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首页 > 产品 > 分立半导体产品 > 晶体管 > 场效应晶体管（FETs）、金属氧化物半导体场效应晶体管（MOSFETs） > 场效应晶体管（FETs）、MOSFETs

场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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图片	厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
	AS1M040120T N-CHANNEL SILICON CARBIDE POWER ANBON SEMICONDUCTOR (INT'L) LIMITED	1	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	60A (Tc)	20V	55mOhm @ 40A, 20V	Through Hole	4V @ 10mA	142 nC @ 20 V	1200 V	+25V, -10V	2946 pF @ 1000 V	-	-	TO-247-4	-	330W (Tc)	-55°C ~ 150°C (TJ)
	AS1M025120P N-CHANNEL SILICON CARBIDE POWER ANBON SEMICONDUCTOR (INT'L) LIMITED	124	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	90A (Tc)	20V	34mOhm @ 50A, 20V	Through Hole	4V @ 15mA	195 nC @ 20 V	1200 V	+25V, -10V	3600 pF @ 1000 V	-	-	TO-247-3	-	463W (Tc)	-55°C ~ 150°C (TJ)
	ASZM040120T N-CHANNEL SILICON CARBIDE POWER ANBON SEMICONDUCTOR (INT'L) LIMITED	30	-	询价单	数据表	-	TO-247-4	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	68A (Tc)	18V, 20V	32mOhm @ 40A, 20V	Through Hole	3.6V @ 9.5mA	87 nC @ 18 V	1200 V	+25V, -10V	2820 pF @ 1000 V	-	-	TO-247-4	-	340W (Tc)	-55°C ~ 175°C (TJ)
	AS1M080120P N-CHANNEL SILICON CARBIDE POWER ANBON SEMICONDUCTOR (INT'L) LIMITED	78	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	36A (Tc)	20V	98mOhm @ 20A, 20V	Through Hole	4V @ 5mA	79 nC @ 20 V	1200 V	+25V, -10V	1475 pF @ 1000 V	-	-	TO-247-3	-	192W (Tc)	-55°C ~ 150°C (TJ)
	AS2M040120P N-CHANNEL SILICON CARBIDE POWER ANBON SEMICONDUCTOR (INT'L) LIMITED	50	-	询价单	数据表	-	TO-247-3	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	60A (Tc)	20V	55mOhm @ 40A, 20V	Through Hole	4V @ 10mA	142 nC @ 20 V	1200 V	+25V, -10V	2946 pF @ 1000 V	-	-	TO-247-3	-	330W (Tc)	-55°C ~ 150°C (TJ)
	AS1M025120T N-CHANNEL SILICON CARBIDE POWER ANBON SEMICONDUCTOR (INT'L) LIMITED	13	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	65A (Tc)	20V	34mOhm @ 50A, 20V	Through Hole	4V @ 15mA	195 nC @ 20 V	1200 V	+25V, -10V	4200 pF @ 1000 V	-	-	TO-247-4	-	370W (Tc)	-55°C ~ 150°C (TJ)

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