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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
ZVN4424GTC

ZVN4424GTC

MOSFET N-CH 240V 500MA SOT223

Diodes Incorporated

2,988 -
ZVN4424GTC

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 500mA (Ta) 2.5V, 10V 5.5Ohm @ 500mA, 10V Surface Mount 1.8V @ 1mA - 240 V ±40V 200 pF @ 25 V - - SOT-223-3 - 2.5W (Ta) -55°C ~ 150°C (TJ)
ZVP4424GTC

ZVP4424GTC

MOSFET P-CH 240V 480MA SOT223

Diodes Incorporated

2,279 -
ZVP4424GTC

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 480mA (Ta) 3.5V, 10V 9Ohm @ 200mA, 10V Surface Mount 2V @ 1mA - 240 V ±40V 200 pF @ 25 V - - SOT-223-3 - 2.5W (Ta) -55°C ~ 150°C (TJ)
DMN3009SFGQ-13

DMN3009SFGQ-13

MOSFET N-CH 30V 16A PWRDI3333

Diodes Incorporated

8,352 -
DMN3009SFGQ-13

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 16A (Ta), 45A (Tc) 4.5V, 10V 5.5mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 42 nC @ 10 V 30 V ±20V 2000 pF @ 15 V AEC-Q101 - POWERDI3333-8 Automotive 900mW (Ta) -55°C ~ 150°C (TJ)
DMTH43M8LPSWQ-13

DMTH43M8LPSWQ-13

MOSFET BVDSS: 31V~40V POWERDI506

Diodes Incorporated

6,775 -
DMTH43M8LPSWQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 22A (Ta), 100A (Tc) 5V, 10V 3.3mOhm @ 20A, 10V Surface Mount, Wettable Flank 2.5V @ 250µA 49 nC @ 10 V 40 V ±20V 3367 pF @ 20 V AEC-Q101 - PowerDI5060-8 (Type UX) Automotive 2.7W (Ta), 83.3W (Tc) -55°C ~ 175°C (TJ)
DMT64M1LPSW-13

DMT64M1LPSW-13

MOSFET BVDSS: 61V~100V POWERDI50

Diodes Incorporated

3,734 -
DMT64M1LPSW-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 21.8A (Ta), 81.7A (Tc) 4.5V, 10V 4.4mOhm @ 30A, 10V Surface Mount, Wettable Flank 2.5V @ 250µA 51.4 nC @ 10 V 65 V ±20V 2626 pF @ 30 V - - PowerDI5060-8 (Type UX) - 3.14W (Ta), 44W (Tc) -55°C ~ 150°C (TJ)
DMN2005UFGQ-7

DMN2005UFGQ-7

MOSFET N-CH 20V 18A PWRDI3333

Diodes Incorporated

2,265 -
DMN2005UFGQ-7

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 18A (Ta), 50A (Tc) 2.5V, 4.5V 4.6mOhm @ 13.5A, 4.5V Surface Mount 1.2V @ 250µA 164 nC @ 10 V 20 V ±12V 6495 pF @ 10 V AEC-Q101 - POWERDI3333-8 Automotive 1.05W (Ta) -55°C ~ 150°C (TJ)
DMTH4007LPSWQ-13

DMTH4007LPSWQ-13

MOSFET BVDSS: 31V~40V POWERDI506

Diodes Incorporated

6,956 -
DMTH4007LPSWQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15A (Ta), 85A (Tc) 4.5V, 10V 6.5mOhm @ 20A, 10V Surface Mount, Wettable Flank 3V @ 250µA 29.1 nC @ 10 V 40 V ±20V 1895 pF @ 30 V AEC-Q101 - PowerDI5060-8 (Type UX) Automotive 2.7W (Ta), 83.3W (Tc) -55°C ~ 175°C (TJ)
DMT67M8LCG-7

DMT67M8LCG-7

MOSFET N-CH 60V 16A/64.6A 8DFN

Diodes Incorporated

9,766 -
DMT67M8LCG-7

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 16A (Ta), 64.6A (Tc) 4.5V, 10V 5.7mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 37.5 nC @ 10 V 60 V ±20V 2130 pF @ 30 V - - V-DFN3333-8 (Type B) - 900mW (Ta) -55°C ~ 150°C (TJ)
DMT6009LJ3

DMT6009LJ3

MOSFET N-CH 60V 74.5A TO251

Diodes Incorporated

8,743 -
DMT6009LJ3

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 74.5A (Tc) 4.5V, 10V 10mOhm @ 13.5A, 10V Through Hole 2V @ 250µA 33.5 nC @ 10 V 60 V ±16V 1925 pF @ 30 V - - TO-251 (Type TH) - 2.9W (Ta), 83.3W (Tc) -55°C ~ 150°C (TJ)
DMT8012LPS-13

DMT8012LPS-13

MOSFET N-CH 80V 9A/65A PWRDI5060

Diodes Incorporated

6,223 -
DMT8012LPS-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9A (Ta), 65A (Tc) 4.5V, 10V 17mOhm @ 12A, 10V Surface Mount 3V @ 250µA 34 nC @ 10 V 80 V ±20V 1949 pF @ 40 V - - PowerDI5060-8 - 2.1W (Ta), 113W (Tc) -55°C ~ 150°C (TJ)
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