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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
CPH6318-TL-E

CPH6318-TL-E

MOSFET P-CH 12V 6A 6CPH

onsemi

90,000 -
CPH6318-TL-E

数据表

- SOT-23-6 Thin, TSOT-23-6 Bulk Active P-Channel MOSFET (Metal Oxide) 6A (Ta) - 34mOhm @ 3A, 4.5V Surface Mount 1V @ 1mA 22 nC @ 4.5 V 12 V ±8V 1900 pF @ 6 V - - 6-CPH - 1.6W (Ta) 150°C
MCH5801-TL-E

MCH5801-TL-E

NCH+SBD 1.8V DRIVE SERIES

onsemi

81,000 -
MCH5801-TL-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
SCH1337-TL-W

SCH1337-TL-W

MOSFET P-CH 30V 2A SOT563/SCH6

onsemi

9,281 -
SCH1337-TL-W

数据表

- SOT-563, SOT-666 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 2A (Ta) 4V, 10V 150mOhm @ 1A, 10V Surface Mount 2.6V @ 1mA 3.9 nC @ 10 V 30 V ±20V 172 pF @ 10 V - - SOT-563/SCH6 - 800mW (Ta) 150°C (TJ)
MCH6422-TL-E

MCH6422-TL-E

NCH 2.5V DRIVE SERIES

onsemi

66,000 -
MCH6422-TL-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
MCH5802-TL-E

MCH5802-TL-E

P-CHANNEL SILICON MOSFET

Sanyo

57,000 -
MCH5802-TL-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
CPH3314-TL-H

CPH3314-TL-H

P-CHANNEL SILICON MOSFET

onsemi

54,000 -
CPH3314-TL-H

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
MCH3476-TL-HX

MCH3476-TL-HX

NCH 1.8V DRIVE SERIES

onsemi

54,000 -
MCH3476-TL-HX

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
MCH3406-TL-E

MCH3406-TL-E

N-CHANNEL POWER MOSFET

onsemi

52,600 -
MCH3406-TL-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
NTGS3441BT1G

NTGS3441BT1G

MOSFET P-CH 20V 2.2A 6TSOP

onsemi

9,126 -
NTGS3441BT1G

数据表

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 2.2A (Ta) 2.5V, 4.5V 90mOhm @ 3A, 4.5V Surface Mount 900mV @ 250µA 9 nC @ 4.5 V 20 V ±8V 630 pF @ 10 V - - 6-TSOP - 700mW (Ta) -55°C ~ 150°C (TJ)
MCH5802-TL-E-ON

MCH5802-TL-E-ON

P-CHANNEL SILICON MOSFET

onsemi

48,000 -
MCH5802-TL-E-ON

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
2SK3288ENTL-E

2SK3288ENTL-E

N-CHANNEL MOSFET

Renesas Electronics Corporation

45,000 -
2SK3288ENTL-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
SCH1334-TL-H

SCH1334-TL-H

MOSFET P-CH 12V 1.6A 6SCH

onsemi

7,788 -
SCH1334-TL-H

数据表

- SOT-563, SOT-666 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 1.6A (Ta) 1.8V, 4.5V 215mOhm @ 800mA, 4.5V Surface Mount 1.3V @ 1mA 1.6 nC @ 4.5 V 12 V ±10V 120 pF @ 6 V - - 6-SCH - 800mW (Ta) 150°C (TJ)
5HN02C-TB-E

5HN02C-TB-E

N-CHANNEL SMALL SIGNAL MOSFET

onsemi

39,000 -
5HN02C-TB-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
MCH3411-TL-E

MCH3411-TL-E

NCH 2.5V DRIVE SERIES

onsemi

36,000 -
MCH3411-TL-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
MCH5805-TL-E

MCH5805-TL-E

PCH+SBD 4V DRIVE SERIES

onsemi

36,000 -
MCH5805-TL-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
VN2222LLRL

VN2222LLRL

SMALL SIGNAL N-CHANNEL MOSFET

onsemi

30,204 -
VN2222LLRL

数据表

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Bulk Active N-Channel MOSFET (Metal Oxide) 150mA 10V 7.5Ohm @ 500mA, 10V Through Hole 2.5V @ 1mA - 60 V ±20V 60 pF @ 25 V - - TO-92 (TO-226) - 400mW (Ta) -55°C ~ 150°C (TJ)
2SK2552B-T1-AT

2SK2552B-T1-AT

N-CHANNEL SMALL SIGNAL MOSFET

Renesas Electronics Corporation

30,000 -
2SK2552B-T1-AT

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
NTHS5443T1H

NTHS5443T1H

PFET CHPFT 20V 4.9A 65MOH

onsemi

27,000 -
NTHS5443T1H

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
NTHD4P02FT1

NTHD4P02FT1

MOSFET/SCHOTTKY P-CH 20V CHIPFET

onsemi

20,955 -
NTHD4P02FT1

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
PMN20EN,115

PMN20EN,115

MOSFET N-CH 30V 6.7A 6TSOP

NXP USA Inc.

9,561 -
PMN20EN,115

数据表

- SC-74, SOT-457 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 6.7A (Tj) 4.5V, 10V 20mOhm @ 6.7A, 10V Surface Mount 2.5V @ 250µA 18.6 nC @ 10 V 30 V ±20V 630 pF @ 15 V - - SC-74 - 545mW (Ta) -55°C ~ 150°C (TJ)
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