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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IXTY1R6N50D2

IXTY1R6N50D2

MOSFET N-CH 500V 1.6A TO252

Littelfuse Inc.

5,491 -
IXTY1R6N50D2

数据表

Depletion TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel, Depletion Mode MOSFET (Metal Oxide) 1.6A (Tc) - 2.3Ohm @ 800mA, 0V Surface Mount - 23.7 nC @ 5 V 500 V ±20V 645 pF @ 25 V - - TO-252AA - 100W (Tc) -55°C ~ 150°C (TJ)
IXTY08N100D2

IXTY08N100D2

MOSFET N-CH 1000V 800MA TO252

Littelfuse Inc.

7,934 -
IXTY08N100D2

数据表

Depletion TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel, Depletion Mode MOSFET (Metal Oxide) 800mA (Tc) - 21Ohm @ 400mA, 0V Surface Mount - 14.6 nC @ 5 V 1000 V ±20V 325 pF @ 25 V - - TO-252AA - 60W (Tc) -55°C ~ 150°C (TJ)
IXTY1R6N50D2-TRL

IXTY1R6N50D2-TRL

MOSFET N-CH 500V 1.6A TO252AA

Littelfuse Inc.

5,128 -
IXTY1R6N50D2-TRL

数据表

Depletion TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel, Depletion Mode MOSFET (Metal Oxide) 1.6A (Tj) 0V 2.3Ohm @ 800mA, 0V Surface Mount 4.5V @ 250µA 23.7 nC @ 5 V 500 V ±20V 645 pF @ 25 V - - TO-252AA - 100W (Tc) -55°C ~ 150°C (TJ)
IXTP3N100D2

IXTP3N100D2

MOSFET N-CH 1000V 3A TO220AB

Littelfuse Inc.

3,480 -
IXTP3N100D2

数据表

Depletion TO-220-3 Tube Active N-Channel, Depletion Mode MOSFET (Metal Oxide) 3A (Tc) - 5.5Ohm @ 1.5A, 0V Through Hole - 37.5 nC @ 5 V 1000 V ±20V 1020 pF @ 25 V - - TO-220-3 - 125W (Tc) -55°C ~ 150°C (TJ)
IXTA1R6N100D2

IXTA1R6N100D2

MOSFET N-CH 1000V 1.6A TO263

Littelfuse Inc.

8,186 -
IXTA1R6N100D2

数据表

Depletion TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel, Depletion Mode MOSFET (Metal Oxide) 1.6A (Tc) 10V 10Ohm @ 800mA, 0V Surface Mount - 27 nC @ 5 V 1000 V ±20V 645 pF @ 25 V - - TO-263AA - 100W (Tc) -55°C ~ 150°C (TJ)
IXTY18P10T

IXTY18P10T

MOSFET P-CH 100V 18A TO252

Littelfuse Inc.

3,987 -
IXTY18P10T

数据表

TrenchP™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active P-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 120mOhm @ 9A, 10V Surface Mount 4.5V @ 250µA 39 nC @ 10 V 100 V ±15V 2100 pF @ 25 V - - TO-252AA - 83W (Tc) -55°C ~ 150°C (TJ)
IXTA62N15P

IXTA62N15P

MOSFET N-CH 150V 62A TO263

Littelfuse Inc.

5,645 -
IXTA62N15P

数据表

Polar TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 62A (Tc) 10V 40mOhm @ 31A, 10V Surface Mount 5.5V @ 250µA 70 nC @ 10 V 150 V ±20V 2250 pF @ 25 V - - TO-263AA - 350W (Tc) -55°C ~ 175°C (TJ)
IXTQ130N10T

IXTQ130N10T

MOSFET N-CH 100V 130A TO3P

Littelfuse Inc.

6,685 -
IXTQ130N10T

数据表

Trench TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 130A (Tc) 10V 9.1mOhm @ 25A, 10V Through Hole 4.5V @ 250µA 104 nC @ 10 V 100 V ±20V 5080 pF @ 25 V - - TO-3P - 360W (Tc) -55°C ~ 175°C (TJ)
IXTA1R6N100D2HV

IXTA1R6N100D2HV

MOSFET N-CH 1000V 1.6A TO263HV

Littelfuse Inc.

6,490 -
IXTA1R6N100D2HV

数据表

Depletion TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel, Depletion Mode MOSFET (Metal Oxide) 1.6A (Tj) 0V 10Ohm @ 800mA, 0V Surface Mount 4.5V @ 100µA 27 nC @ 5 V 1000 V ±20V 645 pF @ 10 V - - TO-263HV - 100W (Tc) -55°C ~ 150°C (TJ)
IXTA3N100D2HV

IXTA3N100D2HV

MOSFET N-CH 1000V 3A TO263HV

Littelfuse Inc.

7,375 -
IXTA3N100D2HV

数据表

Depletion TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel, Depletion Mode MOSFET (Metal Oxide) 3A (Tj) 0V 6Ohm @ 1.5A, 0V Surface Mount 4.5V @ 250µA 37.5 nC @ 5 V 1000 V ±20V 1020 pF @ 25 V - - TO-263HV - 125W (Tc) -55°C ~ 150°C (TJ)
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