ANBON SEMICONDUCTOR (INT'L) LIMITED|场效应晶体管（FETs）、MOSFETs - 页 1

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
2N7002EY N-CHANNEL SMD MOSFET ESD PROTECT ANBON SEMICONDUCTOR (INT'L) LIMITED	74,034	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	340mA (Ta)	4.5V, 10V	5Ohm @ 300mA, 10V	Surface Mount	2.5V @ 250µA	2.4 nC @ 10 V	60 V	±20V	18 pF @ 30 V	-	-	SOT-23	-	350mW (Ta)	150°C (TJ)
BSS123 N-CHANNEL ENHANCEMENT MODE MOSFE ANBON SEMICONDUCTOR (INT'L) LIMITED	71,808	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	200mA (Ta)	4.5V, 10V	5Ohm @ 200mA, 10V	Surface Mount	2.5V @ 250µA	1.8 nC @ 10 V	100 V	±20V	14 pF @ 50 V	-	-	SOT-23	-	350mW (Ta)	150°C (TJ)
BSS138 N-CHANNEL ENHANCEMENT MODE MOSFE ANBON SEMICONDUCTOR (INT'L) LIMITED	152,828	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	220mA (Ta)	4.5V, 10V	3Ohm @ 500mA, 10V	Surface Mount	1.6V @ 250µA	-	50 V	±20V	27 pF @ 25 V	-	-	SOT-23	-	350mW (Ta)	150°C (TJ)
BSS84 P-CHANNEL ENHANCEMENT MODE MOSFE ANBON SEMICONDUCTOR (INT'L) LIMITED	111,207	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	130mA (Ta)	4.5V, 10V	8Ohm @ 150mA, 10V	Surface Mount	2.5V @ 250µA	-	50 V	±20V	30 pF @ 30 V	-	-	SOT-23	-	225mW (Ta)	150°C (TJ)
AS2302 N-CHANNEL ENHANCEMENT MODE MOSFE ANBON SEMICONDUCTOR (INT'L) LIMITED	16,423	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	3A (Ta)	2.5V, 4.5V	55mOhm @ 3A, 4.5V	Surface Mount	1.25V @ 250µA	3.81 nC @ 4.5 V	20 V	±10V	220 pF @ 10 V	-	-	SOT-23	-	700mW (Ta)	150°C (TJ)
AS2312 N-CHANNEL ENHANCEMENT MODE MOSFE ANBON SEMICONDUCTOR (INT'L) LIMITED	47,301	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	6.8A (Ta)	1.8V, 4.5V	18mOhm @ 6.8A, 4.5V	Surface Mount	1V @ 250µA	11.05 nC @ 4.5 V	20 V	±10V	888 pF @ 10 V	-	-	SOT-23	-	1.2W (Ta)	150°C (TJ)
AS2324 N-CHANNEL ENHANCEMENT MODE MOSFE ANBON SEMICONDUCTOR (INT'L) LIMITED	28,774	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	2A (Ta)	4.5V, 10V	280mOhm @ 2A, 10V	Surface Mount	3V @ 250µA	5.3 nC @ 10 V	100 V	±20V	330 pF @ 50 V	-	-	SOT-23	-	1.2W (Ta)	150°C (TJ)
AS3401 P-CHANNEL ENHANCEMENT MODE MOSFE ANBON SEMICONDUCTOR (INT'L) LIMITED	16,991	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	4.4A (Ta)	2.5V, 10V	55mOhm @ 4.4A, 10V	Surface Mount	1.4V @ 250µA	7.2 nC @ 10 V	30 V	±12V	680 pF @ 15 V	-	-	SOT-23	-	1.2W (Ta)	150°C (TJ)
AS3400 N-CHANNEL ENHANCEMENT MODE MOSFE ANBON SEMICONDUCTOR (INT'L) LIMITED	5,701	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	5.6A (Ta)	2.5V, 10V	27mOhm @ 5.6A, 10V	Surface Mount	1.5V @ 250µA	4.8 nC @ 4.5 V	30 V	±12V	535 pF @ 15 V	-	-	SOT-23	-	1.2W (Ta)	150°C (TJ)
AS6004 P-CHANNEL ENHANCEMENT MODE MOSFE ANBON SEMICONDUCTOR (INT'L) LIMITED	14,691	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	4A (Ta)	4.5V, 10V	120mOhm @ 4A, 10V	Surface Mount	3V @ 250µA	25 nC @ 10 V	60 V	±20V	930 pF @ 30 V	-	-	SOT-23-3L	-	1.5W (Ta)	150°C (TJ)