 90 V - D4E - Chassis Mount
RF5L1214750CB4

RF5L1214750CB4

RF MOSFET LDMOS 50V D4E

STMicroelectronics

3,477 -
RF5L1214750CB4

数据表

- D4E Bulk Active LDMOS - 15dB 50 V 10µA - 400 mA 1.2GHz ~ 1.4GHz 750W 110 V - D4E - Chassis Mount
RF5L08600CB4

RF5L08600CB4

RF MOSFET LDMOS 50V D4E

STMicroelectronics

4,388 -
RF5L08600CB4

数据表

- D4E Bulk Last Time Buy LDMOS - 19.5dB 50 V 1µA - 110 mA 400MHz ~ 1GHz 650W 115 V - D4E - Chassis Mount
RF2L24280CB4

RF2L24280CB4

RF MOSFET LDMOS 28V D4E

STMicroelectronics

9,511 -
RF2L24280CB4

数据表

- D4E Bulk Active LDMOS - 13dB 28 V 1µA - 10 mA 2.4GHz ~ 2.5GHz 280W 65 V - D4E - Chassis Mount
RF5L0912750CB4

RF5L0912750CB4

RF MOSFET LDMOS 50V D4E

STMicroelectronics

8,389 -
RF5L0912750CB4

数据表

- D4E Bulk Active LDMOS - 15dB 50 V 1µA - 150 mA 960MHz ~ 1.215GHz 750W 110 V - D4E - Chassis Mount
RF4L15400CB4

RF4L15400CB4

RF MOSFET LDMOS 40V D4E

STMicroelectronics

3,413 -
RF4L15400CB4

数据表

- D4E Bulk Active LDMOS - 18.5dB 40 V 1µA - 1.5 A 1.2GHz ~ 1.5GHz 400W 90 V - D4E - Chassis Mount
RF5L10111K0CB4

RF5L10111K0CB4

RF MOSFET LDMOS 50V D4E

STMicroelectronics

5,899 -
RF5L10111K0CB4

数据表

- D4E Bulk Active LDMOS - 14.5dB 50 V 1µA - 600 mA 1.03GHz ~ 1.09GHz 1000W 110 V - D4E - Chassis Mount
MRF6VP2600HR6

MRF6VP2600HR6

RF MOSFET LDMOS 50V NI1230

NXP USA Inc.

9,257 -
MRF6VP2600HR6

数据表

- NI-1230 Tape & Reel (TR) Obsolete LDMOS Dual 25dB 50 V - - 2.6 A 225MHz 125W 110 V - NI-1230 - Chassis Mount
BLS6G2731S-120,112

BLS6G2731S-120,112

RF MOSFET LDMOS 32V SOT502B

Ampleon USA Inc.

2,587 -
BLS6G2731S-120,112

数据表

- SOT-502B Tray Discontinued at Digi-Key LDMOS - 13.5dB 32 V 33A - 100 mA 2.7GHz ~ 3.1GHz 120W 60 V - SOT502B - Chassis Mount
GTRA364002FC-V1-R2

GTRA364002FC-V1-R2

RF MOSFET HEMT 48V H-37248C-4

MACOM Technology Solutions

7,167 -
GTRA364002FC-V1-R2

数据表

GaN H-37248C-4 Tape & Reel (TR) Active HEMT - 13dB 48 V - - 220 mA 3.4GHz ~ 3.6GHz 400W 125 V - H-37248C-4 - Surface Mount
MRF9180R5

MRF9180R5

RF MOSFET LDMOS 26V NI1230

NXP USA Inc.

2,071 -
MRF9180R5

数据表

- NI-1230 Tape & Reel (TR) Obsolete LDMOS - 17.5dB 26 V - - 1.4 A 880MHz 170W 65 V - NI-1230 - Chassis Mount
BLL6H0514LS-130,11

BLL6H0514LS-130,11

RF MOSFET LDMOS 50V CDFM2

Ampleon USA Inc.

2,857 -
BLL6H0514LS-130,11

数据表

- SOT-1135B Tray Discontinued at Digi-Key LDMOS - 17dB 50 V 18A - 50 mA 1.2GHz ~ 1.4GHz 130W 100 V - CDFM2 - Chassis Mount
MRF175GV

MRF175GV

RF MOSFET 28V 375-04

MACOM Technology Solutions

6,072 -
MRF175GV

数据表

- 375-04 Tray Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Source 14dB 28 V 26A - 100 mA 225MHz 200W 65 V - 375-04, Style 2 - -
ART2K0PEZ

ART2K0PEZ

RF MOSFET LDMOS 65V OMP1230

Ampleon USA Inc.

3,789 -
ART2K0PEZ

数据表

- OMP-1230-4F-1 Tray Active LDMOS Dual, Common Source 27.4dB 65 V 2.8µA - 100 mA 400MHz 2000W 200 V - OMP-1230-4F-1 - Surface Mount
ART2K0FESJ

ART2K0FESJ

RF MOSFET LDMOS 65V SOT539BN

Ampleon USA Inc.

6,731 -
ART2K0FESJ

数据表

- SOT-539BN Tray Active LDMOS (Dual), Common Source 2 N-Channel 28.9dB 65 V 1.4µA - 600 mA 1MHz ~ 400MHz 2000W 200 V - SOT539BN - Surface Mount
QPD1015

QPD1015

DC-3.7 GHZ, 65W, 50V GAN RF PWR

Qorvo

4,288 -
QPD1015

数据表

- 2-Flatpack, Fin Leads Tray Active HEMT P-Channel 20dB 50 V - - 65 mA 3.7GHz 65W 145 V - 2L-FLG - Surface Mount
QPD1015L

QPD1015L

DC-3.7 GHZ, 65W, 50V GAN RF PWR

Qorvo

7,247 -
QPD1015L

数据表

- NI-360 Tray Active HEMT N-Channel 20dB - 10.2A - - 3.7GHz 65W 50 V - NI-360 - Chassis Mount
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户