| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AMRA10NMOSFET N-CH 100V 62.7A DFN5X6 Analog Power Inc. |
500 | - |
|
数据表 |
- | 8-PowerVDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 12.4A (Ta), 62.7A (Tc) | 6.5V, 10V | 11mOhm @ 12A, 10V | Surface Mount | 1V @ 250µA | 21 nC @ 6.5 V | 100 V | ±20V | 1248 pF @ 50 V | - | - | 8-DFN (5x6) | - | 2.5W (Ta), 64.8W (Tc) | -55°C ~ 150°C (TJ) |
|
AM30P20-500PMOSFET P-CH -200V 30A TO-220 Analog Power Inc. |
800 | - |
|
数据表 |
- | TO-220-3 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 5.5V, 10V | 500mOhm @ 28A, 10V | Through Hole | 1V @ 250µA | 28 nC @ 5.5 V | 200 V | ±20V | 1852 pF @ 15 V | - | - | TO-220AB | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
AM7432N-CTMOSFET N-CH 30V 27A DFN5x6 Analog Power Inc. |
1,000 | - |
|
数据表 |
- | DFN5x6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 27A (Ta) | 2.5V, 4.5V | 5.9mOhm @ 19.1A, 2.5V | Surface Mount | 400mV @ 250µA (Min) | 43 nC @ 4.5 V | 30 V | ±12V | 5146 pF @ 15 V | - | - | DFN5x6 | - | 5W (Ta) | -55°C ~ 150°C (TJ) |
|
AMS441PMOSFET P-CH -40V 50A DFN3X3 Analog Power Inc. |
100 | - |
|
数据表 |
- | 8-PowerWDFN | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 20A (Ta), 50A (Tc) | 4.5V, 10V | 7.5mOhm @ 10A, 10V | Surface Mount | 1V @ 250µA | 70 nC @ 4.5 V | 40 V | ±20V | 4147 pF @ 15 V | - | - | 8-DFN (3.3x3.3) | - | 4.6W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) |
|
AM70N25-50BMOSFET N-CH 250V 62A TO-263 Analog Power Inc. |
40 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
AMTP65H150G4LSGBGAN FET N-CH 650V 13A DFN8X8 Analog Power Inc. |
35 | - |
|
数据表 |
- | 4-PowerTSFN | Bulk | Active | N-Channel | GaNFET (Gallium Nitride) | 13A (Tc) | 10V | 180mOhm @ 10A, 10V | Surface Mount | 1V @ 250µA | 8.8 nC @ 6 V | 650 V | ±18V | 760 pF @ 400 V | - | - | 4-DFN (8x8) | - | 52W (Tc) | -55°C ~ 150°C (TJ) |