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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
NP82N055NUG-S18-AY

NP82N055NUG-S18-AY

MOSFET N-CH 55V 82A TO262

NEC Corporation

550 -
NP82N055NUG-S18-AY

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 82A (Tc) - 6mOhm @ 41A, 10V Through Hole 4V @ 250µA 160 nC @ 10 V 55 V - 9600 pF @ 25 V - - TO-262 - 1.8W (Ta), 143W (Tc) 175°C (TJ)
NP82N055MUG-S18-AY

NP82N055MUG-S18-AY

MOSFET N-CH 55V 82A TO220

NEC Corporation

500 -
NP82N055MUG-S18-AY

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 82A (Tc) - 6mOhm @ 41A, 10V Through Hole 4V @ 250µA 160 nC @ 10 V 55 V - 9600 pF @ 25 V - - TO-220 - 1.8W (Ta), 143W (Tc) 175°C (TJ)
NP82N06NLG-S18-AY

NP82N06NLG-S18-AY

MOSFET N-CH 60V 82A TO262

NEC Corporation

4,100 -
NP82N06NLG-S18-AY

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 82A (Tc) - 7.4mOhm @ 41A, 10V Through Hole 2.5V @ 250µA 160 nC @ 10 V 60 V - 8550 pF @ 25 V - - TO-262 - 1.8W (Ta), 143W (Tc) 175°C (TJ)
NP82N04MDG-S18-AY

NP82N04MDG-S18-AY

MOSFET N-CH 40V 82A TO220-3

NEC Corporation

4,700 -
NP82N04MDG-S18-AY

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 82A (Tc) - 4.2mOhm @ 41A, 10V Through Hole 2.5V @ 250µA 150 nC @ 10 V 40 V - 9000 pF @ 25 V - - TO-220-3 - 1.8W (Ta), 143W (Tc) 175°C (TJ)
NP82N04NLG-S18-AY

NP82N04NLG-S18-AY

MOSFET N-CH 40V 82A TO262

NEC Corporation

850 -
NP82N04NLG-S18-AY

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 82A (Tc) - 4.2mOhm @ 41A, 10V Through Hole 2.5V @ 250µA 150 nC @ 10 V 40 V - 9000 pF @ 25 V - - TO-262 - 1.8W (Ta), 143W (Tc) 175°C (TJ)
NP82N04NDG-S18-AY

NP82N04NDG-S18-AY

MOSFET N-CH 40V 82A 3LDPAK

NEC Corporation

800 -
NP82N04NDG-S18-AY

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 82A (Tc) - 4.2mOhm @ 41A, 10V Through Hole 2.5V @ 250µA 150 nC @ 10 V 40 V ±20V 9000 pF @ 25 V AEC-Q101 - TO-263 (MP-25SK) Automotive 1.8W (Ta), 143W (Tc) 175°C
2SJ606-ZK-E1-AY

2SJ606-ZK-E1-AY

P-CHANNEL SWITCHING POWER MOSFET

NEC Corporation

750 -
2SJ606-ZK-E1-AY

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active P-Channel MOSFET (Metal Oxide) 83A 10V 15mOhm @ 42A, 10V Surface Mount 2.5V @ 1mA 120 nC @ 10 V 60 V ±20V 4800 pF @ 10 V - - TO-220SMD - 120W 150°C (TJ)
FS70UMJ-06F

FS70UMJ-06F

70A, 60V, N-CHANNEL MOSFET

NEC Corporation

288 -
FS70UMJ-06F

数据表

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 70A (Tc) 4V, 10V 7mOhm @ 36A, 10V Through Hole 2V @ 1mA - 60 V ±20V 8500 pF @ 10 V - - TO-220 - 125W (Tc) -55°C ~ 150°C
NP32N055HLE-AZ

NP32N055HLE-AZ

32A, 55V, 0.033OHM, N-CHANNEL ,

NEC Corporation

1,000 -
NP32N055HLE-AZ

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 32A (Ta) 4.5V, 10V 24mOhm @ 16A, 10V Through Hole 2.5V @ 250µA 41 nC @ 10 V 55 V ±20V 2000 pF @ 25 V - - TO-251 (MP-3) - 1.2W (Ta), 66W (Tc) 175°C
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